简介:GugeandItsGateGuardianeginningonthe29thdayofthe12thmonth,Lhasawasimmersedinhappines.TheTibetanswhohadbeenworkingforawholeye...
简介:Thispaperdealswithamethodologyforsinglegatelocationoptimizationforplasticinjectionmold.Theobjectiveofthegateoptimizationistominimizethewarpageofinjectionmoldedparts,becausewarpageisacrucialqualityissueformostinjectionmoldedpartswhileitisinfluencedgreatlybythegatelocation.Featurewarpageisdefinedastheratioofmaximumdisplacementonthefeaturesurfacetotheprojectedlengthofthefeaturesurfacetodescribepartwarpage.Theoptimizationiscombinedwiththenumericalsimulationtechnologytofindtheoptimalgatelocation,inwhichthesimulatedannealingalgorithmisusedtosearchfortheoptimum.Finally,anexampleisdiscussedinthepaperanditcanbeconcludedthattheproposedmethodiseffective.
简介:Gatematrixlayoutproblemplaysanimportantroleinintegratedcircuitdesign,butitsoptimizationisNP-hard.Inthispaper,typicalgatelayoutproblemisanalysedandadaptedtoneuralnetworkrepresentation,furthermorethesimulatedresultsaregiven.
简介:DepletionmodeHEMTwithrefractorymetalsilicideWSigatehasbeende-signedandfabricated.Epicated.Epitaxialmodulationdopingmaterialsweregrownbyahome-madeMBEsystem.Thegatelengthandwidthforlownoisedepletiondeviceswere1.2~1.5μmand2×160μmrespectively.Theelectronmobilityofthefabricateddevicesistypically6080cm^2/V·sat300Kand68000cm^2/V·sat77K.Thesheetelectronconcentrationnsis9×10^11cm^-2,Thesource-draincontactswithAuGeNi/Auwerefabricatedusingevaporatingandlift-offtechnique.tofurtherreducethecontactresistance,thewaferalloyedat520℃for3mininthehydrogen(H2)gas.SchottkygatewasformedusingWSi.Thetranseon-ductanceofthedepletionmodedeviceis110~130mS/mmatroomtemperature,Thede-vicescanbeappliedincommunicationsatelliteatmicrowavefreqencyof3.83GHzandradarreceiverat1.5GHz.Itsnoisefigureisabout2~3dB.
简介:Theturbulentflowdischargingunderasluicegateisonekindoftypicalflowswithcomplicatedboundariesinhydraulicandhydroelectricengineering,andthecharacteristicsofitsflowfieldandflowevolutionareimportantinengineeringhydraulics.Althoughthereweremanystudiesinthisregard,whichmainlyfocusonthedischargecapacity,thelocalscourandthemeanflowfield,someissuesremaintobefurtherinvestigated,forexample,thevariationofthemechanicalenergyduringthescouringprocess,andtheadjustmentoftheunsteadyturbulentflowafterthelocalscourwiththedownstreamsteadyuniformflow.Inthispaper,theturbulentflowbehindasluicegateisdividedintoarapidlyvariedflowregionandagraduallyvariedflowregion,andtheaboveproblemsareinvestigatedbytheoreticalanalysisandnumericalsimulation.Themainconclusionsareasfollows:(1)Inthedischargingprocessoftheturbulentflowunderasluicegate,theriverbedwouldbescouredcontinuouslyandthewater–airinterfaceisadjustedaccordingly,whichleadstoadecreaseofthemechanicalenergyofthetotalflowintherapidlyvariedflowregion,andthemechanicalenergylosswouldalsodecreasewiththeincreaseofthetime,yetthevariationoftheflowdischargeunderthesluicegateisverysmall.(2)Inthelinkbetweentherapidlyvariedflowandtheuniformflowdownstream,themeanwallshearstressandthecoefficientforthemechanicalenergylosswoulddecreaseinthelongitudinaldirection,thedecayoftheturbulentkineticenergynearthefreesurfaceismuchmoresignificantthanthatnearthebedinthelongitudinaldirection,andthemeanturbulentkineticenergyinthesectionwoulddecreaseinthelongitudinaldirectionandthedecreasingrateissmallerthanthatofthemeanwallshearstress.
