简介：Inthispaper,high-speedsurface-illuminatedGe-on-Sipinphotodiodeswithimprovedeffidencyaredemon-strated.Withphoton-trappingmicroholefeatures,theexternalquantumefficiency（EQE）oftheGe-on-Sipindiodeis〉80%at1300nmand73%at1550nmwithanintrinsicGelayerofonly2μmthickness,showingmuchimprovementcomparedtoonewithoutmicroholes.MorethanthreefoldEQEimprovementisalsoob-servedatlongerwavelengthsbeyond1550nm.Theseresultsmakethemicrohole-enabledGe-on-SiphotodiodespromisingtocoverboththeexistingCandLbands,aswellasanewdatatransmissionwindow（1620-1700nm）,whichcanbeusedtoenhancethecapacityofconventionalstandardsingle-modefibercables.Thesephotodiodeshavepotentialformanyapplications,suchasinter-/intra-datacenters,passiveopticalnetworks,metroandlong-hauldensewavelengthdivisionmultiplexingsystems,eye-safelidarsystems,andquantumcommunications.TheCMOSandBiCMOSmonolithicintegrationcompatibilityofthisworkisalsoattractiveforGeCMOS,near-infraredsensing,andcommunicationintegration.
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