简介:Nitridatedβ-Ga_2O_3(100)substratewasinvestigatedasthesubstrateforGaNepitaxialgrowth.Theeffectsofnitridationtemperatureandsurfaceroughnessofβ-Ga_2O_3wafersontheformationofGaNwerestudied.Itwasfoundthatthemostoptimizednitridationtemperaturewas900°C,andhexagonalGaNwithpreferredorientationwasproducedonthewell-polishedwafer.Thenitridationmechanismwasalsodiscussed.
简介:FourkindsofY2O3stabilizedZrO2(YSZ)thinfilmswithdifferentY2O3contents(from0to12mol%)aredepositedonBK7glasssubstratesbyelectron-beamevaporationmethod.TheeffectsofdifferentY2O3dopantcontentsonresidualstress,structure,andopticalpropertiesofZrO2thinfilmsareinvestigated.TheresultsshowthatresidualstressinYSZthinfilmsvariesfromtensiletocompressivewiththeincreaseofY2O3molarcontent.TheadditionofY2O3isbeneficialtothecrystallizationofYSZthinfilmandtransformationfromamorphoustohightemperaturephase,andtherefractiveindexdecreaseswiththeincreaseofY2O3molarcontent.Moreover,thevariationsofresidualstressandtheshiftsofrefractiveindexcorrespondtotheevolutionofstructuresinducedbytheadditionofY2O3.
简介:Wereportonthecontinuous-wave(CW)andpassiveQ-switchingperformanceofaminiatureYb:Y3Ga5O12crystallaserendpumpedbya935-nmdiodelaser.AmaximumCWoutputpowerof12.03Wisproducedwithanoptical-to-opticalefficiencyof54.4%,whiletheslopeefficiencyis63%.InthepassivelyQ-switchedoperationachievedwithaCr4+:YAGsaturableabsorber,anaverageoutputpowerof2.12Wat1025.2nmisgeneratedwithaslopeefficiencyof46%atapulserepetitionrateof5.0kHz.Thepulse’senergy,duration,andpeakpowerare424μJ,2.3ns,and184.3kW,respectively.