简介:Ti-dopedW03filmswerepreparedbythemid-frequencydual-targetmagnetronsputteringmethod.ThestructureandelectrochromicpropertiesoftheTi-dopedWO3filmswereanalysedbyX-Raydiffraction(XRD),Ramanspectroscopy,spectrophotometer,cyclicchronoam-perometryandatomicforcemicroscopy(AFM).Theresultsindicatethatthecrystallinitydecreaseafterthedopingoftitanium,thechannelsforioninjectionandextractionincrease,therespondingspeedwith5.1%titaniumdopedbecomesfaster,anditscirclelifeincreasesmorethanfourtimescomparedwiththeundopedWOafilm.Inthecolouredstate,theW-O-Wbondsdecrease,buttheW=Obondsincrease.SincetheW-O-WbondsbreakdownforLi~+ions'injectionandmoreW=Obondsform,itismoreconvenienttoinjectLi~+ionsintotheTi-dopedfilmthanundopedfilmbecausemoreW-O-Wbondsbreakdowninthecolouredstate.
简介:Synchrontronradiationx-rayreflectivitymeasurementisusedtostudytheconcentrationprofileofaδ-dopedErlayerinSiepitaxialfilmgrownbymolecular-beamepitaxy.Theoscillationofthereflectivityamplitudeasafunctionofreflectionangleisobservedintheexperiment.Bydoingatheoreticalsimulation.theconcentrationprofileofEratomscouldbederied.Itisshownthattheoriginallygrownδ-dopedErlayerchangesintoanexpionentiallydecayedfunctionduetotheErsegregation.Thetemperaturedependenceofthe1/edecaylengthindicatesthatthesegregationisakineticallylimitedprocess.Theactivationenergyisdeterminedtobe0.044±0.005eV.
简介:ZnOnanowiresdepositedonSisubstrateswerepreparedbythermalevaporationofamixtureofZnOandcarbonpowder.Agionswithanenergyof63keVandadoseof5×1015ions/cm-2wereimplantedintotheas-preparedZnOnanowires.Afterionimplantation,theAg-implantedZnOnanowireswereannealedinairatdifferenttemperaturesfrom600℃to1000℃.Effectsofionimplantationandthermalannealingonthestructuralandphotoluminescent(PL)propertiesoftheZnOnanowireswereinvestigatedbytransmissionelectronmicroscopy(TEM),selectedareaenergydispersiveX-rayspectroscopy(SAEDX),X-raydiffraction(XRD),andfluorescencespectrophotometry.TEM,HR-TEM,andSAEDXanalysesdemonstratedthatefficientdopingofAgwasachievedbyionimplantationandthesubsequentannealingprocess.XRDpatternsrevealedthatthehexagonalwurtzitestructureofZnOnanowireswasmaintainedafterionimplantation.PhotoluminescentemissionsofZnOnanowiresweredecreasedsignificantlybyAgimplantationbutcouldberecoveredbythermalannealing.ThemechanismoftheinfluenceofionimplantationandannealingonthePLintensitywasassessed.
简介:Inthiswork,thelaserinducedplasmaplumecharacteristicsandsurfacemorphologyofPt-andAg-iondepositedsiliconwerestudied.Thedepositedsiliconwasexposedtocumulativelaserpulses.Theplasmaplumeimagesproducedbyeachlasershotwerecapturedthroughacomputercontrolledimagecapturingsystemandanalyzedwithimage-Jsoftware.Theintegratedopticalemissionintensityofbothsamplesshowedanincreasingtrendwithincreasingpulses.Ag-iondepositedsiliconshowedhigheropticalemissionintensityascomparedtoPt-iondepositedsilicon,suggestingthatmoredamageoccurredtothesiliconbyAgions,whichwasconfirmedbySRIM/TRIMsimulations.Thesurfacemorphologiesofbothsampleswereexaminedbyopticalmicroscopeshowingthermal,exfoliationalandhydrodynamicalsputteringprocessesalongwiththere-depositionofthematerial,debrisandheataffectedzones’formation.ThecraterofPt-iondepositedsiliconwasdeeperbuthadlesslateraldamagethanAgiondepositedsilicon.Thenovelresultsclearlyindicatedthattheiondepositedsiliconsurfaceproducedincubationcenters,whichledtomoreabsorptionofincidentlightresultingintoahigheremissionintensityfromtheplasmaplumeanddeepercraterformationascomparedtopuresilicon.Theapproachcanbeeffectivelyutilizedinthelaserinducedbreakdownspectroscopytechnique,whichendurespoorlimitsofdetection.