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简介：TheexitwavefunctionincludingzeroandhighorderLauezoneshasbeensimulatedbybothmulti-slicemethodandelectrondynamicdiffractionanalyticalexpression.Coincidenceofthesimulationsbythesetwomethodswasachieved.ThecalculatedresultsshowedthattheexitwavefunctionhighlydominatedbyzeroorderLauezone,whilehighorderonesmodifytheexitwavefunctiontosomeextentdependingonthesituation.HighorderLauezoneeffectsbecomeimportantforthefollowingcases:sampleconsistsoflightelements,thethicknessisverythin,latticeplanarspacingperpendiculartothedirectionoftheincidentbeamislarge,andtheelectronbeamhaslongwavelength.InthesecasestheexitwavefunctionshouldbecorrectedbyaddinghighorderLauezoneeffects.TheanalyticalexpressioniseffectiveandconvenientfordealingwithhighorderLauezoneeffects.

简介：

简介：Intrinsiccarrierconcentration（ni）isoneofthemostimportantphysicalparametersforunderstandingthephysicsofstrainedSiandSi1-xGexmaterialsaswellasforevaluatingtheelectricalpropertiesofSi-basedstraineddevices.Uptonow,thereportonquantitativeresultsofintrinsiccarrierconcentrationinstrainedSiandSi1-xGexmaterialshasbeenstilllacking.Inthispaper,byanalyzingthebandstructureofstrainedSiandSi1-xGexmaterials,boththeeffectivedensitiesofthestatenearthetopofvalencebandandthebottomofconductionband（NcandNv）at218,330and393KandtheintrinsiccarrierconcentrationrelatedtoGefraction（x）at300KweresystematicallystudiedwithintheframeworkofKPtheoryandsemiconductorphysics.ItisfoundthattheintrinsiccarrierconcentrationinstrainedSi（001）andSi1-xGex（001）and（101）materialsat300KincreasessignificantlywithincreasingGefraction（x）,whichprovidesvaluablereferencestounderstandtheSibasedstraineddevicephysicsanddesign.