Inthispaper,asurfacepotentialbasedthresholdvoltagemodeloffully-depleted(FD)recessed-source/drain(Re-S/D)silicon-on-insulator(SOI)metal-oxidesemiconductorfield-effecttransistor(MOSFET)ispresentedwhileconsideringtheeffectsofhigh-kgate-dielectricmaterialinducedfringing-field.Thetwo-dimensional(2D)Poisson’sequationissolvedinachannelregioninordertoobtainthesurfacepotentialundertheassumptionoftheparabolicpotentialprofileinthetransversedirectionofthechannelwithappropriateboundaryconditions.Theaccuracyofthemodelisverifiedbycomparingthemodel’sresultswiththe2DsimulationresultsfromATLASoverawiderangeofchannellengthsandotherparameters,includingthedielectricconstantofgate-dielectricmaterial.
