简介：根据实际应用需求,设计了一种X波段宽带圆波导耦合器。通过理论计算与数值模拟优化,实现频率9.3GHz时,耦合度约为一71.2dB;频率范围为9～10GHz时,耦合曲线平坦度小于0.3dB,可显著降低微波功率测量不确定度。为了提高耦合器的功率容量,对结构进行了改进,在耦合孔处进行了倒圆角处理。倒圆角半径为1mm时,耦合孔最高场强降低了52%,功率容量得到提高。

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简介：Wehavedevelopedanewradiographysetupwithashort-pulselaser-drivenx-raysource.Usingaradiographyaxisperpendiculartobothlong-andshort-pulselasersallowedoptimizingtheincidentangleoftheshort-pulselaseronthex-raysourcetarget.Thesetuphasbeentestedwithvariousx-raysourcetargetmaterialsanddifferentlaserwavelengths.Signaltonoiseratiosarepresentedaswellasachievedspatialresolutions.ThehighqualityofourtechniqueisillustratedonaplasmaflowradiographobtainedduringalaboratoryastrophysicsexperimentonPOLARs.

简介：Itisimpossibletodirectlyanalyzethemicrostructureofspin-valvemultilayersbasedonNi,F,CuandMnbyaconventionalX-raydiffractiontechniquebecausethelatticeparameterandatomicsatteringfactorsofthemareveryclose.Tosolvethisproblem,weuseanx-rayanomalousdiffractiontechniquetocharacterizethemicrostructuresofthe[Ni80Fe20/Fe50Mn50]15and[Ni80Fe20/Cu]15superlatticesystems.Theresultsshowthatmorediffractionpeaksandhigherinternsityinthereflectivetyprofileareobservedwhentheincidentenergyisclosetotheabsorptionedgeofthelighterelement(Mn)in[Ni80Fe20/Fe50Mn50]15multilayersystemsandtotheabsorptionedgeoftheheavierelement(Cu)inthe[Ni80Fe20/Cu]15multilayersystems.Theinterfaceandperiodicstructureof[Ni80F20/Fe50Mn50]15aremoreperfectthanthatofthe[Ni80Fe20/Cu]15superlattices.Theaboveresultsaredisussedinthispaper.

简介：Small-angleX-rayscattering(SAXS)usingsynchrotronradiationasX-raysourcehasbeenemployedtocharactcizcthemicroscopicstructrureoforgano-modifiedmesoporousmolecularsieves(organo-MSU-X)preparedbyaone-pottemplate-directedsynthesis.ItisshownthattheSAXSprofileishardlyconstantwithPorod’slawshowinganegativeslope,i.e.,negativedeviation.Thissuggeststhatthereisdiffuseinterfaciallayerlocatedbetweentheporesandthematrix.Thissuggeststhattheorganicgroupsremaincovalentlylinkedtothematrix,asindicatedby^29SiCPMASNMRandFT-IR.Theaveragethicknessoftheinterfaciallayerwasfoundtobeabout1nmforeachofthethreesampleswithdifferentkindsandthesameamounts(20?oforganicgroups.Thiskindofmaterialhasalsobeenprovedtopossessbothsurfaceandmassfractalstructureoftheamophousporoussilicamaterials.2001ElsevierScienceB.V.Allrightsreserved.

简介：ThispaperprovidesareviewonsampleinjectorswhichareprovidedatSPring-8AngstromCompactfreeelectronLAser(SACLA)forconductingserialmeasurementina‘diffract-before-destroy'schemeusinganx-rayfreeelectronlaser(XFEL).VersatileexperimentalplatformsatSACLAareabletoacceptvarioustypesofinjectors,amongwhichliquidjet,dropletandviscouscarrierinjectorsarefrequentlyutilized.Theseinjectorsproducedifferentformsoffluidtargetssuchasaliquidfilamentwithadiameterintheorderofmicrometer,micro-dropletsynchronizedtoXFELpulses,andslowlyflowingcolumnofhighlyviscousfluidwitharatebelow1μLmin-1.Characteristicsandapplicationsoftheinjectorsaredescribed.

