简介：Moleculardynamics(MD)simulationswereperformedtostretchtherectangulargraphenesheetsdopedwithsilicon,nitrogenorboronatoms.Young’smodulus,ultimatestress(strain)andenergyabsorptionweremeasuredforthegraphenesheetswiththedopingconcentration(DC)rangingfrom0to5%.Theemphasiswasplacedonthedistincteffectsofeachindividualdopantonthefundamentalmechanicalpropertiesofgraphene.TheresultsindicatedthatincorporatingthedopantsintographeneledtoanalmostlineardecreaseinYoung’smodulus.Monotonicreductionsinultimatestrength,ultimatestrainandenergyabsorptionwerealsoobserved.Suchdopingeffectswerefoundtobemostsignificantforsilicon,lesspronouncedforboron,andsmallornegligiblefornitrogen.Theoutputsprovideanimportantguidanceforthedevelopmentandoptimizationofnovelnanoscaledevices,andfacilitatethedevelopmentofgraphene-basedM/NEMS.

简介：StraightandBentnano-cantileverspecimensarerespectivelyproposedtoinvestigatethesingle-modeandmixed-modecrackinitiationattheCu/Siinterfaceedgeinnanoscalecomponents.Withaminuteloadingapparatus,allnanoscalesamplesareinsituloadedandobserved.Numericalanalysisisemployedtoacquirethecriticalinterfacialstressdistributionsduringcrackinitiation.ThestressconcentrationregionsneartheedgeofCu/Siinterfaceinallspecimensarewithinthescaleof100nm,andthecriticalnormalandshearstresseshaveacircularrelationinnanoscalecomponents,whichrepresentsthefracturecriterionoftheinterfaceinnanoscalecomponents.