学科分类
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1 个结果
  • 简介:ThephysicalandelectricalpropertiesofBF2+implantedpolysiliconfilmssubjectedtorapidthermalannealing(RTA)arepresented.ItisfoundthattheoutdiffusionofFanditssegregationatpolysilicon/siliconoxideinterfaceduringRTAarethemajorcausesofFanomalousmigration.FluorinebubbleswereobservedinBF2+implantedsamplesatdosesof1×1015and5×1015cm-2afterRTA.

  • 标签: Ion IMPLANTATION Rapid thermal ANNEALING FLUORINE