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  • 简介:Theaimofthisexpositionistoprovideadetaileddescriptionoftheuseofcombinatorialalgebrainquantumfieldtheoryintheplanarsetting.ParticularemphasisisplacedontherelationsbetweendifferenttypesofplanarGreen'sfunctions.TheprimaryobjectisaHopfalgebrathatisnaturallydefinedonvariablesrepresentingnon-commutingsources,andwhosecoproductsplitsintotwohalf-coproducts.Thelattergiverisetothenotionofanunshuffiebialgebra.ThissettingallowsadescriptionoftherelationbetweenfullandconnectedplanarGreen'sfunctionstobegivenbysolvingasimplelinearfixedpointequation.Wealsoincludeabriefoutlineoftheconsequencesofourapproachintheframeworkofordinaryquantumfieldtheory.

  • 标签: PLANAR field theory Green's functions free
  • 简介:Compositesofcarbonaerogelandgraphiteoxide(GO)weresynthesizedusingaself-assemblymethodbasedondispersiveforces.Theirsurfacewasmodifiedbytreatmentinhydrogensulfideat650and800℃.Thesamplesobtainedwerecharacterizedbyadsorptionofnitrogen,TA-MS,XPS,potentiometrictitration,andHRTEMandtestedascatalystsforoxygenreductionreactions(ORR)inanalkalinemedium.Thesynergisticeffectofthecomposite(electricalconductivity,porosityandsurfacechemistry)leadstoagoodORRcatalyticactivity.Theonsetpotentialforthecompositeofcarbonaerogelheatedat800℃isshiftedtoamorepositivevalueandthenumberofelectrontransferwas2e-atthepotential0.68VversusRHEanditincreasedto4e-withanincreaseinthenegativevaluesofthepotential.Anexcellenttolerancetomethanolcrossoverwasalsorecorded.

  • 标签: 石墨复合材料 还原催化剂 碳气凝胶 氧化 氧还原反应 掺杂
  • 简介:Cu2ZnSnS4(CZTS)基于太阳能电池被microelectronic和photonic结构(AMPS-1D)的一个维的太阳能电池模拟软件分析数字地模仿。在模拟使用的设备结构是Al/ZnO:Al/nZn(O,S)/pCZTS/Mo。工作是在ZnO1xSx缓冲区层,它将产出更高的变换效率。由改变S/(S+O)比率x,在CZTS/Zn的传导乐队偏移量(CBO)(O,S)如果比率的完整的范围被考虑,接口能从0.23eV到1.06eV。当时,0.23eV的最佳的CBO能被完成ZnO1xSx缓冲区有S/(S+O)0.6的比率。太阳能电池效率首先与增加硫内容增加然后为x突然地减少>0.6,它由我们的建议的最佳的硫内容x=到达17.55%的最高的价值0.6。我们的结果在处理ZnO1x为高效率CZTS的Sx缓冲区层免职太阳能电池。

  • 标签: Zn(O S) CZTS太阳能电池 性能 放大器缓冲层
  • 简介:Thispublisher’snotereportscorrectionstothreeofthefiguresin[Photon.Res.4,49(2016)].

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  • 简介:TheZ-backlighterlaserfacilityprimarilyconsistsoftwohighenergy,high-powerlasersystems.Z-Beamletlaser(ZBL)(Ramboetal.,Appl.Opt.44,2421(2005))isamulti-kJ-class,nanosecondlaseroperatingat1054nmwhichisfrequencydoubledto527nminordertoprovidex-raybacklightingofhighenergydensityeventsontheZ-machine.Z-Petawatt(ZPW)(Schwarzetal.,J.Phys.:Conf.Ser.112,032020(2008))isapetawatt-classsystemoperatingat1054nmdeliveringupto500Jin500fsforbacklightingandvariousshort-pulselaserexperiments(seealsoFigure10forafacilityoverview).Withthedevelopmentofthemagnetizedlinerinertialfusion(MagLIF)conceptontheZ-machine,theprimarybacklightingmissionsofZBLandZPWhavebeenadjustedaccordingly.Asaresult,wehavefocusedourrecenteffortsonincreasingtheoutputenergyofZBLfrom2to4kJat527nmbymodifyingthefiberfrontendtonowincludeextrabandwidth(forstimulatedBrillouinscatteringsuppression).TheMagLIFconceptrequiresawell-defined/behavedbeamforinteractionwiththepressurizedfuel.HencewehavemadegreateffortstoimplementanadaptiveopticssystemonZBLandhaveexploredtheuseofphaseplates.WearealsoexploringconceptstouseZPWasabacklighterforZBLdrivenMagLIFexperiments.Alternatively,ZPWcouldbeusedasanadditionalfusionfuelpre-heaterorasatemporallyflexiblehighenergypre-pulse.AlloftheseconceptsrequiretheabilitytooperatetheZPWinananosecondlong-pulsemode,inwhichthebeamcanco-propagatewithZBL.Someoftheproposedmodificationsarecompleteandmostofthemarewellontheirway.

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  • 简介:AnewlayeredCu-basedoxychalcogenideBa3Fe2O5Cu2S2hasbeensynthesizedanditsmagneticandelectronicpropertieswererevealed.Ba3Fe2O5Cu2S2isbuiltupbyalternativelystacking[Cu2S2]2-layersandironperovskiteoxide[(FeO2)(BaO)(FeO2)]2-layersalongthecaxisthatareseparatedbybariumionswithFe3+fivefoldcoordinatedbyasquare-pyramidalarrangementofoxygen.Fromthebondvalencearguments,weinferredthatinlayeredCuCh-based(Ch=S,Se,Te)compoundsthe+3cationinperovskiteoxidesheetprefersasquarepyramidalsite,whilethelowervalencecationprefersthesquareplanarsites.Thestudiesonsusceptibility,transport,andopticalreflectivityindicatethatBa3Fe2O5Cu2S2isanantiferromagneticsemiconductorwithaNe′eltemperatureof121Kandanopticalbandgapof1.03eV.Themeasurementofheatcapacityfrom10Ktoroomtemperatureshowsnoanomalyat121K.TheDebyetemperatureisdeterminedtobe113K.TheoreticalcalculationsindicatethattheconductionbandminimumispredominantlycontributedbyO2pand3dstatesofFeionsthatantiferromagneticallyarrangedinFeO2layers.TheFe3dstatesarelocatedatlowerenergyandresultinanarrowbandgapincomparisonwiththatoftheisostructuralSr3Sc2O5Cu2S2.

  • 标签: 钙钛矿型氧化物 铁磁半导体 光学带隙 德拜温度 电子性质 阳离子