简介：Anewcatalyticchemicalvaporprocessfordepositingsiliconnitridefilmsusingsilanehydrazinegaseousmixtureisdescribed.Thissystemcanbeusefulatatemperatureoflowerthan400℃.Thecatalyticprocessgivesmorerapiddepositionratethan10nm/min.Theatomiccompositionration.N/Si,whichisevaluatedbyRutherfoldbackatteringmethodisabout1.4underagivenexperimentalconditionsmorethanthestoiciometricvalueof1.33inSi3N4.Theinfraredtransmissionspectrashowalargedipat850cm^-1duetoSi-NbondsandnocleardipduetoSi-Obonds.HighN-HbonddensityistheevidencethatthedepositionmechanismislimitedbyN-Nbondbreakingofthehydrazine.TheHcontents,evaluatedfromSi-HandN-Hbondsintheinfraredabsorptionspectra,andthedepositionratearemeasuredasafunctionofthesubstratetemperature.Inadditionsomefilmpropertiessuchasthereistivityandthebreakdownelectricfieldarepresented.

简介：ThediamondfilmshavebeendepositedbythehotfilamentCVDmethodonmolybdenumsubstratesfromthemixturereactantgasofacetoneandhy-drogen.Thesurfacemorphologiesoftheobtaineddiamondfilmsundervariousde-positionconditionshavebeenobservedbyscanningelectronmicroscope(SEM).Theexperimentalresultsstronglyindicatethatthesurfacemorphologiesofthere-sultingfilmshavecloselyrelatedtothedepositionconditions,i.e.,reactionpres-sure.Formolybdenumsubstrates,underthelowerreactionpressurethesurfacemorphologiesofthegrainscomprisingtheresultingfilmsmainlydisplaythesmallsinglecrystalcubo-octahedronanddoublesmallcrystalcubo-octahedron;underthehigherreactionpressure,thesurfacemorphologiesmainlydisplaythelargecauliflower-like.TheseresultsshowthattherearevariouscrystalhabitsforCVDdiamondundervariousdepositionconditions.

简介：有从50nm变化到600nm的不同厚度的钽薄电影被收音机频率磁控管作为免职温度(T)和偏爱电压(Ub)的功能劈啪作响在Si底层上扔。表面粗糙和它的动态进化行为是使用原子力量显微镜学(AFM)调查的份量上。与从300K增加T到600K，表面粗糙Rrms和动态代表逐渐地减少。随到-150V，Rrms和第一减少的从0V的Ub的增加然后增加。电影表面进化上的T和Ub的依赖以表面散开，墩生长，和离子侵犯效果被讨论了。

简介：高密度的CdS空nanospheres被一种简单化学蒸汽免职技术成功地综合。水晶结构，组合信息，和词法结构被X光检查衍射(XRD)描绘，扫描电子显微镜学(SEM)，传播电子显微镜学(TEM)，和精力散的X光检查分光计(EDX)。结果证明同样准备的CdS空nanospheres让制服缩放大约1在直径的3m。Kirkendall现象为CdSnanostructures的形成被建议。在580nm定位的强壮的排出物被观察。

简介：Amorphoussiliconfilmsarepreparedatlowertemperatureof350℃bynewcatalyticchemicalvapordepositionmethod.Inthemethod,materialgases(SiH4andH2)aredecomposedbycatalyticreactionatgiventemperature,soa-Sifilmsaredepositedonsubstrates.Itisfoundthata-Sifilmswithhighqualitycanbeobtain,suchashighphotosensitivityof10^6,lowspindensityof2.5×10^16cm^-3.

简介：有h<100>的铝氮化物(AlN)电影水晶的取向在希腊语的第二十三个字母(100)上被制作在由搏动的激光免职的房间温度的底层。激光精力密度的效果并且在这些电影的质量上退火被X光衍射学习，Fourier变换红外线的光谱学和扫描电子显微镜学。当有表面上的混杂粒子的增加的数字时，AlN电影的水晶的质量被增加激光精力密度更加改进。在600掳C的退火的处理在这部电影生产一个再结晶过程，由原来的crystallinity，新水晶的取向的外观，和雏晶的增加的改进描绘了。表面在退火期间由于谷物尺寸的增加变得更不平。CLC数字O484.1在资助下面由山东省的自然科学基础支持了没有Y2002A04

简介：Monodispersed硅石有353nm的直径的微范围是在乙醇的装配intophotonic水晶在借助于可控制的垂直免职方法的不同温度和湿度的改变的硅石体积部分的胶体的暂停。表面形态学和光性质被SEM和UV-Vis-NIR学习。这被发现high-qualitysilica胶体的photonic晶体与在45℃和55℃之间的环境温度从乙醇答案被获得，在66%和76%之间的湿度，微范围的体积部分是between0.8%并且1.5%。可控制的垂直免职方法制作的订的拥挤不堪的photonic水晶在可见轻乐队和近红外线的乐队有二photonic乐队差距。

简介：在这份报纸，64公里???铧???鯩????藥?貁裥鲽??匨??濄？？

简介：UsingCu-phthalocyanine(CuPc),4,4'-diaminodiphenyletherandpyromelliticdianhydrideasmonomermaterials,polyimide(PI)thinfilmsdoped-CuPchavebeenpreparedontoglasssubstratebyvaporphaseco-depositionpolymerizationunderavacuumof2×10-3Paandthermalcuringofpolyamicacidfilminattemperatureof150-200Cfor60min.Inthisprocess,thepolymerizationcanbecarriedoutthroughcontrollingthestoichiometricratio,heatingtimeanddepositionratesofthethreemonomers.IRspectrumidentifiesthedesignedchemicalstructureofthepolymer.Theabsorptionofpolyimidedoped-CuPcisveryintenseinvis-rangeandnear-infraredbyUV-Visspectrum.And,thePIfilmsdoped-CuPcpolymerizedbyvaporphasedepositionhaveuniformity,finethermalstabilityandgoodnonlinearopticalproperties,andthethird-orderopticalnonlinearsusceptibilityx(2)withdegeneratefour-wavemixingcanbe1.984×10-9ESU.

简介：WefabricatepolycrystallineCu(In,Ga)Se2(CIGS)filmsolarcellsonpolyimide(PI)substrateattemperatureof450°Cwithsingle-stageprocess,andobtainapoorcrystallizationofCIGSfilmswithseveralsecondaryphasesinit.Forimprovingitfurther,thetwo-stageprocessisadoptedinsteadofthesingle-stageone.AnextraCu-richCIGSlayerwiththethicknessfrom100nmto200nmisgrownonthesubstrate,andthenanotherCu-poorCIGSfilmwiththicknessof1.5-2.0μmisdepositedonit.Withthemodificationoftheevaporationprocess,thegrainsizeofabsorberlayerisincreased,andtheadditionalsecondaryphasesalmostdisappear.Accordingly,theoveralldeviceperformanceisimproved,andtheconversionefficiencyisenhancedbyabout20%.

简介：围单人赛的碳nanotubes(SWCNT)的一扇温度窗户生长被拉曼学习了光谱学。当温度比750掳C降低时，介绍的结果，有很少SWCNT，形成，并且什么时候比900掳C高的温度，集体非结晶的碳由于CH4的自我分解在SWCNT捆被形成。SWCNT的温度窗户高效地生长在800和900掳C之间，并且最佳生长温度是大约850掳C。这些结果被在不同温度下面形成的样品的传播电子显微镜图象支持。温度窗户为由催化化学蒸汽免职方法的SWCNT的大规模生产是重要的。