简介：Puretungsten（PW）andW-1wt%La2O3（WL10）werepreparedbypowdermetallurgicalroutefollowedbytheswaging+rollingprocess.Thelogarithmicstrainsare0,0.37,0.58,and0.98forWL10and0,0.58forPW.Heattreatmentswereperformedattemperaturesvariedfrom1,573to2,173Ktodeterminetherecrystallizationtemperature.Recrystallizationtemperaturesare1,973and2,173KforWL1（logarithmicstrainof0.37）andWL3（logarithmicstrainof0.98）,respectively.ButinthecaseofWL2（logarithmicstrainof0.58）,fullrecrystallizationisnotachievedattemperatureofabove2,173K.Furthermore,therecrystallizationtemperatureofPWwithlogarithmicstrainof0.58isatleast300KlowerthanthatoftheequivalentWL10sample.Moreover,theincreaseofrecrystallizationtemperatureinhibitsthestrengthdegradationofWL2:sampleslose4%and22%strengthwhenannealedat1,573and1,973Kcomparedwithroomtemperature（RT）sample.Finally,thetextureevolutionfortheswaged+rolledWL10issignificantlyrelatedtothedeformationdegree:thedominatedorientationis<001>forWL2while<110>forWL3.

简介：摘要硬质TiC、TiN、Ti(CN)薄膜因具有相似的性质，故合称为TiN类薄膜。TiN类薄膜因具有高强度、高硬度、化学稳定性好、耐磨及防腐蚀等一系列优点，其涂层被广泛作用于机械工业中的刀具、模具等表面，成为具有巨大应用前景的涂层材料。TiN类陶瓷膜由于其独特的性能而成为当前材料表面研究热点之一。文章简要介绍了利用化学气相沉积(CVD)、物理气相沉积(PVD)、双辉技术及其它表面处理技术制备TiN类膜的研究进展，讨论了各种制备方法的工艺特点。

简介：Inthiswork,laserinducedtungstenplasmahasbeeninvestigatedintheabsenceandpresenceof0.6Tstatictransversemagneticfieldatatmosphericpressureinair.Thespectroscopiccharacterizationoflaserinducedtungstenplasmawasexperimentallystudiedusingspace-resolvedemissionspectroscopy.Theatomicemissionlinesoftungstenshowedasignificantenhancementinthepresenceofamagneticfield,whiletheionicemissionlinesoftungstenpresentedlittlechange.Temporalvariationoftheopticalemissionlinesoftungstenindicatedthattheatomicemissiontimeinthepresenceofamagneticfieldwaslongerthanthatintheabsenceofamagneticfield,whilenosignificantchangesoccurredfortheionicemissiontime.Thespatialresolutionofopticalemissionlinesoftungstendemonstratedthatthespatialdistributionofatomsandionswereseparated.Theinfluenceofamagneticfieldonthespatialdistributionofatomswasremarkable,whereasthespatialdistributionofionswaslittleinfluencedbythemagneticfield.Thedifferentbehaviorsbetweenionsandatomswithandwithoutmagneticfieldinairwererelatedtothevariousatomicprocessesespeciallytheelectronsandionsrecombinationprocessduringtheplasmaexpansionandcoolingprocess.

简介：听，TiAlN，和TiAlSiN涂层在YT14切上被准备有CAIP(阴极弧离子plating)的工具表面，表面形态学和阶段与FESEM(地排放扫描电子显微镜学)被分析，并且XRD(X光检查衍射)，分别地并且象3D那样的涂层参数出现微地形学，谷物尺寸，表面高度，层次，侧面高度，和力量光谱密度，等等，与AFM(原子力量显微镜)被测量。结果证明锡，TiAlN，和TiAlSiN涂层的阶段是锡，TiN+TiAlN，TiN+Si3N4+TiAlN,分别地，当时表面粗糙S分别地，锡，TiAlN，和TiAlSiN涂层的是75.3，98.9，和42.1nm并且粗糙深度S分别地，k是209，389，和54nm平均谷物尺寸的顺序是TiAlN>锡>TiAlSiN。忍受索引S分别地，锡，TiAlN，和TiAlSiN涂层的双性人是0.884，1.01，和0.37，忍受能力的表面的顺序是TiAlN>锡>TiAlSiN。在更低的波长(102-103nm)，力量光谱密度有锡的某个关联，和顺序>TiAlN>TiAlSiN，当关联在更高的波长是低的时(>103nm)。

简介：Higher-κdielectricLaLuO_3,depositedbymolecularbeamdeposition,withTiNasgatestackisintegratedintohigh-mobilitySi/SiGe/SOIquantum-wellp-typemetal-oxide-semiconductorfieldeffecttransistors.Thresholdvoltageshiftandcapacitanceequivalentthicknessshrinkareobserved,resultingfromoxygenscavengingeffectinLaLuO_3withTi-richTiNafterhightemperatureannealing.Themechanismofoxygenscavenginganditspotentialforresistivememoryapplicationsareanalyzedanddiscussed.