简介:Thesilicon-on-insulator(SOI)1×2Y-junctionopticalwaveguideswitchhasbeenproposedandfabricated,whichisbasedonthelargecross-sectionsingle-moderibwaveguidecondition,thewaveguide-vanishingeffectandthefree-carrierplasmadispersioneffect.Intheswitch,theSOItechniqueutilizersiliconandsilicondioxidethermalbondingandback-polishing.Theinsertionlossandextinctionratioofthedevicearemeasuredtobelessthan4.78dBand20.8dBrespectivelyatawavelengthof1.3μmandaninjectioncurrentof45mA.Responsetimeisabout160ns.
简介:Themixedl1/H2optimizationproblemforMIMO(multipleinput-multipleoutput)discrete-timesystemsisconsidered.Thisproblemisformulatedasminimizingthel1-normofaclosed-looptransfermatrixwhilemaintainingtheH2-normofanotherclosed-looptransfermatrixatprescribedlevel.ThecontinuitypropertyoftheoptimalvalueinrespecttochangesintheH2-normconstraintisstudied.Theexistenceoftheoptimalsolutionsofmixedll/H2problemisproved.Becausethesolutionofthemixedl1/H2problemisbasedonthescaled-Qmethod,itavoidsthezerointerpolationdifficulties.Theconvergentupperandlowerboundscanbeobtainedbysolvingasequenceoffinitedimensionalnonlinearprogrammingforwhichmanyefficientnumericaloptimizationalgorithmsexist.
简介:Linearcomplexityandk-errorlinearcomplexityofthestreamcipheraretwoimportantstandardstoscaletherandomicityofkeystreams.Forthe2n-periodicperiodicbinarysequencewithlinearcomplexity2n1andk=2,3,thenumberofsequenceswithgivenk-errorlinearcomplexityandtheexpectedk-errorlinearcomplexityareprovided.Moreover,theproportionofthesequenceswhosek-errorlinearcomplexityisbiggerthantheexpectedvalueisanalyzed.
简介:Thebandgappropertiesofone-dimensionalphotoniccrystalswithadefectlayerofnegativerefractiveindexmaterialsarestudied.Thedefectmodewidthisbiggerthanthatofconventionalone-dimensionalphotoniccrystalswithadefectlayerofpositiverefractiveindexmaterials.Thedefectmodeoftheformerisdifferentfromthatofthelatter,shiftstowardsthedirectionofhighfrequency(shortwavelength),andhasabiggershiftingvelocity.Furthermoretheeffectsonthetransmissionpropertiesoftheformerphotoniccrystalscausedbychangeinthepositionofthedefectlayerofnegativerefractiveindexareinvestigated.Finallytheopticalenhancementoftheformerphotoniccrystalsisalsoinvestigated.
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简介:Inthispaper,wedemonstratetheacetylehe(C2H2)sensorwithhighsensitivityusingahollow-corephotonicbandgapfiber(HC-PCF).ExperimentsformeasuringC2H2concentrationsingasmixtureareperformed.Usinga2m-longHC-PCFasgascell,thespectrumofacetyleneatn1+n3bandhasbeenmeasured,andtheP11-branchhasbeenselectedforthepurposeofsensing.Aminimumdetectivityof143partspermillionbyvolume(ppmv)forthesystemconfigurationisestimated.
简介:有约束力的精力和浅施主杂质的空效果精力移动在拉紧的GaN/AlxGa1xN球形的有限潜力的量声明点(QD)基于有效集体近似用一个变化方法是计算的。有约束力的精力作为点尺寸和静水力学的压力的功能被计算。数字结果证明杂质州的有约束力的精力增加,达到最大的值,然后当QD半径为任何电场增加,减少。而且,有约束力的精力为点的任何尺寸与压力增加。为大点尺寸的杂质精力的空移动为小点尺寸比那大得多,并且它被电场的增加提高。我们有或没有紧张效果比较杂质状态的有约束力的精力,并且结果证明紧张效果更加提高杂质绑定精力,特别为小QD尺寸。我们也在我们的工作考虑绝缘的失配。
简介:Organicmultiplequantumwells(OMQWs)consistingofalternatinglayersoforganicmaterialshavebeenfabricatedfromtris(8-hdroxyquinoline)aluminum(Alq)and2-(4-biphenylyl)-5-(4-tertbutylphenyl)-1,3,3-oxadiazole(PBD)byamultisource-typehigh-vacuumorganicmoleculardeposition.Fromthesmall-angleX-raydiffractionpatternsofAlq/PBDOMQWs,aperiodicallylayeredstructureisconfirmedthroughtheentirestack.TheAlqlayerthicknessintheOMQWswasvariedfrom1nmto4nm.Fromtheopticalaborption,photoluminescenceandelectroluminescencemeasurements,itisfoundthattheexcitonenergyshiftstohigherenergywithdecreasingAlqlayerthickness,ThechangesoftheexcitonenergycouldbeinterpretedastheconfinementeffectsofexcitonintheAlqthinlayers.Narrowingoftheemissionspectrumhasalsobeenobservedfortheelectroluminescentdevices(ELDs)withtheOMQWsstructureatroomtemperature.
简介:Lanthanidehasattractedmuchattentioninthefieldofopticalcommunicationsinrecentyears.SomepropertyanalysesonopticalwaveguideofNd-dopedcrystalNdxY1-xAl3(BO3)4andNd:MgO:LiNbO3aremadeinthispaper,followedbyintroductionofthemethodsofexperimentationandtheoreticalcalculationfortheplanaropticalwaveguides.Therefractiveindexprofilesoftheopticalwaveguidesareanalyzed.Theaboveworkoffersusefulinformationforstudyonnewtypematerialsforopticalcommunications.
简介:UsingdoublecrystalX-raysdiffraction(DCXRD)andatomicforcemicroscopy(AFM),theresultsofGexSi1-xgrownUHV/CVDfromSi2H6andSiH4areanalyzedandcompared.Adsorbatescanmigratetotheenergy-favoringpositionduetotheslowgrowthratefromSiH4.Inthiscase,aSibufferthatisolatestheeffectofsubstrateonepilayercouldnotbegrown,whichresultsinapitpenetratingintoepilayerandbuffer.TheFWHMis0.055°inDCXRDfromSiH4.Thepresenceofdiffractionfringesisanindicationofanexcellentcrystallinequality,TheroughnessofthesurfaceisimprovedifgrownbySi2H6:however,thecrystalqualityoftheGex2Si1-xmaterialbecameworsethanthatfromSiH4duetomuchlargergrowthratefromSi2H6.ThecontentofGeisobtainedfromDCXRD,whichindicatesthegrowthratefromSi2H6islargest,thenGeH4andthatfromSiH4isleast.