简介：TungstenisenvisagedasoneofthemaincandidatematerialsfordivertorplateofITERandfuturefusionreactors.DuetoD-Treaction,PFMswouldsufferheliumirradiationfromplasmaadditionaltothehighheatloads.Heliumretentionandthermaldesorptionbehaviorarelargelyconcerned.

简介：·AIM:Toestablishanewmethodtorecordvisualevokedpotentialofratsandthismethodwasappliedtoretinalconedegeneration(RCD)andcongenitalstationarynightblindness(CSNB)ratstoseewhetheritisfeasible.·METHODS:Afteranesthesia,theratsscalpsurfacewasexposedandtwostainlessscrewswereimplantedat4mminfrontofand8mmbehindBregma.Thefrontonewasreferenceelectrodeandthelatteronewasrecordingelectrode.Thegroundelectrodewasjoinedtothetail.AndwerecordedVEPofscotopicadaptationandphotopicadaptation(Thestimulusintensityoflight:0.011,0.035,0.11,0.35,1.1and3.5cd·s/m2.Theywerealloverlappedfor100times.Therewere2-5minutesintervalsbetweendifferentintensities.Thefrequencyofstimulationwas1Hzandtimecoursewas300milliseconds).Aweeklater,werecordedtheVEPagaininthesameconditions.·RESULTS:Theratswhowereimplantedwithelectrodescouldlivelonger.Whentheywererecorded,therewasnodisturbanceandthewaveformswereveryclearandsteady.Therewasnodifferencebetweenthewaveformsrecordedbyconventionalmethodandthosebyimplantedelectrodeswhiletheamplitudeofnewmethodwaslargerthanconventional.WecouldgetthesameconclusioninRCDandCSNBrats.·CONCLUSION:Sincetheelectrodescanbekeptonthescalpforalongertime,wecannotonlyobservedynamicchangesofVEPbutalsoobservethelong-durationpatho-logicalchangesintherats.Becausethepositionsofrecordingandreferenceelectrodeswerefixed,thesystemerrorcanbereducedandtherepeatabilityofexperimentsincreased.·

简介：调查在上植入Ge在氨下面轧了由MOCVD成年然后在1100点退火的电影周围被执行了。与增加Ge培植剂量，四座另外的山峰在260的波浪数字产生，314，428并且在Ramam系列的670cm-1。在PL系列，与在2.66eV和黄乐队集中的PL乐队相比的乐队边排放的相对紧张随植入Ge的剂量的增加减少。260的模式和314cm-1被归因于散布的激活混乱的拉曼，而428的模式和670cm-1被分到空缺和空缺相关的建筑群的本地颤动。在2.66eV和黄乐队集中的PL乐队也与这些空缺缺点有关。在为样品的301cm-1的新拉曼山峰退火了仅仅5min由于缺乏的退火从Ge簇发源。

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简介：Theresidualelectricallyactivedefectsin(4×1012cm-2（30KeV）+5×1012cm-2（130KeV）)si-implantedLECundopedsi-GaAsactivatedbytwo-steprapidthermalannealing（RTA）LABELEDAS970℃（9S）+750℃（12S）havebeeninvestigatedwithdeepleveltransientspec-troscopy（DLTS）.TwoelectrontrapsET1(Ec-0.53eV,σn=2.3×10-16cm2)andET2（Ec-0.81eV,σn=9.7×10（-13）cm2）aredetected.Furthermore,thenoticeablevariationsoftrap’scon-centrationandenergylevelintheforbiddengapwiththedepthprofileofdefectsinducedbyionim-plantationandRTAprocesshavealsobeenobserved.The[Asi·VAs·AsGa]and[VAs·Asi·VGa·AsGa]areproposedtobethepossibleatomicconfigurationsofET1andET2,respectivelytoexplaintheirRTAbehaviors.

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简介：ThephysicalandelectricalpropertiesofBF2+implantedpolysiliconfilmssubjectedtorapidthermalannealing（RTA）arepresented.ItisfoundthattheoutdiffusionofFanditssegregationatpolysilicon/siliconoxideinterfaceduringRTAarethemajorcausesofFanomalousmigration.FluorinebubbleswereobservedinBF2+implantedsamplesatdosesof1×1015and5×1015cm-2afterRTA.

