简介:针对DC/DC的质子位移效应,选取具有抗TID能力的DC/DC器件作为试验样品,在3MeV质子辐照条件下获取了器件的失效位移损伤剂量.结果表明,DC/DC功能失效是PWM控制器输出异常导致的.通过等效^60Coγ辐照及退火试验,排除了TID效应的影响,确定器件功能失效是由位移损伤引起的.高温退火后器件功能恢复,并立即对该器件进行了测试.结果表明,输出电压、电压调整度、负载调整度、交叉调整度、纹波及负载跃变时的输出电压均大幅衰退.利用这些敏感参数,获取了位移损伤导致的电源性能衰退模式.根据位移损伤缺陷类型及退火温度,分析了DC/DC的退火规律,可为DC/DC质子辐射损伤模拟试验方法的建立及其空间应用提供依据.
简介:Aself-consistenthybridMonteCarloFluidmodelispresentedtodescribethenitrogendcglowdischarge.ThemovementoffastelectronsissimulatedbytheMonteCarlomethodwhilethedynamicsofslowelectronsandionsisbyfluidequations.Thespatialfeaturesofthechargedspeciesandthecorrespondingelectricfieldthroughoutthedischargehavebeencalculated,whichincludethecreationratesofionsandslowelectrons,densitiesofthechargedspecies,theelectricfieldandthepotentialdistribution.Thesecloselyrelatedresultscangiveaselfconsistentexplanationofthedischargecharacteristicsthroughoutthespaceofnitrogendcglowdischarge.Thecalculatediondensityisalsocomparedwiththecorrespondingexperimentalresult.
简介:Non-transferreddcarcplasmageneratorsarewidelyusedinmaterialsprocessing.Theyaregenerallyconsideredsteadily-operatingdevises.However,unsteadyphenomenadoexistinthem,andmaycausenon-idealeffectsinprocesseswhichrequirehighcontrollabilityandreproducibility.Theseunsteadyphenomenacancauseparameterfluctuationsinthearcandtheplasmajet,someofwhichhavebeenstudiedinrecentyears.Severaltypesandmechanismsofthesephenomenahavebeenidentified.Thispaperreviewst...
简介:我们报导当前的摆动anddc-voltage-controlled的详细理论研究在做的GaAs/AlAs反响的通道超点阵在下面的混乱动力学交叉电并且磁场。当超点阵在否定微分速度区域被偏导时,当前的自激振荡与合适的做的集中被观察。当前的摆动模式和摆动频率能被dc电压偏爱影响,做密度,并且磁性删除。什么时候交流电与固定振幅删除,频率也被用于系统,不同非线性的性质与dcvoltage的变化出现在外部电路偏爱。我们小心地与不同检测混乱的方法学习这些非线性的性质。
简介:Inthispaper,weshowthatapositiverecurrentuidqueueisautomaticallyV-uniformlyergodicforsomefunctionV≥1butneveruniformlyergodic.Thisrevealsasimilarityofergodicitybetweenafluidqueueandaquasi-birth-and-deathprocess.AsabyproductofV-uniformergodicity,wederivecomputableboundsontheexponentialmomentsofthebusyperiod.
简介:Rotation in Reaction 19F+51VRotationinReaction19F+51V¥WangQi;LuJun;XuHushan;LiSonglin;ZhuYongtaiandZhangYuhuIndLssi...
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简介:Theeffectofbismuth(Bi)forbothVO2+/VO2+andV3+/V2+redoxcouplesinvanadiumflowbatteries(VFBs)hasbeeninvestigatedbydirectlyintroducingBionthesurfaceofcarbonfelt(CF).TheresultsshowthatBihasnocatalyticeffectforVO2+/VO2+redoxcouple.Duringthefirstchargeprocess,BiisoxidizedtoBi3+(neverreturnbacktoBimetalinthesubsequentcycles)duetothelowstandardredoxpotentialof0.308V(vs.SHE)forBi3+/BiredoxcouplecomparedwithVO2+/VO2+redoxcoupleandBi3+exhibitno(orneglectable)electro-catalyticactivity.Additionally,therelationshipbetweenBiloadingandelectrochemicalactivityforV3+/V2+redoxcouplewasstudiedindetail.2wt%Bi-modifiedcarbonfelt(2%-BiCF)exhibitsthehighestelectrochemicalactivity.Usingitasnegativeelectrode,ahighenergyefficiency(EE)of79.0%canbeachievedatahighcurrentdensityof160mA/cm2,whichis5.5%higherthanthepristineone.Moreover,theelectrolyteutilizationratioisalsoincreasedbymorethan30%.Eventhecelloperatedat140mA/cm2forover300cycles,theEEcanreach80.9%withoutobviousfluctuationandattenuation,suggestingexcellentcatalyticactivityandelectrochemicalstabilityinVFBs.
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简介:ImprovementofRadiologicalProtectionat600kVCockroft-WaltonGenerator¥ZhengHuazhi;ZhuHongbin;WangGuiling;LiZongqiang;SongWenJie;...