简介：ThecapacitytocaptureCO2wasdeterminedinseveralstoichiometriccompositionsintheLi2O–Bi2O3system.Thecompounds（Li7BiO6,Li5BiO5,Li3BiO4andLiBiO2phases）weresynthesizedviasolid-statereactionandcharacterizedbyX-raydiffraction,scanningelectronmicroscopyandN2adsorptiontechniques.Thesampleswereheat-treatedattemperaturesfrom40to750°CundertheCO2atmospheretoevaluatethecarbonateformation,whichisindicativeofthecapacityofCO2capture.Moreover,Li7BiO6showsanexcellentCO2capturecapacityof7.1mmol/g,whichisconsiderablyhigherthanthoseofotherpreviouslyreportedceramics.Li7BiO6isabletoreactwithCO2from240°Ctoapproximately660°CshowingahighkineticreactionevenatCO2partialpressurevaluesaslowas0.05.

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简介：Higher-κdielectricLaLuO_3,depositedbymolecularbeamdeposition,withTiNasgatestackisintegratedintohigh-mobilitySi/SiGe/SOIquantum-wellp-typemetal-oxide-semiconductorfieldeffecttransistors.Thresholdvoltageshiftandcapacitanceequivalentthicknessshrinkareobserved,resultingfromoxygenscavengingeffectinLaLuO_3withTi-richTiNafterhightemperatureannealing.Themechanismofoxygenscavenginganditspotentialforresistivememoryapplicationsareanalyzedanddiscussed.

简介：P-typenitrogen-dopedZnOfilmsarepreparedsuccessfullybyin-situthermaloxidationofZn_3N_2films.Thepreparedfilmsarecharacterizedbyx-raydiffraction,non-Rutherfordbackscattering(non-RBS)spectroscopy,xrayphotoelectronspectroscopy,andphotoluminescencespectrum.TheresultsshowthattheZn_3N_2filmsstarttotransformtoZnOat400°Candthetotalnitrogencontentdecreaseswiththeincreasingannealingtemperature.Thep-typefilmsareachievedat500℃withalowresistivityof6.33Ω·cmandahighholeconcentrationof+8.82×10~(17)cm~(-3),aswellasalowlevelofcarboncontamination,indicatingthatthesubstitutionalnitrogen(N_O)isaneffectiveacceptorintheZnO:Nfilm.ThephotoluminescencespectrashowclearUVemissionsandalsoindicatethepresenceofoxygenvacancy(V_O)defectsintheZnO:Nfilms.Thep-typedopingmechanismisbrieflydiscussed.

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简介：AnewlayeredCu-basedoxychalcogenideBa3Fe2O5Cu2S2hasbeensynthesizedanditsmagneticandelectronicpropertieswererevealed.Ba3Fe2O5Cu2S2isbuiltupbyalternativelystacking[Cu2S2]2-layersandironperovskiteoxide[（FeO2）（BaO）（FeO2）]2-layersalongthecaxisthatareseparatedbybariumionswithFe3+fivefoldcoordinatedbyasquare-pyramidalarrangementofoxygen.Fromthebondvalencearguments,weinferredthatinlayeredCuCh-based（Ch=S,Se,Te）compoundsthe+3cationinperovskiteoxidesheetprefersasquarepyramidalsite,whilethelowervalencecationprefersthesquareplanarsites.Thestudiesonsusceptibility,transport,andopticalreflectivityindicatethatBa3Fe2O5Cu2S2isanantiferromagneticsemiconductorwithaNe′eltemperatureof121Kandanopticalbandgapof1.03eV.Themeasurementofheatcapacityfrom10Ktoroomtemperatureshowsnoanomalyat121K.TheDebyetemperatureisdeterminedtobe113K.TheoreticalcalculationsindicatethattheconductionbandminimumispredominantlycontributedbyO2pand3dstatesofFeionsthatantiferromagneticallyarrangedinFeO2layers.TheFe3dstatesarelocatedatlowerenergyandresultinanarrowbandgapincomparisonwiththatoftheisostructuralSr3Sc2O5Cu2S2.

简介：Afacilestep-by-stepapproachisdevelopedforsynthesizingthehigh-efficiencyandmagneticrecyclableFe_3O_4@SiO_2@Ag@Nitrepang-likenanocomposites.ThismethodinvolvescoatingFe_2O_3nanorodswithauniformsilicalayer,reductionin10%H_2/AratmospheretotransformtheFe_2O_3intomagneticFe_3O_4,andfinallydepositingAg@Nicore-shellnanoparticlesontheL-lysinemodifiedsurfaceofFe_3O_4@SiO_2nanorods.Thefabricatednanocompositesarefurthercharacterizedbyx-raydiffraction,transmissionelectronmicroscopy,scanningelectronmicroscope,Fouriertransforminfraredspectroscopy,andinductivelycoupledplasmamassspectroscopy.TheFe_3O_4@SiO_2@Ag@Nitrepang-likenanocompositesexhibitremarkablyhighercatalyticefficiencythanmonometallicFe_3O_4@SiO_2@AgnanocompositestowardthedegradationofRhodamineB(RhB)atroomtemperature,andmaintainsuperiorcatalyticactivityevenaftersixcycles.Inaddition,thesesamplescouldbeeasilyseparatedfromthecatalyticsystembyanexternalmagnetandreused,whichshowsgreatpotentialapplicationsintreatingwastewater.

简介：High-performancethin-filmtransistors(TFTs)withalowthermalbudgetarehighlydesiredforflexibleelectronicapplications.Inthiswork,theTFTswithatomiclayerdepositedZnO-channel/Al_2O_3-dielectricarefabricatedunderthemaximumprocesstemperatureof200℃.First,weinvestigatetheeffectofpost-annealingenvironmentsuchasN_2,H_2-N_2(4%)andO_2onthedeviceperformance,revealingthatO_2annealingcangreatlyenhancethedeviceperformance.Further,wecomparetheinfluencesofannealingtemperatureandtimeonthedeviceperformance.Itisfoundthatlongannealingat200℃isequivalenttoandevenoutperformsshortannealingat300℃.ExcellentelectricalcharacteristicsoftheTFTsaredemonstratedafterO_2annealingat200℃for35min,includingalowoff-currentof2.3×10~(-13)A,asmallsub-thresholdswingof245mV/dec,alargeon/offcurrentratioof7.6×10~8,andahighelectroneffectivemobilityof22.1cm~2/V·s.Undernegativegatebiasstressat—10V,theabovedevicesshowbetterelectricalstabilitiesthanthosepost-annealedat300℃.Thusthefabricatedhigh-performanceZnOTFTwithalowthermalbudgetisverypromisingforflexibleelectronicapplications.