简介:Thispaperpresentsamethodusingsimplephysicalvapourdepositiontoformhigh-qualityhafniumsiliconoxyni-tride(HfSiON)onultrathinSiO2bufferlayer.Thegatedielectricwith10A(1A=0.1nm)equivalentoxidethicknessisobtained.TheexperimentalresultsindicatethatthepreparedHfSiONgatedielectricexhibitsgoodphysicalandelectricalcharacteristics,includingverygoodthermalstabilityupto1000C,excellentinterfaceproperties,highdielectricconstant(k=14)andlowgate-leakagecurrent(Ig=1.9×103A/cm2@Vg=Vfb1VforEOTof10A).TaNmetalgateelectrodeisintegratedwiththeHfSiONgatedielectric.TheeffectiveworkfunctionofTaNonHfSiONis4.3eV,meetingtherequirementsofNMOSforthemetalgate.And,theimpactsofsputteringambientandannealingtemperatureontheelectricalpropertiesofHfSiONgatedielectricareinvestigated.
简介:ThegrowinginterestintheuseofGalliumArsenidssemiconductormaterialshaspresentedmanyopportunitiesfordeviceoperationalspeedimprovementsbuthasalsopresentedmanyproblemsforthedevicemaker,Anoveldeep-submicronx-raylithographyprocessforT-shapedgatepatternsusefulforhigh-electron-mobilitytransistors(HEMT)isintroducedinthiswork.InthefabricationofT-shapedgateatherrlayerresistsmethodisused.Thex-rayexposureexperimentswerefinishedbyBeijingSynchrotronRadiationFacility(BSRF)3B1Abeamline,andgoodresulthasbeenobtained.
简介:BasedonimprovedchargecontrolmodelandcombiningGSWvelocity-fieldequa-tion,aseriesofanalyticalsolutionsforthestaticcharacteristicsofHIGFETssuchasID-VD-VG,IDS-VG,GmandCGarederived.Theresultsofcalculationarecomparedwithexperimentaldatareportedinreferences,withintherangeofVG<2V,ID
简介:Trendsintoday’ssteelproductionshowincreasingdemandsforhighly-sophisticatedsteelgrades.Therefore,thesteelindustrywilleventuallyberequiredtoinstallbestperformingtechnologiestomeetgovernmentalspecificationsdesignedtosignificantlyreduceenvironmentalemissions.Sucheffortsaresupportedbyinnovativenewsolutionsintheentiresteelmakingprocess.Oneprocessthatwillneedtobeaddressedisthecleanlinessofthesteelintheliquidsteelphase,especiallyduringtheBOF-tappingprocess.Thenewconvertergate(CG)(Fig.1)bestsupportstheslidegatetappingtechnologyforconvertersintermsofcleansteel,productivity,yieldandavailability-atreducedcosts.TheCGgateintroducesauniquefeatureforconverterslidegates:Thebottomplatecanbeexchangedwhilethegateremainsmountedontheconverter.Thisnewfeatureallowsforanincreasedutilisationoftherefractorypartsandasignificantreductionofthedowntimeoftheconverter.This'designedefficiency'isachievedwitharefractorysetconsistingofthreeidenticalplates-twobottomplatesandonesliderplate-andanozzle.AnumberofotherimprovementssuchasautomaticcylindercouplingusingtheInterstopSNAPtechnologyandatwosteptensioningsystemhavealsobeenimplemented.ThenewsystemisdesignedtomeetminimalspacerequirementsandthereforewilladapttomostBOFshops.Toperformpreparation,serviceandmaintenanceworkthemodularCGgatecanbedismountedfromtheconverterandsimultaneouslyreplacedbyaready-to-useunit.Thedegreeofautomationfordismountingandmountingaswellasforoff-linepreparationhasbeenenhancedandreducesmanualefforts.Thispaperprovidesasolutiontotheobvioustrendtowardsefficientandcontrolledproductionofcleansteel,ingeneral,andespeciallyatBOFshops.Moreover,itspecificallydescribestheoperationalresultsofthisinnovativeBOFtappingequipmentatSalzgitterFlachstahlGmbH,Germany.
简介:一个新奇计划所有光并且门基于一个Fabry-Perot半导体,光放大器(FP-SOA)被建议,它的可行性被模拟验证。用这个计划,所有光并且门能与10dB的扑灭比率被认识到。扑灭比率上的脉搏间隔和脉搏宽度的影响也被调查。