简介:H-infinityestimatorisgenerallyimplementedintimevariantstate-spacemodels,butitleadstohighcomplexitywhenthemodelisusedformultipleinputmultipleoutputwithorthogonalfrequencydivisionmultiplexing(MIMO-OFDM)systems.Thus,anH-infinityestimatorovertime-invariantsystemmodelsisproposed,whichmodifiestheKreinspaceaccordingly.InordertoavoidthelargematrixinversionandmultiplicationrequiredineachOFDMsymbolfromdifferenttransmitantennas,expectationmaximization(EM)isdevelopedtoreducethehighcomputationalload.JointestimationovermultipleOFDMsymbolsisusedtoresistthehighpilotoverheadgeneratedbytheincreasingnumberoftransmitantennas.Finally,theperformanceoftheproposedestimatorisenhancedviaanangle-domainprocess.Throughperformanceanalysisandsimulationexperiments,itisindicatedthattheproposedalgorithmhasabettermeansquareerror(MSE)andbiterrorrate(BER)performancethantheoptimalleastsquare(LS)estimator.JointestimationovermultipleOFDMsymbolscannotonlyreducethepilotoverheadbutalsopromotethechannelperformance.Whatismore,anobviousimprovementcanbeobtainedbyusingtheangle-domainfilter.
简介:Reversibledatahidingtechniquesarecapableofreconstructingtheoriginalcoverimagefromstego-images.Recently,manyresearchershavefocusedonreversibledatahidingtoprotectintellectualpropertyrights.Inthispaper,wecombinereversibledatahidingwiththechaoticHénonmapasanencryptiontechniquetoachieveanacceptablelevelofconfidentialityincloudcomputingenvironments.And,Haardigitalwavelettransformation(HDWT)isalsoappliedtoconvertanimagefromaspatialdomainintoafrequencydomain.Andthenthedecimalofcoefficientsandintegerofhighfrequencybandaremodifiedforhidingsecretbits.Finally,themodifiedcoefficientsareinverselytransformedtostego-images.
简介:ArobustdecentralizedH∞controlproblemforuncertainmulti-channelsystemsisconsidered.Theuncertaintiesareassumedtobetime-invariant,norm-bounded,andexistinboththesystemandcontrolinputmatrices.Thedynamicoutputfeedbackismainlydealtwith.Anecessaryandsufficientconditionfortheuncertainmulti-channelsystemtobestabilizedrobustlywithaspecifieddisturbanceattenuationlevelisderivedbasedontheboundedreallemma,whichisreducedtoafeasibilityproblemofanonlinearmatrixinequality(NMI).Atwo-stagehomotopymethodisusedtosolvetheNMIiteratively.First,adecentralizedcontrollerforthenominalsystemwithnouncertaintyiscomputedbyimposingstructuralconstraintsonthecoefficientmatricesofthecontrollergradually.Thenthedecentralizedcontrollerismodified,againgradually,tocopewiththeuncertainties.Oneachstage,avariableisfixedalternatelyattheiterationstoreducetheNMItoalinearmatrixinequality(LMI).Agivenexampleshowstheefficiencyofthismethod.
简介:中华文明源远流长,几千年来,创造了光辉灿烂的艺术和文化,可是,经历了太多的自然环境的侵蚀和战争等人为的破坏之后,很多艺术品的原作已被损毁,幸存下来的,也多是颜色陈旧灰暗,早已失去了往昔的风采,因为非常珍贵,这些艺术品往往被珍藏在博物馆,纪念馆或美术馆中,与平民百姓保持着一定的距离,怎样对艺术品原作进行有效的保护,怎样让艺术走近平民大众,成为摆在了现今人们面前的一道难题。
简介:Electricallypumpedhighpowerterahertz(THz)emittersthatoperatedaboveroomtemperatureinapulsemodewerefabricatedfromnitrogen-dopedn-type6H-SiC.Theemissionspectrahadpeakscenteredon5THzand12THz(20meVand50meV)thatwereattributedtoradiativetransitionsofexcitonsboundtonitrogendonorimpurities.Duetotherelativelydeepbindingenergiesofthenitrogendonors,above100meV,andthehighthermalconductivityoftheSiCsubstrates,theTHzoutputpowerandoperatingtemperatureweresignificantlyhigherthanpreviousdopantbasedemitters.Withpeakappliedcurrentsofafewamperes,andatopsurfaceareaof1mm2,thedeviceemittedupto0.5mWatliquidnitrogentemperature(77K),andtensofmicrowattsupto333K.ThisresultisthehighesttemperatureofTHzemissionreportedfromimpuritybasedemitters.
