简介:Thesteadyanddynamicpropertiesarecomparativelyinvestigatedforthen-dopedandnon-dopedInGaNLEDs.Thesimulatedresultsshowthatthen-dopedLEDexhibitsthesuperiorluminescenceandmodulationperformance,whichismainlyattributedtothehighercarrierradiativerateofn-dopedLED.Theresultscanexplainthereportedexperimentalresultsperfectly.
简介:Singlecrystal(100)InPsamplesand(0001)GaNepitaxiallayerswereirradiatedattheHeavyIonResearchFacilityinLanzhou(HIRFL)with86Krionsatroomtemperature.Theionfluencewasvariedfrom5×1010to1×1012cm?2.Additionally,thinaluminumfoilswithdifferentthickness(sometensofmicrometers)wereplacedinfrontofsomesamplestodeceleratetheSHI's.Ionbeamscanningwasusedtoirradiatethewholesamplesurfaceinauniformwayandmaintainednormalincidence.Topreventsampleheatingduringhigh-energyirradiation,thefluxwaskeptconstantbelow1.3×1010cm?2s?1.ThemodificationsofthesampleswereinvestigatedbyXRD.
简介:Inthispaper,theconductionband-edgenon-parabolicity(NP)andthecircularcross-sectionradiuseffectsonhydrogenicshallow-donorimpurityground-statebindingenergyinzinc-blende(ZB)InGaN/GaNcylindricalQWWsarereported.Thefinitepotentialbarrierbetween(In,Ga)NwellandGaNenvironmentisconsidered.Twomodelsoftheconductionband-edgenon-parabolicityaretakingintoaccount.Thevariationalapproachisusedwithintheframeworkofsinglebandeffective-massapproximationwithone-parametric1S-hydrogenictrialwave-function.ItisfoundthatNPeffectismorepronouncedinthewireofradiusequaltoeffectiveBohrradiusthaninlargeandnarrowwires.Moreover,thebindingenergypeakshiftstonarrowwireunderNPeffect.Agoodagreementisshowncomparedtothefindingsresults.
简介:Wetheoreticallypresenttheintrinsiclimitstoelectronmobilityinthemodulation-dopedAlGaN/GaNtwo-dimensionalelectrongas(2DEG)duetoeffectsincludingacousticdeformationpotential(DP)scattering,piezoelectricscattering(PE),andpolar-opticphononscattering(POP).WefindthatDEandPEarethemoresignificantlimitingfactorsatintermediatetemperaturesof40Kto250K,whilePOPbecomesdominantasroomtemperatureisapproached.Detailednumericalresultsarepresentedforthechangeofelectronmobilitywithrespecttotemperatureandcarrierdensity.Weconcludethatthesethreetypesofphononscattering,whicharegenerallydeterminedbythematerialpropertiesbutnotthetechnicalprocessing,arehardlimitstothe2DEGmobility.