简介：这篇论文以在结理论描述的外科的操作获得Hadamard门和CNOT门的系的图画。

简介：ＧｕｇｅａｎｄＩｔｓＧａｔｅＧｕａｒｄｉａｎｅｇｉｎｎｉｎｇｏｎｔｈｅ２９ｔｈｄａｙｏｆｔｈｅ１２ｔｈｍｏｎｔｈ，Ｌｈａｓａｗａｓｉｍｍｅｒｓｅｄｉｎｈａｐｐｉｎｅｓ．ＴｈｅＴｉｂｅｔａｎｓｗｈｏｈａｄｂｅｅｎｗｏｒｋｉｎｇｆｏｒａｗｈｏｌｅｙｅ...

简介：Thispaperdealswithamethodologyforsinglegatelocationoptimizationforplasticinjectionmold.Theobjectiveofthegateoptimizationistominimizethewarpageofinjectionmoldedparts,becausewarpageisacrucialqualityissueformostinjectionmoldedpartswhileitisinfluencedgreatlybythegatelocation.Featurewarpageisdefinedastheratioofmaximumdisplacementonthefeaturesurfacetotheprojectedlengthofthefeaturesurfacetodescribepartwarpage.Theoptimizationiscombinedwiththenumericalsimulationtechnologytofindtheoptimalgatelocation,inwhichthesimulatedannealingalgorithmisusedtosearchfortheoptimum.Finally,anexampleisdiscussedinthepaperanditcanbeconcludedthattheproposedmethodiseffective.

简介：Gatematrixlayoutproblemplaysanimportantroleinintegratedcircuitdesign,butitsoptimizationisNP-hard.Inthispaper,typicalgatelayoutproblemisanalysedandadaptedtoneuralnetworkrepresentation,furthermorethesimulatedresultsaregiven.

简介：DepletionmodeHEMTwithrefractorymetalsilicideWSigatehasbeende-signedandfabricated.Epicated.Epitaxialmodulationdopingmaterialsweregrownbyahome-madeMBEsystem.Thegatelengthandwidthforlownoisedepletiondeviceswere1.2～1.5μmand2×160μmrespectively.Theelectronmobilityofthefabricateddevicesistypically6080cm^2/V·sat300Kand68000cm^2/V·sat77K.Thesheetelectronconcentrationnsis9×10^11cm^-2，Thesource-draincontactswithAuGeNi/Auwerefabricatedusingevaporatingandlift-offtechnique.tofurtherreducethecontactresistance,thewaferalloyedat520℃for3mininthehydrogen(H2)gas.SchottkygatewasformedusingWSi.Thetranseon-ductanceofthedepletionmodedeviceis110～130mS/mmatroomtemperature,Thede-vicescanbeappliedincommunicationsatelliteatmicrowavefreqencyof3.83GHzandradarreceiverat1.5GHz.Itsnoisefigureisabout2～3dB.

简介：一条新奇测试途径为在可编程的门数组(FPGA)是的地里互连资源(红外)proposed.In测试途径，在FPGA的红外的SB(开关框)被利用了测试IRs.Furthermore，在FPGA的可配置的逻辑块(CLB)也被采用了提高开车能力和差错红外的位置能被监视红外决定联系SBs.As结果，红外能与最小的配置patterns.In最大地被扫描实验，内部地发达的FPGA测试

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简介：一只新奇侧面的双门通道领域效果晶体管(DG-TFET)被学习，它的性能被二维的设备模拟与代码ISE介绍。Theresult证明这只新通道晶体管允许在60mV/dec下面的更陡峭的次于最低限度的秋千，超级低供应电压(在V-DD<合用0.3V)并且rail-to-rail逻辑(在排水管来源电压V-DS=的重要在状态上电流50mV)为好攻击的技术，high-k/metal的可获得性的假设与相等的门氧化物厚度传输结束字符=叠0.24nm和工作工作差别4.5材料的eV。

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简介：Thispaperdescribesamaximumtimedifferencepipelinedarithmeticchip,the36-bitadderandsubtractorbasedon1.5μmCMOSgatearray.Thechipcanoperateat60MHz,andconsumeslessthan0.5Watt.Theresultsarealsostudied,andamoreprecisemodelofdelaytimedifferenceisproposed.

简介：Theturbulentflowdischargingunderasluicegateisonekindoftypicalflowswithcomplicatedboundariesinhydraulicandhydroelectricengineering,andthecharacteristicsofitsflowfieldandflowevolutionareimportantinengineeringhydraulics.Althoughthereweremanystudiesinthisregard,whichmainlyfocusonthedischargecapacity,thelocalscourandthemeanflowfield,someissuesremaintobefurtherinvestigated,forexample,thevariationofthemechanicalenergyduringthescouringprocess,andtheadjustmentoftheunsteadyturbulentflowafterthelocalscourwiththedownstreamsteadyuniformflow.Inthispaper,theturbulentflowbehindasluicegateisdividedintoarapidlyvariedflowregionandagraduallyvariedflowregion,andtheaboveproblemsareinvestigatedbytheoreticalanalysisandnumericalsimulation.Themainconclusionsareasfollows:(1)Inthedischargingprocessoftheturbulentflowunderasluicegate,theriverbedwouldbescouredcontinuouslyandthewater–airinterfaceisadjustedaccordingly,whichleadstoadecreaseofthemechanicalenergyofthetotalflowintherapidlyvariedflowregion,andthemechanicalenergylosswouldalsodecreasewiththeincreaseofthetime,yetthevariationoftheflowdischargeunderthesluicegateisverysmall.(2)Inthelinkbetweentherapidlyvariedflowandtheuniformflowdownstream,themeanwallshearstressandthecoefficientforthemechanicalenergylosswoulddecreaseinthelongitudinaldirection,thedecayoftheturbulentkineticenergynearthefreesurfaceismuchmoresignificantthanthatnearthebedinthelongitudinaldirection,andthemeanturbulentkineticenergyinthesectionwoulddecreaseinthelongitudinaldirectionandthedecreasingrateissmallerthanthatofthemeanwallshearstress.