简介:Aneworganicsemiconductortartaricaciddopedsaltofemeraldinepolyaniline(PANI-C4H6O6)hasbeenobtainedbythemethodofoxidativepolymerizationofmonomericanilinewithammoniumpersulfateinacidicsolution.ThestructurewascharacterizedbyFourierTransformInfraredtechnique(FTIR)andX-raydiffraction(XRD).Thetemperaturedependencedcconductivityδdc(T)showsasemiconductorbehaviorandfollowsthequasionedimensionalvariablerangehopping(Q1D-VRH)model.Dataonδdc(T)arealsodiscussed.
简介:ThispaperfocusesontheH∞controllerdesignforlinearsystemswithtime-varyingdelaysandnormboundedparameterperturbetionsinthesystemstateandcontrol/disturbance.Ontheexistenceofdelayed/undelayedfullstatefeedbackcontrollers,wepresentasufficientconditionandgiveadesignmethodintheformofRiccatiequation.Thecontrollercannotonlystabilizethetime-delaysystem,butalsomaketheH∞normoftheclosed-loopsystembelessthanagivenbound.Thisresultpracticallygeneralizestherelatedresultsincurrentliterature.
简介:Themixedl1/H2optimizationproblemforMIMO(multipleinput-multipleoutput)discrete-timesystemsisconsidered.Thisproblemisformulatedasminimizingthel1-normofaclosed-looptransfermatrixwhilemaintainingtheH2-normofanotherclosed-looptransfermatrixatprescribedlevel.ThecontinuitypropertyoftheoptimalvalueinrespecttochangesintheH2-normconstraintisstudied.Theexistenceoftheoptimalsolutionsofmixedll/H2problemisproved.Becausethesolutionofthemixedl1/H2problemisbasedonthescaled-Qmethod,itavoidsthezerointerpolationdifficulties.Theconvergentupperandlowerboundscanbeobtainedbysolvingasequenceoffinitedimensionalnonlinearprogrammingforwhichmanyefficientnumericaloptimizationalgorithmsexist.
简介:Anultrahighvacuumchemicalvapordeposition(UHV/CVD)systemisintroduced.SiGealloysandSiGe/Simultiplequantumwells(MQWs)havebeengrownbycold-wallUHV/CVDusingdisilane(Si2H6)andgermane(GeH4)asthereactantgasesonSi(100)substrates.ThegrowthrateandGecontentsinSiGealloysarestudiedatdifferenttemperatureanddifferentgasflow.ThegrowthrateofSiGealloyisdecreasedwiththeincreaseofGeH4flowathightemperature.X-raydiffractionmeasurementshowsthatSiGe/SiMQWshavegoodcrystallinity,sharpinterfaceanduniformity.Nodislocationisfoundintheobservationoftransmissionelectronmicroscopy(TEM)ofSiGe/SiMQWs.TheaveragedeviationofthethicknessandthefractionofGeinsingleSiGealloysampleare3.31%and2.01%,respectively.
简介:Inthispaper,wedemonstratetheacetylehe(C2H2)sensorwithhighsensitivityusingahollow-corephotonicbandgapfiber(HC-PCF).ExperimentsformeasuringC2H2concentrationsingasmixtureareperformed.Usinga2m-longHC-PCFasgascell,thespectrumofacetyleneatn1+n3bandhasbeenmeasured,andtheP11-branchhasbeenselectedforthepurposeofsensing.Aminimumdetectivityof143partspermillionbyvolume(ppmv)forthesystemconfigurationisestimated.
简介:UsingdoublecrystalX-raysdiffraction(DCXRD)andatomicforcemicroscopy(AFM),theresultsofGexSi1-xgrownUHV/CVDfromSi2H6andSiH4areanalyzedandcompared.Adsorbatescanmigratetotheenergy-favoringpositionduetotheslowgrowthratefromSiH4.Inthiscase,aSibufferthatisolatestheeffectofsubstrateonepilayercouldnotbegrown,whichresultsinapitpenetratingintoepilayerandbuffer.TheFWHMis0.055°inDCXRDfromSiH4.Thepresenceofdiffractionfringesisanindicationofanexcellentcrystallinequality,TheroughnessofthesurfaceisimprovedifgrownbySi2H6:however,thecrystalqualityoftheGex2Si1-xmaterialbecameworsethanthatfromSiH4duetomuchlargergrowthratefromSi2H6.ThecontentofGeisobtainedfromDCXRD,whichindicatesthegrowthratefromSi2H6islargest,thenGeH4andthatfromSiH4isleast.