FLUORINE BEHAVIOR IN BF2+ IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING

(整期优先)网络出版时间:1990-02-12
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ThephysicalandelectricalpropertiesofBF2+implantedpolysiliconfilmssubjectedtorapidthermalannealing(RTA)arepresented.ItisfoundthattheoutdiffusionofFanditssegregationatpolysilicon/siliconoxideinterfaceduringRTAarethemajorcausesofFanomalousmigration.FluorinebubbleswereobservedinBF2+implantedsamplesatdosesof1×1015and5×1015cm-2afterRTA.