简介:
简介:ThestatusoftheEuropeanX-rayFree-ElectronLaser(EuropeanXFEL),underconstructionnearHamburg,Germany,isdescribed.ThestartofoperationsoftheLCLSatSLACandofSACLAinJapanhasalreadyproducedimpressivescientificresults.TheEuropeanXFELfacilityispoweredbya17.5GeVsuperconductinglinearacceleratorthat,comparedtothesetwooperatingfacilities,willgeneratetwoordersofmagnitudemorepulsespersecond,upto27000.Itcanthereforesupportmodesofoperationswitchingthebeamupto30timespersecondamongthreedifferentexperiments,providingeachofthemwiththousandsofpulsespersecond.Thescientificpossibilitiesopenedupbythesecapabilitiesarebrieflydescribed,togetherwiththecurrentinstrumentaldevelopments(inoptics,detectors,lasers,etc.)thatarenecessarytoimplementthisprogram.
简介:Inthispaper,asurfacepotentialbasedthresholdvoltagemodeloffully-depleted(FD)recessed-source/drain(Re-S/D)silicon-on-insulator(SOI)metal-oxidesemiconductorfield-effecttransistor(MOSFET)ispresentedwhileconsideringtheeffectsofhigh-kgate-dielectricmaterialinducedfringing-field.Thetwo-dimensional(2D)Poisson’sequationissolvedinachannelregioninordertoobtainthesurfacepotentialundertheassumptionoftheparabolicpotentialprofileinthetransversedirectionofthechannelwithappropriateboundaryconditions.Theaccuracyofthemodelisverifiedbycomparingthemodel’sresultswiththe2DsimulationresultsfromATLASoverawiderangeofchannellengthsandotherparameters,includingthedielectricconstantofgate-dielectricmaterial.