简介:Electricallypumpedhighpowerterahertz(THz)emittersthatoperatedaboveroomtemperatureinapulsemodewerefabricatedfromnitrogen-dopedn-type6H-SiC.Theemissionspectrahadpeakscenteredon5THzand12THz(20meVand50meV)thatwereattributedtoradiativetransitionsofexcitonsboundtonitrogendonorimpurities.Duetotherelativelydeepbindingenergiesofthenitrogendonors,above100meV,andthehighthermalconductivityoftheSiCsubstrates,theTHzoutputpowerandoperatingtemperatureweresignificantlyhigherthanpreviousdopantbasedemitters.Withpeakappliedcurrentsofafewamperes,andatopsurfaceareaof1mm2,thedeviceemittedupto0.5mWatliquidnitrogentemperature(77K),andtensofmicrowattsupto333K.ThisresultisthehighesttemperatureofTHzemissionreportedfromimpuritybasedemitters.