简介:采用单辊法制备了宽20mm、厚25μm的Fe78Si9B13合金带材,用绕带机将其绕制成环型磁芯,然后将磁芯进行退火处理,结果表明,随着退火温度的升高,Fe78Si9B13非晶磁芯的初始磁导率m、饱磁感应强度Bs和矫顽力Hc呈先增大后减小的趋势,当退火温度达到450℃时,磁化曲线呈现出一定的线性关系,即恒导磁特性。将经4500(=/100min退火的Fe78Si9B13非晶磁芯用环氧树脂进行封装后,环氧封装后μi和Bs减小,而Hc和损耗Ps增大,磁化曲线和损耗曲线的形状与封装前相同。
简介:AresearchonkineticsofAlevaporationfromliquidU—Alalloyswasmadeinavacuuminductionmelting(VIM)furnaceat1673—1843K.TheevaporationrateofAlwasfoundtobefirstorderwithrespecttoAlcontentinthemelt.TheoverallmasstransfercoefficientofAlwasdeterminedanditwasfoundthattheevaporationrateofAlincreasedwithincreasingtemperatures.TheapparentactivationenergyofAlevaporationat1673-1843Kwas171.5kJmol-1.ThevalueofmasstransfercoefficientofAlintheliquidphasewasestimatedtobe3.77×10-6,7.41×10-6,and9.40×10-6ms-1at1673,1753,and1843K,respectively.Meanwhile,ratedeterminingstepswerediscussedanditwasconcludedthattheevaporationrateofAlismainlycontrolledbyliquidphasemasstransfer.
简介:Intrinsiccarrierconcentration(ni)isoneofthemostimportantphysicalparametersforunderstandingthephysicsofstrainedSiandSi1-xGexmaterialsaswellasforevaluatingtheelectricalpropertiesofSi-basedstraineddevices.Uptonow,thereportonquantitativeresultsofintrinsiccarrierconcentrationinstrainedSiandSi1-xGexmaterialshasbeenstilllacking.Inthispaper,byanalyzingthebandstructureofstrainedSiandSi1-xGexmaterials,boththeeffectivedensitiesofthestatenearthetopofvalencebandandthebottomofconductionband(NcandNv)at218,330and393KandtheintrinsiccarrierconcentrationrelatedtoGefraction(x)at300KweresystematicallystudiedwithintheframeworkofKPtheoryandsemiconductorphysics.ItisfoundthattheintrinsiccarrierconcentrationinstrainedSi(001)andSi1-xGex(001)and(101)materialsat300KincreasessignificantlywithincreasingGefraction(x),whichprovidesvaluablereferencestounderstandtheSibasedstraineddevicephysicsanddesign.
简介:TheresistivityofHg0.89Mn0.11Tehasbeenmeasuredbythesuperconductingquantuminterferencedevicemagnetometerinthetemperaturerangefrom5to200Kundertheappliedmagneticfieldof1,2,4and6.5Tesla,respectively,comparedwiththatofno-magneticfield.Theresultsshowthattheresistivityincreaseswithincreaseappliedmagneticfieldathighertemperaturefrom80to200K,butdecreasesatlowertemperaturefrom5to25K.Thereexistsatransitiverangefrom25to80K,wherethevariationoftheresistivityshowsdifferenttendenciesdependingonthestrengthofmagneticfield.Maximumdifferenceofresistivityunder6.5Teslafromthatwithoutmagneticfieldinthetemperaturerangefrom30to200Kisonlyabout5Ω·cm,butitincreasesupto3ordersofmagnitudeat5K.TheanalysisshowsthatthevariationofresistivityofHg0.89Mn0.11Teunderthemagneticfieldisthealgebraicsumofthetransversedirectionmagnetoresistanceeffectandthesp-dexchangeinteractioneffect.TDRMEplaysmajorroleinthehightemperaturerange.However,withthedecreaseoftemperature,theeffectofsp-dEIontheresistivitygraduallyexceedsthatofthetransversedirectionmagnetoresistanceeffectthroughthetransitiverange,andbecomesthedominanteffectinthetemperaturerangefrom5to25K,whichleadstothedramaticdecreaseofresistivity.
简介:Layeredcathodematerialsofhigh-temperaturelithiumbatteries,LiNi1/3Mn1/3Co1/3O2aresynthesizedbyasol-gelmethodwithvariationinfinalsinteringtemperatureforboreholeapplications.Thestructure,morphologyandhigh-temperaturedischargeperformanceoftheseresultingproductsareinvestigatedbyX-RayDiffraction(XRD),scanningelectronmicroscopy(SEM),laserparticlesizeanalysis,galvanostaticandpulsedischarge.Theresultsofstructuralanalysisindicatethatthesamplesinteredat800℃hasthecharacteristicsofgoodcrystallinity,narrowsizedistributionandlargespecificsurfaceareaatthesametime.Thedischargeexperimentsalsoindicatethatthissamplehasthebestelectrochemicalproperties,withthemaximumdischargecapacitiesof314.57and434.14mAh·g-1at200and300℃respectivelyandtheminimumcellinternalresistancesatbothtemperatures.