简介:Inthiswork,weinvestigatethemethodstoimprovetheperformanceofthesweptsourceat1.0μmbasedonapolygonscanner,includingin-cavityparametersandboosterstructuresoutofthecavity.Thethreein-cavityparametersarethecavitylength,therotatingspeedofthepolygonscanner,andthein-cavityenergy.Withthedecreaseofcavitylength,thespectrumbandwidthbecomeswiderandthedutycyclebecomeshigher.Withtheincreaseoftherotatingspeedofthepolygon,thespectrumbandwidthbecomesnarrower,andthedutycyclebecomeslowerbuttherepetitionratebecomeshigher.Withmoreenergyin-cavity,thespectrumbandwidthbecomeswiderandthedutycyclebecomeshigher.Theboosterstructuresincludethebufferedstructure,secondaryamplifier,anddual-semiconductoropticalamplifierconfiguration,whichareusedtoincreasethesweepfrequencyto86kHz,theoutputpowerto18mW,andthetuningbandwidthto131nm,respectively.
简介:利用TCAD仿真技术,研究了电离总剂量辐射陷阱电荷对0.18μmN沟道MOSFET转移特性的影响.构建了0.18μmN沟道MOSFET的三维仿真结构,获得了在电离总剂量(totalionizingdose,TID)效应影响下,负栅压偏置时器件中电流密度的分布情况.分析了器件浅槽隔离层(shallowtrenchisolation,STI)中氧化物陷阱电荷和界面态陷阱电荷对器件泄漏电流的影响.仿真计算了N-MOSFET的转移特性,仿真结果与辐照试验结果受辐照影响的趋势基本一致,为深亚微米MOS器件的总剂量辐射效应的损伤机制提供了一种分析手段.
简介:Atheoreticaldesignispresentedfora1×Mwavelength-selectiveswitch(WSS)thatroutesanyoneofNincomingwavelengthsignalstoanyoneofMoutputports.Thisplanaron-chipdevicecomprisesofa1×Ndemultiplexer,agroupofNswitching'trees'actuatedbyelectro-opticalorthermo-opticalmeans,andanM-foldsetofN×1multiplexers.Treesutilize1×2switches.TheWSSinsertionlossisproportionalto(log2(M+N+1))Alongwithcrosstalkfromtrees,crosstalkispresentateachcross-illuminatedwaveguideintersectionwithintheWSS,andthereareatmostN-1suchcrossingsperpath.TheselossandcrosstalkpropertieswilllikelyplaceapracticallimitofN=M=16upontheWSSsize.Byconstrainingthe1×2switchingenergyto1fJ∕bit,wefindthatresonant,narrowband1×2switchesarerequired.The1×2devicesproposedherearenanobeamMach–Zehndersandasymmetriccontra-directionalcouplerswithgratingassistance.
简介:Two-dimensional(2D)graphitecarbonnitride(g-C3N4)nanosheetshavebeensuccessfullyusedasasaturableabsorber(SA)inapassivelyQ-switchedNd:LLFlaserat1.3μmforthefirsttime,tothebestofourknowledge.Underanincidentpumppowerof9.97W,theshortestpulsedurationof275nswasacquiredwithoutputpowerof0.96Wandpulserepetitionrateof154kHz,resultinginapulseenergyof6.2μJ.Inaddition,thesaturableabsorptionbehaviorsofzero-dimensional12nmg-C3N4nanoparticles(g-C3N4-NPs)andthree-dimensionalorderedmesoporousg-C3N4(mpg-C3N4)werealsoobserved,althoughtheirmorphologyandstructurewerequitedifferentfrom2Dg-C3N4.Theexperimentalresultsintroducethepotentialapplicationofg-C3N4nanomaterialsasSAsinQ-switchedlasers.
简介:Wereportonbroadlywavelength-tunablepassivemode-lockingwithhighpoweroperatingatthe2μmwaterabsorptionbandinaTm:CYAcrystallaser.Withasimplequartzplate,stablemode-lockingwavelengthscanbetunedfrom1874to1973nm,withatunablewavelengthrangeupto~100nmandmaximumoutputpowerupto1.35W.Thebandwidthisnarrowas~6GHz,correspondingtoahighcoherence.Toourknowledge,thisisthefirstdemonstrationofwavelength-tunablemode-lockingwithwatt-levelinthe2μmwaterabsorptionband.Thehightemporalcoherentlasercanbefurtherappliedinspectroscopy,theefficientexcitationofmolecules,sensing,andquantumoptics.
