简介:Withthedevelopmentofcommunicationsystems,computernetworks,andotherinformationandcommunicationtechnology(ICT)infrastructures,challengesincommunicationsandefficientcommunicationsforgreentechnologiesarerisinginrecentyears.Inordertoreducetheenvironmentalproblems
简介:Theoperationprincipleofanarrayedwaveguidegrating(AWG)multiplexerisintroducedandthe4×4AWGwithfollowingdesignparametersisdiscussedindetail,suchasthechoiceofwavelength,theneighboringarrayedwaveguidedistanceΔL,thechannelfrequencyintervalΔf,andthefreespectralrange.Thestructureof4×4AWGisdesignedandtheresultofstimulatedtestisalsogiven.Analysisshowsthatthe4×4AWGischaracterizedbyawidedynamicrange,lowcrosstalk,betterspectrumproperties,andacompactstructure.
简介:Duetolowparametersensitivityforbalancedrealizations,balancedstructurebecomesagoodcandidateforanstatespaceadaptiveinfiniteimpluseresponse(MR)filter.Here,usingcoefficientsofthetransferfunctionastheadaptivefilteringparameters,abalancedadaptiveIIRfilteringalgorithmisproposedforoutput-errorminimization.ThealgorithmintheinternallybalancedrealizationguaranteesthattheadaptiveIIRfilteralwaysminimizestheratioofmaximum-to-minimumeigenvalueoftheGrammianmatricesattheeachiteration.Simulationresultsareprovidedtocorroboratetheproposedalgorithm.
简介:TheanalysisofsolarcellperformancehasbeendonebysimulatingtheexternalI-Vcharacteristicsofn^+/p/p^+singlecrystalsiliconsolarcellunderhighlightintensityand1.5airmass(AM).Thismethodallowsthemaximizationofsolarcellefficiency.Tofabricatelow-costn^+/p/p^+singlecrystalsiliconsolarcells,solidsourceofdopedphosphorousandboronwasused.
简介:UsingdoublecrystalX-raysdiffraction(DCXRD)andatomicforcemicroscopy(AFM),theresultsofGexSi1-xgrownUHV/CVDfromSi2H6andSiH4areanalyzedandcompared.Adsorbatescanmigratetotheenergy-favoringpositionduetotheslowgrowthratefromSiH4.Inthiscase,aSibufferthatisolatestheeffectofsubstrateonepilayercouldnotbegrown,whichresultsinapitpenetratingintoepilayerandbuffer.TheFWHMis0.055°inDCXRDfromSiH4.Thepresenceofdiffractionfringesisanindicationofanexcellentcrystallinequality,TheroughnessofthesurfaceisimprovedifgrownbySi2H6:however,thecrystalqualityoftheGex2Si1-xmaterialbecameworsethanthatfromSiH4duetomuchlargergrowthratefromSi2H6.ThecontentofGeisobtainedfromDCXRD,whichindicatesthegrowthratefromSi2H6islargest,thenGeH4andthatfromSiH4isleast.