简介：O434．122006065468强脉冲软X光辐照薄塑料闪烁体发光特性研究=LinearluminescenceforthinplasticscintillatorsunderintensesoftX-rayirradiation[刊,中]/宁家敏(中物院核物理与化学研究所．四川,绵阳(621900)),蒋世伦…//强激光与粒子束．—2006,18(7)．—1215-1218介绍了Z-pinch实验用软X光功率仪的测量原理,利用“强光一号”产生的强脉冲软X光对薄塑料闪烁体((?)40min×0．1mm)进行了辐照。实验中,采用两套软X光功率仪并安装在同一个大法兰面上．其中一套作为标准系统,参数保持不变,另一套系统的狭缝宽度逐渐增加,以改

简介：在北京同步辐射装置上应用同步辐射X射线小角散射技术研究TATB样品微孔状况，分析了微孔结构参数的变化。采用不同制备工艺(机械研磨、化学合成、气流细化、全结晶、粉碎)和不同存放时间的TATB粉末样品共计7份。

简介：介绍了辐射模拟加速器辐射场中脉冲X射线能谱的几种常用测量方法，阐述了基本原理、测量装置的典型系统组成、主要参数特性、技术发展状况和研究进展，描述了各种方法的优缺点和适用范围。以吸收法为例，综述了解谱技术的发展状况，并描述了多种解谱方法的特点。最后，重点介绍了西北核技术研究所脉冲X射线能谱测量的进展，并对测量系统抗噪和散射控制技术进行了评述。结合现有条件和技术成熟度，对今后工作的发展方向进行了展望。

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简介：ThefabricationofX-raymasksisacriticalandchallengingprocessinLIGAtechnique.Asinductivelycoupledplasma(ICP)deepetchingappearstobethemostsuitablesourcefordeepsiliconetching,wefabricatedanewtypeX-raymaskusingthistechnique.IncomparisonwithothertypesofX-raymasks,themaskwefabricatedhastheadvantagesofitslowcostanditssimplefabricationprocess.BesiredmicrostructureshavealsobeenfabricatedusingthisnewtypeX-raymaskinLIGAtechnique.

简介：ThegrowinginterestintheuseofGalliumArsenidssemiconductormaterialshaspresentedmanyopportunitiesfordeviceoperationalspeedimprovementsbuthasalsopresentedmanyproblemsforthedevicemaker,Anoveldeep-submicronx-raylithographyprocessforT-shapedgatepatternsusefulforhigh-electron-mobilitytransistors(HEMT)isintroducedinthiswork.InthefabricationofT-shapedgateatherrlayerresistsmethodisused.Thex-rayexposureexperimentswerefinishedbyBeijingSynchrotronRadiationFacility(BSRF)3B1Abeamline,andgoodresulthasbeenobtained.

简介：新型XRD不论是响应特性，还是外形体积，都必须满足谱仪小型化的要求。其次，需考虑色散元件，谱仪仍采取滤波法。由于三倍频打靶M带辐射强度大幅度提高，高能尾部对输出信号的贡献很大，所有探测道都必须抑制高能尾部，用掠入射平面镜截止的能量就更高。用平面镜截止高能X射线的途径：一是平面镜使用高原子序数材料，二是减小掠射角。

简介：报道了软X光能诺仪探别元件的能量响应曲线标定工作．实验利用北京同步辐射装置-3W1B束经及反射率计靶室，在束流40—80mA、贮存环电子能量2.2GeV专用光运行模式下，在150—1500eV能区的四个能段，做了铝阴极X射线二权管、滤光片及擦入射平面反射镜能量响应标定实验，通过实验数据比对及分析，最终给出X射线二极管在不同能量段最大可能的测量误差范围。