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简介:WehavedevelopedaplasmaetchingsimulatortoinvestigatetheevolutionofpatternprofilesinSiO2materialunderdifferentplasmaconditions.Thismodelfocusesonenergyandangulardependentetchingyield(physicalsputteringinthispaper),neutralandionangulardistributions,andreflectionofionsorneutralsonthesurfaceofaphotoresistorSiO2.TheeffectofpositivechargeaccumulationonthesurfaceofinsulatedmaskorSiO2isstudiedandthechargeaccumulationcontributestoadeflectionofiontrajectory.Thewaferprofileevolutionhasbeensimulatedusingacellular-automata-likemethodunderradio-frequency(RF)biasanddirect-current(DC)bias,respectively.Onthebasisofthecriticalroleofangulardistributionofionsorneutrals,thewaferprofileevolutionhasbeensimulatedfordifferentvariancesofangles.Observedmicrotrenchinghasbeenwellreproducedinthesimulator.Theratioofneutralstoionshasbeenconsideredandtheresultshowsthatbecausetheneutralsarenotacceleratedbyanelectricfield,theirenergyismuchlowercomparedwithions,sotheyareeasilyreflectedonthesurfaceofSiO2,whichmakesthetrenchshallower.
简介:以γ射线辐照硫代硫酸钠和硫酸镍的混合水溶液,所得沉淀物经乙醇多次清洗后60℃下烘干。将所得粉末样品分别在氩气氛中160-500℃焙烧4h,使用X射线衍射(XRD)及扩展X光吸收精细结构(EXAFS)分析样品的结构。结果表明,160℃以下烘干所得样品为纳米非晶,其Ni-S壳层为四配位结构,Ni-S键长为0.221nm。经300℃焙烧后,非晶转为NiS微晶,Ni-S壳层变为八面体六配位(红镍矿型)结构,Ni-S键长增加至0.238nm。进一步提高焙烧温度时,所形成NiS晶粒逐渐长大。对经500℃焙烧样品,X射线衍射检测到很尖锐的对应单一NiS物种的衍射峰。
简介:用同步辐射原位高压能散X射线衍射技术,对碳纳米管进行了结构和物性的研究,压力达50.7GPa。在室温常压下,碳纳米管的结构和石墨的hcp结构相似,其(002)衍射线的面间距为d002=0.3404nm,(100)衍射线的面间距为d100=0.2116nm。从高压X射线衍射实验看到,当压力升到8GPa以上,(002)线变宽变弱,碳纳米管部分非晶化。而当压力从10GPa或20GPa卸压至零,(002)线部分恢复。但当压力升至最高压力50.7GPa时,碳纳米管完全非晶化,而且这个非晶化相变是不可逆的。我们用Birch-Murnaghan方程拟合实验数据,得到体弹模量为K0=54.3±3.2GPa(当K’0=4.0时)。