简介:Theeffectofλ/2SiO2overcoatonthelaserdamagecharacteristicsofHfO2/SiO2high-reflector(HR)coatingsisinvestigatedwith1-on-1andN-on-1laserdamagetestmethods.Thelaserdamagesurfaceof1-on-1isanalyzedbyastepanalyzer.ThesurfacemorphologiesshowthatlaserdamagemakesthecoatingdamagedareaprotrudentandroughforHRcoatingwithoutλ/2silicaovercoat,butconcaveandsmoothforHRcoatingwithλ/2silicaovercoat.Theresultof10-on-1multi-pulseirradiationonthesamepointofthecoatingshowsthatthereisanenergydensitystageonthedamagecurve.Ifthelaserenergydensityiswithintherangeofthestage,HfO2/SiO2HRcoatingswithλ/2silicaovercoatwillnotbedamagedmorethan2timesformulti-shots,andthesurfacedamagesareveryslightsothatthereisnoimpactonthecoatingperformance.Anotherinterestingresultisthattheenergydensitystageextendsfromthedamagethresholdtothepointofabout3timesofthreshold,whichissimilartotheeffectofthelaserconditiononcoating.
简介:Thecombinationofdeepwetetchingandamagneto-rheologicalfinishing(MRF)processisinvestigatedtosimultaneouslyimprovelaserdamageresistanceofafused-silicasurfaceat355nm.ThesubsequentlydepositedSiO2coatingsareresearchedtoclarifytheimpactofsubstratefinishingtechnologyonthecoatings.Itisrevealedthatadeepremovalproceedingfromthesinglesideordoublesidehadasignificantimpactonthelaser-induceddamagethreshold(LIDT)ofthefusedsilica,especiallyfortherearsurface.Afterthedeepetching,theMRFprocessthatfolloweddoesnotactuallyincreasetheLIDT,butitdoesamelioratethesurfacequalitieswithoutadditionalLIDTdegradation.Thecombinationguaranteeboththeintegrityofthesurface’sfinishandthelaserdamageresistanceofthefusedsilicaandsubsequentSiO2coatings.
简介:Anultra-broadbandandfabrication-tolerantsiliconpolarizationrotatorsplitterisproposedinthisLetter.Benefittingfromthebroadbandandlow-losscharacteristicsofthebi-leveltaperandcounter-taperedcoupler,thedesigneddevicehasasimulatedinsertionlossandcrosstalkoflessthan0.2and-15dBinthewavebandfrom1290to1610nm.Thesecharacteristicsmakeitvaluableinapplicationswithlargebandwidthrequirements,suchasfull-gridCoarsewavelengthdivisionmultiplexer(CWDM)anddiplexer/triplexerfiber-to-the-homesystems.Thefabricationtoleranceofthedesignisalsoanalyzed,showingthatthedeviceperformanceisquitestablewithnormalmanufacturingerrorsinsiliconphotonicsfoundries.
简介:AseriesofAlx-(Alq3)1-xgranularfilmsispreparedonSiwaferwithnativeoxidelayerusingco-evaporationtechnique.Largelateralphotovoltaiceffect(LPE)isobserved,withanoptimalLPVsensitivityof75mV/mminx=0.35sample.ThedependenceofLPEontemperatureandAlcompositionisinvestigated,andthepossiblemechanismisdiscussed.
简介:SiO_2thinfilmscontainingSi_(1-x)Ge_xquantumdots(QDs)arepreparedbyionimplantationandannealingtreatment.Thephotoluminescence(PL)andmicrostructuralpropertiesofthinfilmsareinvestigated.ThesamplesexhibitstrongPLinthewavelengthrangeof400—470nmandrelativelyweakPLpeaksat730and780nmatroomtemperature.Blueshiftisfoundforthe400-nmPLpeak,andtheintensityincreasesinitiallyandthendecreaseswiththeincreaseofGe-dopingdose.Weproposethatthe400—470nmPLbandoriginatesfrommultipleluminescencecenters,andthe730-and780-nmPLpeaksareascribedtotheSi=OandGeOluminescencecenters.