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简介：Wedemonstrateanovelhigh-accuracypost-fabricationtrimmingtechniquetofine-tunethephaseofintegratedMach–Zehnderinterferometers,enablingpermanentcorrectionoftypicalfabrication-basedphaseerrors.Theeffectiveindexchangeoftheopticalmodeis0.19inourmeasurement,whichisapproximatelyanorderofmagnitudeimprovementcomparedtopreviousworkwithsimilarexcessopticalloss.Ourmeasurementresultssuggestthataphaseaccuracyof0.078radwasachievablewithactivefeedbackcontrol.

简介：Theimplantedionrange,thedepthprofileandthefilmsttuctureoftheimplantedlayerwerestudied;thecarrierconcentrationandthemobilityweremeasured;theconductivitymechanismofthefilmimplantedFeintoAl2O3ceramicwasdiscussed.TheconclusionisthattheimplantedFe2+ionsmoveintoAl2O3latticeandreplaceAl3+toformsubs-titutionimpuritiessothattheionimplantedlat-tice,ascomparedwiththeoriginalone,presentsaneffectivenegativechargewhichformsanegativechargecenter.Avacancyisboundarroundit,andanacceptorisintroducedintheforbiddenband.

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简介：Background:Currently,thereisasignificantlackofdataconcerninglong-termoutcomesfollowingpaediatriccochlearimplantationintermsofqualityoflife.Thereisaneedforalong-term,prospectivestudyinthisregard.Thisstudyaimsathighlightingthepreliminaryresults,oneyearpostsurgeryofafiveyearprospectivestudy.Methods:TheCochlearTMPaediatricImplantedRecipientObservationalStudy（P-IROS）isaprospective,patientoutcomesregistryforroutinelyimplantedchildren.Thestudycollectsdatausingquestionnairespost-surgeryandatregularintervalsuptofiveyears.Results:AtourCentre,159cochlearimplantsurgeryprocedureswerecarriedoutbetweenJanuary2014andDecember2014.CategoryofAuditoryPerformanceIIscoreincreasedfrom‘0’to‘3’atsixmonthsandto‘5’at12monthsforchildrenaged0—3years,althoughthiswasnotstatisticallysignificant.However,thesametrendwasstatisticallysignificantfortheage3—6yearandage6—10yearbrackets.Thequalityoflifeofthechildimprovedsignificantly.Analysisofcommunicationmoderevealedastatisticallysignificantoverallshifttotheauditory-oralmodefromtotalcommunication.Conclusion:Cochlearimplantationisalife-changingintervention.Theevidenceinsupportofwhatitcanachievesafelyisclear.However,thecostsassociatedwithitraisethequestionifitwillremainaneffectiveoptionforlifeinallchildren.TheCochlearP-IROSisanattempttoanswerthesameoverafiveyearperiod.OurstudyinNewDelhi,sofarconcludesthatcochlearimplantationinapopulationwithlimitedaccesstofundsisveryeffective,oneyearaftersurgery.

简介：在在热退火之上的低精力和高剂量他植入6H-SiC的水泡进化被学习。面向的6H-SiC晶片在房间温度在11017厘米2的剂量与15个keV氦离子被植入。样品与培植以后为30min在1073，1173，1273，和1473K的温度被退火。他在晶片起泡经由代表性的传播被检验电子显微镜学(XTEM)分析。nanoscale水泡在同样植入的样品的损坏的层是几乎同类地分布式的在场的结果，和没有重要变化在退火的1073K以后在他植入样品被观察。在退火的1193K之上，在6H-SiC的He-implantation-inducedamorphization的几乎完整的再结晶被观察。另外，直径他起泡显然增加。与不断地增加温度到1273K和1473K，直径他起泡增加和格子缺点的数字密度减少。生长在退火的高温度接受成熟的Ostwald以后，他起泡机制。吝啬的直径他作为退火的一个函数在120-135nm的深度定位的水泡温度被装入产出1.914+0.236eV的一个激活精力的热激活的进程的术语。