简介：Basedoncurrentresearchonapplicationsofchaoticneuronnetworkforinformationprocessing,thestabilityandconvergenceofchaoticneuronnetworkareprovedfromtheviewpointofenergyfunction.Moreover,anewauto-associativematrixisdevisedforartificialneuralnetworkcomposedofchaoticneurons,thus,animprovedchaoticneuronnetworkforassociativememoryisbuiltup.Finally,theassociativerecallingprocessofthenetworkisanalyzedindetailandexplanationsofimprovementaregiven.

简介：Efficiencyandlinearityofthemicrowavepoweramplifierarecriticalelementsformobilecommunicationsystems.Amemorypolynomialbasebandpredistorterbasedonanindirectlearningarchitectureispresentedforimprovingthelinearityofanenvelopetracing(ET)amplifierwithapplicationtoawirelesstransmitter.Todealwithlargepeak-to-averageratio(PAR)problem,aclippingprocedurefortheinputsignalisemployed.Thenthesystemperformanceisverifiedbysimulationresults.Forasinglecarrierwidebandcodedivisionmultipleaccess(WCDMA)signalof16-quadratureamplitudemodulation(16-QAM),about2%improvementoftheerrorvectormagnitude(EVM)isachievedatanaverageoutputpowerof45.5dBmandgainof10.6dB,withadjacentchannelleakageratio(ACLR)of-64.55dBcatoffsetfrequencyof5MHz.Moreover,athree-carrierWCDMAsignalandathird-generation(3G)longtermevolution(LTE)signalareusedastestsignalstodemonstratetheperformanceoftheproposedlinearizationschemeunderdifferentbandwidthsignals.

简介：Inthispaper,conditionsfortheexistenceofequilibriumpointsandglobalstabilityareemphaticallydiscussedforBidirectionalAssociativeMemory(BAM)modelswithaxonalsignaltransmissiondelays,andthediscussedmethodsaremoregeneral.Thecorrectnessofobtainedconclusionsisverifiedbyuseofsomeexamples.TheobtainedresultshaveprimarysignificanceinthedesignandapplicationofBAM.

简介：Lowpowerconsumptionisamajorissueinnowadayselectronicssystems.ThistrendispushedbythedevelopmentofdatacenterrelatedtocloudservicesandsoontotheInternetofThings(IoT)deployment.Memoriesareoneofthemajorcontributorstopowerconsumption.However,thedevelopmentofemergingmemorytechnologiespavesthewaytolow-powerdesign,throughthepartialreplacementofthedynamicrandomaccessmemory(DRAM)withthenon-volatilestand-alonememoryinserversorwiththeembeddedordistributedemergingnon-volatilememoryinIoTobjects.Inthelattercase,non-volatileflip-flops(NVFFs)seemapromisingcandidatetoreplacetheretentionlatch.Indeed,IoTobjectspresentlongsleeptimeandNVFFsoffertosavedatainregisterswithzeropowerwhentheapplicationisidle.ThispapergivesanoverviewofNVFFarchitectureflavorsforvariousemergingmemorytechnologies.

简介：SharedMemory(SM)switchesarewidelyusedforitshighthroughput,lowdelayandefficientuseofmemory.ThispapercomparestheperformanceoftwoprominentswitchingschemesofSMpacketswitches:Cell-BasedSwitching(CBS)andPacket-BasedSwitching(PBS).Theoreticalanalysisiscarriedouttodrawqualitativeconclusiononthememoryrequirement,throughputandpacketdelayofthetwoschemes.Furthermore,simulationsarecarriedouttogetquantitativeresultsoftheperformancecomparisonundervarioussystemload,trafficpatterns,andmemorysizes.SimulationresultsshowthatPBShastheadvantageofshortertimedelaywhileCBShaslowermemoryrequirementandoutperformsinthroughputwhenthememorysizeislimited.Thecomparisoncanbeusedfortradeoffbetweenperformanceandcomplexityinswitchdesign.

简介：Wearabledevicesbecomepopularbecausetheycanhelppeopleobservehealthcondition.Thebatterylifeisthecriticalproblemforwearabledevices.Thenon-volatilememory(NVM)attractsattentioninrecentyearsbecauseofitsfastreadingandwritingspeed,highdensity,persistence,andespeciallylowidlepower.Withitslowidlepowerconsumption,NVMcanbeappliedinwearabledevicestoprolongthebatterylifetimesuchassmartbracelet.However,NVMhashigherwritepowerconsumptionthandynamicrandomaccessmemory(DRAM).Inthispaper,weassumetousehybridrandomaccessmemory(RAM)andNVMarchitectureforthesmartbraceletsystem.Thispaperpresentsadatamanagementalgorithmnamedbraceletpower-awaredatamanagement(BPADM)basedonthearchitecture.TheBPADMcanestimatethepowerconsumptionaccordingtothememoryaccess,suchassamplingrateofdata,andthendeterminethedatashouldbestoredinNVMorDRAMinordertosatisfylowpower.TheexperimentalresultsshowBPADMcanreducepowerconsumptioneffectivelyforbraceletinnormalandsleepingmodes.

简介：UnipolarresistiveswitchingbehaviorsoftheZnOandAl2O3/ZnOfilmsfabricatedonflexiblesubstratesbypulselaserdepositionwerestudiedinthispaper.Thefilmsweredepositedatroomtemperaturewithoutpost-annealingtreatmentduringtheprocess.XraydiffractionresultsindicatedthatZnOfilmhasadominantpeakat(002).ScanningelectronmicroscopyobservationshowedacolumnargrainstructureoftheZnOfilmtothesubstrate.ThebilayerdeviceofAl2O3/ZnOfilmshadstableresistiveswitchingbehaviorswithagoodenduranceperformanceofmorethan200cycles,highresistiveswitchingratioofover103atareadvoltageof0.1V,whichisbetterthanthatofthesingleoxidelayerdeviceofZnOfilm.Apossibleresistiveswitchingfilamentarymodewasdemonstratedinthispaper.TheconductionmechanismsofhighandlowresistancestatescanbeexplainedbyspacechargelimitedconductionandOhmic’sbehaviors.Theenduranceofthebilayer(BL)devicewasnotdegradeduponbendingcycles,whichindicatesthepotentialoftheflexibleresistiveswitchingrandomaccessmemoryapplications.

简介：ThestainlessFe-Mn-Sishapememoryalloy(SMA)coatingwaspreparedonthesurfaceofAISI304stainlesssteel.Theprincipalresidualstressmeasuredbythemechanicalhole-drillingmethodindicatesthattheFe-Mn-SiSMAcladdingspecimenpossessesalowerresidualstresscomparedwiththe304stainlesssteelcladdingspecimen.Themeanstressvaluesoftheformerandthelatteron10-mm-thicksubstrateare4.751MPaand7.399MPa,respectively.What’smore,theirdeformationvalueson2-mm-thicksubstrateareabout0°and15°,respectively.Meanwhile,thevariationtrendandthevalueoftheresidualstresssimulatedbytheANSYSfiniteelementsoftwareconsistwithexperimentalresults.TheX-raydiffraction(XRD)patternshowsε-martensiteexistsinFe-Mn-SiSMAcoating,whichverifiesthemechanismoflowresidualstress.That’stheγ→εmartensitephasetransformation,whichrelaxestheresidualstressofthespecimenandreducesitsdeformationinthelasercladdingprocessing.