简介:TheCa_2SiO_4:Dy~(3+)phosphorwassynthesizedbythehightemperaturesolid-statereactionmethodinair.TheemissionspectrumofCa_2SiO_4:Dy~(3+)phosphorshowsseveralbandsat486,575,and665nmunderthe365-nmexcitation.TheeffectsofLi~+,Na~+,andK~+ontheemissionspectrumofCa_2SiO_4:Dy~(3+)phosphorwerestudied,TheresultsshowthattheemissionspectrumintensityisgreatlyinfluencedbyLi~+,Na~+,andK~+.Thechargecompensationconcentrationcorrespondingtothemaximumemissionintensityisdifferentwithdifferentchargecompensations.
简介:银纳米团簇因其独特的与尺寸相关的光、电、磁和催化性能,引起了相关研究人员的高度关注,我们团队一直专注于研究用基于DNA保护的银纳米团簇监测DNA、Hg2+和巯基化合物。发现发生在DNA/银纳米复合物与G-四链体/血红素之间光诱导电子转移(PET),伴随着DNA/银纳米荧光减弱。这一新的PET系统使目标生物分子,如DNA和敏感性高的ATP获得特异性和多样性的检测。首次提出一种以DNA单体作为支架的高产率银纳米簇的合成方法。在这项研究中,采用密度泛函计算理论解释了DNA保护的银纳米团簇的形成机理以及为什么富胞嘧啶DNA是荧光银纳米簇的良好支架。研究结果对DNA保护荧光银纳米簇进一步实验和理论研究提供了基本指导思想,最终可能有助于程序化合成具有光致发光性能的DNA稳定银纳米团簇。
简介:Thenonlinearswitchingcharacteristicsoffusedfiberdirectionalcouplerswerestudiedexperimentally.Byusingfemtosecondlaserpulseswithpulsewidthof100fsandwavelengthofabout1550nmfromasystemofTi:sapphirelaserandopticalparametricamplifier(OPA),thenonlinearswitchingpropertiesofanullcoupleranda100%couplerweremeasured.Theexperimentalresultswerecoincidentwiththesimulationsbasedonnonlinearpropagationequationsinfiberbyusingsuper-modetheory.Nonlinearlossinfiberwasalsomeasuredtogettheinjectedpoweratthecoupler.Afterdeductingthenonlinearlossandinputefficiency,thenonlinearswitchingcriticalpeakpowersfora100%andanullfusedcouplerswerecalculatedtobe9410and9440W,respectively.ThenonlinearlossparameterPNinanexpressionofαNL=αP/PNwasobtainedtobePN=0.23W.
简介:Thepotentialenergycurves(PECs)ofBOmolecule,includingΣ+andΠsymmetrieswithdoubletspinmultiplicities,areobtainedemployingmulti-referenceconfigurationinteraction(MRCI)methodandDunning'scorrelationconsistentbasissets.Theanalyticalpotentialenergyfunctions(APEFs)arefittedusingtheMurrell-Sorbie(MS)functionandtheleastsquaremethod.BasedonthePECs,thespectroscopicconstantsofthestateshavebeendeterminedandcomparedwiththetheoreticalandexperimentalresultsavailabletoaffirmtheaccuracyandliabilityofthecalculations.Theroot-mean-square(RMS)errorsbetweenthefittedresultsandtheabinitiovaluesaretoolittleincomparisonwiththechemicalaccuracy(349.755cm-1).ItisshownthatthepresentAPEFsareaccurateandcandisplaytheinteractionbetweentheatomswell.ThepresentAPEFscanbeusedtoconstructmorecomplicatedAPEFordosomedynamicinvestigations.
简介:Usingamicrowavegenerator,chlorinedilutedbyheliumwasdissociatedtochlorineatomsthatsubse-quentlyreactedwithhydrogenazidetoproducetheexcitedstatesofNCl(a1△).Meanwhile,moleculariodinewithcarriergasofheliumreactedwithatomicchlorinetoproduceatomiciodinewhichthenwaspumpedtoexcitedstateofI(2P1/2)byanenergytransferreactionfromNCl(a1△).Inthispaper,thechangesofNCl(a1△)andNCl(bi∑)emissionintensityispresentedwhenI2/HeisintroducedintothestreamofCl/Cl2/He/HN3/NCl(a1△)/NCl(b1∑).ThedependencesofatomiciodineI(2P1/2)onflowratesofgaseswerealsoinvestigated.TheoptimumparametersforI(2P1/2)productionaregiven.