简介:Byusingtheultrasound-assistedliquidphaseexfoliationmethod,Bi2Te3nanosheetsaresynthesizedanddepositedontoaquartzplatetoformakindofsaturableabsorber(SA),inwhichnonlinearabsorptionpropertiesaround2μmareanalyzedwithahome-mademode-lockedlaser.Withtheas-preparedBi2Te3SAemployed,astablepassivelyQ-switchedall-solid-state2μmlaserissuccessfullyrealized.Q-switchedpulseswithamaximumaverageoutputpowerof2.03Waregeneratedunderanoutputcouplingof5%,correspondingtothemaximumsingle-pulseenergyof18.4μJandpeakpowerof23W.Thedeliveredshortestpulsedurationandmaximumrepetitionrateare620nsand118kHzunderanoutputcouplingof2%,respectively.ItisthefirstpresentationofsuchBi2Te3SAemployedinasolid-stateQ-switchedcrystallinelaserat2μm,tothebestofourknowledge.Incomparisonwithother2Dmaterialssuitableforpulsed2μmlasers,thesaturableabsorptionperformanceofBi2Te3SAisprovedtobepromisingingeneratinghighpowerandhigh-repetition-rate2μmlaserpulses.
简介:Wehavedemonstratedahigh-average-power,high-repetition-rateopticalterahertz(THz)sourcebasedondifferencefrequencygeneration(DFG)intheGaSecrystalbyusinganear-degenerate2μmintracavityKTPopticalparametricoscillatorasthepumpsource.Thepowerofthe2μmdual-wavelengthlaserwasupto12.33Wwithcontinuoustuningrangesof1988.0–2196.2nm/2278.4–2065.6nmfortwowaves.DifferentGaSecystallengthshavebeenexperimentallyinvestigatedfortheDFGTHzsourceinordertooptimizetheTHzoutputpower,whichwasingoodagreementwiththetheoreticalanalysis.Basedonan8mmlongGaSecrystal,theTHzwavewascontinuouslytunedfrom0.21to3THz.ThemaximumTHzaveragepowerof1.66μWwasobtainedatrepetitionrateof10kHzunder1.48THz.Thesinglepulseenergyamountedto166pJandtheconversionefficiencyfrom2μmlasertoTHzoutputwas1.68×10-6.Thesignal-to-noiseratioofthedetectedTHzvoltagewas23dB.TheacceptanceangleofDFGintheGaSecrystalwasmeasuredtobe0.16°.
简介:ZnOfilmscontainingErandGenanocrystals(nc-Ge)weresynthesizedandtheirphotoluminescence(PL)propertieswerestudied.Visibleandnear-infraredPLintensitiesarefoundtobegreatlyincreasedinnc-Ge-containingfilm.Er-related1.54μmemissionhasbeeninvestigatedunderseveralexcitationconditionsupondifferentkindsofGe,ErcodopedZnOthinfilms.1.54μmPLenhancementaccompaniedbytheappearanceofnc-Geimpliesasignificantcorrelationbetweennc-GeandPLemissionofEr3+.Theincreasedintensityof1.54μminGe:Er:ZnOfilmisconsideredtocomefromthejointeffectofthelocalpotentialdistortionaroundEr3+andthepossibleenergytransferfromnc-GetoEr3+.
简介:基于地下强爆炸诱发出的具有独特性质的非线弹性摆型波的试验和理论证据,系统开展块系岩体中的非线性摆型波特性在核试验核查中的应用研究.利用自主研发的试验仪器,成功模拟出块系岩体介质中低频、低速的变形波——摆型波,并通过试验揭示了冲击扰动作用下非线性摆型波产生的力学机理与传播规律,同时还研究了由摆型波传播诱发岩块的不可逆位移、动力滑移失稳的条件.通过构造冲击扰动下岩块振动的等效振动能量表达式及变分原理,提出了摆型波传播的特征能量因子,利用特征能量因子临界阈值界定了地下爆炸不可逆位移范围.结合卫星侦察等爆炸后效应监测手段,可对地下核爆炸的当量和埋深进行有效评估,为地下大当量核爆炸试验核查提供一种新的技术手段.