简介：全球气候变暖正在挑战人类发展。面对日益严峻的挑战，我们应该意识到，节能减排，保护环境，是我们每一个人的责任。所以，我们应该从这一刻开始，关注生活细节，为保护我们的地球出一份力!

简介：摘要本文对比分析了GaN器件，CoolMOS和SiC二极管的开关损耗，并将图腾PFC和市场主流的H桥PFC进行对比研究。通过两台实验样机研究了GaN器件直接替换CoolMOS后的效率改善，也对比了两种拓扑都使用GaN器件的效率差异，对现有GaN器件的整体性能进行了评估。最后，都使用工频整流对两种PFC拓扑的效率提升空间进行了探索。

简介：Anewapproachtofabricatinghigh-qualityAlInGaNfilmasalattice-matchedbarrierlayerinmultiplequantumwells(MQWs)ispresented.Thehigh-qualityAlInGaNfilmisrealizedbygrowingtheAlGaN/InGaNshortperiodsuperlatticesthroughmetalorganicchemicalvapordeposition,andthenbeingusedasabarrierintheMQWs.ThecrystallinequalityoftheMQWswiththelattice-matchedAlInGaNbarrierandthatoftheconventionalInGaN/GaNMQWsarecharacterizedbyx-raydiffractionandscanningelectronmicroscopy.Thephotoluminescence(PL)propertiesoftheInGaN/AlInGaNMQWsareinvestigatedbyvaryingtheexcitationpowerdensityandtemperaturethroughcomparingwiththoseoftheInGaN/GaNMQWs.TheintegralPLintensityofInGaN/AlInGaNMQWsisover3timeshigherthanthatofInGaN/GaNMQWsatroomtemperatureunderthehighestexcitationpower.Temperature-dependentPLfurtherdemonstratesthattheinternalquantumefficiencyofInGaN/AlInGaNMQWs(76.1%)ismuchhigherthanthatofInGaN/GaNMQWs(21%).TheimprovedluminescenceperformanceofInGaN/AlInGaNMQWscanbeattributedtothedistinctreductionofthebarrier-welllatticemismatchandthestrain-inducednon-radiativerecombinationcenters.