简介:Adiode-end-pumpedelectro-optic(EO)Q-switchedNd:YVO4laseroperatingatrepetitionrateof10kpps(pulsespersecond)wasreported.AblockofLa3Ga5SiO14(LGS)singlecrystalwasusedasaQ-switchandthedriverwasametaloxidesemiconductorfieldeffecttransistor(MOS-FET)pulserofhighrepetitionrateandhighvoltage.Atcontinuouswave(CW)operation,theslopeefficiencyofthelaserwas46%,andmaximumoptical-to-opticalefficiencywas38.5%.Usinganoutputcouplerwithtransmissionof70%,a10-kppsQ-switchedpulsetrainwith0.4-mJmonopulseenergyand8.2-nspulsewidthwasachieved,theopticalconversionefficiencywasaround15%,andthebeamqualityM2factorwaslessthan1.2.
简介:FourkindsofY2O3stabilizedZrO2(YSZ)thinfilmswithdifferentY2O3contents(from0to12mol%)aredepositedonBK7glasssubstratesbyelectron-beamevaporationmethod.TheeffectsofdifferentY2O3dopantcontentsonresidualstress,structure,andopticalpropertiesofZrO2thinfilmsareinvestigated.TheresultsshowthatresidualstressinYSZthinfilmsvariesfromtensiletocompressivewiththeincreaseofY2O3molarcontent.TheadditionofY2O3isbeneficialtothecrystallizationofYSZthinfilmandtransformationfromamorphoustohightemperaturephase,andtherefractiveindexdecreaseswiththeincreaseofY2O3molarcontent.Moreover,thevariationsofresidualstressandtheshiftsofrefractiveindexcorrespondtotheevolutionofstructuresinducedbytheadditionofY2O3.
简介:超快透射电子显微镜(UltrafastTransmissionElectronMicroscopy,UTEM)是一种能够以纳米尺度空间分辨研究超快动力学过程的前沿技术。在哥廷根大学最新的研究进展里,建造了第一台具有高度相干性电子源的第三代UTEM。通过从纳米针尖发射局域的光电子,获得高度相干的电子脉冲,能够在样品处将电子斑聚焦到数个纳米,同时具有300fs的脉冲时间宽度。介绍了利用这种先进电子光源UTEM装置的几个应用:对坡莫合金薄膜的磁涡旋纳米图案进行实空间洛伦兹成像,打开应用UTEM进行超快磁性研究的大门;通过将电子脉冲聚焦到数个纳米,我们局域地探测单晶石墨薄膜上飞秒激光激发的声学声子在边缘的传播和演化;演示了自由传播电子束在激光驱动的近场中受光学相位调制产生的电子动量态相干叠加。
简介:Ag-MgF2cermetfilmswithdifferentAgfractionswerepreparedbyvacuumevaporation.Themicrostruc-tureofthefilmswasexaminedbyRamanscatteringtechnique.Thesurface-enhancedRamanspectrumforMgF2moleculesinthecermetfilmstronglysuggeststheexistenceofAgnanoparticlesdispersedinMgF2matrix.TheintensitiesoftheRamanspectraofAg-MgF2cermetfilmsincreasewithAgfraction.TheenhancementofRamanscatteringdisappearswhenAgcontentreacheswt.20%.TheanalyseswiththetransmissionelectronmicroscopyshowedthatAg-MgF2cermetfilmsaremainlycomposedofamor-phousMgF2matrixwithembeddedfaced-center-cubicAgnanoparticles.Itsuggeststhatthepercolationthresholdshouldbearoundwt.20%ofAgcontent.
简介:Nitridatedβ-Ga_2O_3(100)substratewasinvestigatedasthesubstrateforGaNepitaxialgrowth.Theeffectsofnitridationtemperatureandsurfaceroughnessofβ-Ga_2O_3wafersontheformationofGaNwerestudied.Itwasfoundthatthemostoptimizednitridationtemperaturewas900°C,andhexagonalGaNwithpreferredorientationwasproducedonthewell-polishedwafer.Thenitridationmechanismwasalsodiscussed.