简介：Thispaperpresentsamethodusingsimplephysicalvapourdepositiontoformhigh-qualityhafniumsiliconoxyni-tride(HfSiON)onultrathinSiO2bufferlayer.Thegatedielectricwith10A(1A=0.1nm)equivalentoxidethicknessisobtained.TheexperimentalresultsindicatethatthepreparedHfSiONgatedielectricexhibitsgoodphysicalandelectricalcharacteristics,includingverygoodthermalstabilityupto1000C,excellentinterfaceproperties,highdielectricconstant(k=14)andlowgate-leakagecurrent(Ig=1.9×103A/cm2@Vg=Vfb1VforEOTof10A).TaNmetalgateelectrodeisintegratedwiththeHfSiONgatedielectric.TheeffectiveworkfunctionofTaNonHfSiONis4.3eV,meetingtherequirementsofNMOSforthemetalgate.And,theimpactsofsputteringambientandannealingtemperatureontheelectricalpropertiesofHfSiONgatedielectricareinvestigated.

简介：ThegrowinginterestintheuseofGalliumArsenidssemiconductormaterialshaspresentedmanyopportunitiesfordeviceoperationalspeedimprovementsbuthasalsopresentedmanyproblemsforthedevicemaker,Anoveldeep-submicronx-raylithographyprocessforT-shapedgatepatternsusefulforhigh-electron-mobilitytransistors(HEMT)isintroducedinthiswork.InthefabricationofT-shapedgateatherrlayerresistsmethodisused.Thex-rayexposureexperimentswerefinishedbyBeijingSynchrotronRadiationFacility(BSRF)3B1Abeamline,andgoodresulthasbeenobtained.

简介：器官的地效果晶体管被真空蒸发作为活跃的层用pentacene制作了，polyimide由分别地作为门由真空蒸发作为绝缘体层，和铝旋转涂层，采购原料并且排干电极。0.079cm2/V.s的地效果活动性在Vds=70V，和开／关无线电被测试直到1.7脳104。CLC数字TN325.3-TN386.2工程被中国(60676033)的国家自然科学基础支持

简介：BasedonimprovedchargecontrolmodelandcombiningGSWvelocity-fieldequa-tion,aseriesofanalyticalsolutionsforthestaticcharacteristicsofHIGFETssuchasID-VD-VG,IDS-VG,GmandCGarederived.Theresultsofcalculationarecomparedwithexperimentaldatareportedinreferences,withintherangeofVG<2V,ID

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简介：Trendsintoday’ssteelproductionshowincreasingdemandsforhighly-sophisticatedsteelgrades.Therefore,thesteelindustrywilleventuallyberequiredtoinstallbestperformingtechnologiestomeetgovernmentalspecificationsdesignedtosignificantlyreduceenvironmentalemissions.Sucheffortsaresupportedbyinnovativenewsolutionsintheentiresteelmakingprocess.Oneprocessthatwillneedtobeaddressedisthecleanlinessofthesteelintheliquidsteelphase,especiallyduringtheBOF-tappingprocess.Thenewconvertergate(CG)(Fig.1)bestsupportstheslidegatetappingtechnologyforconvertersintermsofcleansteel,productivity,yieldandavailability-atreducedcosts.TheCGgateintroducesauniquefeatureforconverterslidegates:Thebottomplatecanbeexchangedwhilethegateremainsmountedontheconverter.Thisnewfeatureallowsforanincreasedutilisationoftherefractorypartsandasignificantreductionofthedowntimeoftheconverter.This'designedefficiency'isachievedwitharefractorysetconsistingofthreeidenticalplates-twobottomplatesandonesliderplate-andanozzle.AnumberofotherimprovementssuchasautomaticcylindercouplingusingtheInterstopSNAPtechnologyandatwosteptensioningsystemhavealsobeenimplemented.ThenewsystemisdesignedtomeetminimalspacerequirementsandthereforewilladapttomostBOFshops.Toperformpreparation,serviceandmaintenanceworkthemodularCGgatecanbedismountedfromtheconverterandsimultaneouslyreplacedbyaready-to-useunit.Thedegreeofautomationfordismountingandmountingaswellasforoff-linepreparationhasbeenenhancedandreducesmanualefforts.Thispaperprovidesasolutiontotheobvioustrendtowardsefficientandcontrolledproductionofcleansteel,ingeneral,andespeciallyatBOFshops.Moreover,itspecificallydescribestheoperationalresultsofthisinnovativeBOFtappingequipmentatSalzgitterFlachstahlGmbH,Germany.

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简介：一个新奇计划所有光并且门基于一个Fabry-Perot半导体，光放大器(FP-SOA)被建议，它的可行性被模拟验证。用这个计划，所有光并且门能与10dB的扑灭比率被认识到。扑灭比率上的脉搏间隔和脉搏宽度的影响也被调查。

简介：在这份报纸，分析了是在直角的频率分割的标志同步算法复合(OFDM)系统，并且完成是粗糙、精致的同步算法的硬件电路设计。基于粗糙、精致的同步算法的分析，多路，模块累加器，部门和输出判断，它能显然保存硬件资源费用。电路顺序和设计计划的波浪表格模拟的分析证明建议方法高效地减少系统资源和电源消费。