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简介：铍为脆性材料，在焊接时容易使焊缝开裂。为了防止焊缝开裂，途径之一是加延展性比较好的金属或合金(如Al-Si合金或银等)作填充材料进行钎接焊。但是，铍在非真空条件下焊接，在焊缝中出现的主要缺陷是焊接气孔和缩孔。人们早已知道，纯铝在焊接或铸造时的加热过程中会吸收环境中的氢，冷却时熔体要释放氢从而形成以氢为特征的氢气孔，进而影响铝加工的质量。这表明铝及铝合金焊接形成的气孔主要是与焊接时熔体的氢含量有关。那么，在加Al-Si合金焊接铍时，产生的气孔是否也与氢含量的关系，Al-Si合金熔体随温度升高氢含量有何变化趋势，Al-Si合金中的Si对铝熔体的吸氢起何作用。

简介：Inthispaper,high-speedsurface-illuminatedGe-on-Sipinphotodiodeswithimprovedeffidencyaredemon-strated.Withphoton-trappingmicroholefeatures,theexternalquantumefficiency（EQE）oftheGe-on-Sipindiodeis〉80%at1300nmand73%at1550nmwithanintrinsicGelayerofonly2μmthickness,showingmuchimprovementcomparedtoonewithoutmicroholes.MorethanthreefoldEQEimprovementisalsoob-servedatlongerwavelengthsbeyond1550nm.Theseresultsmakethemicrohole-enabledGe-on-SiphotodiodespromisingtocoverboththeexistingCandLbands,aswellasanewdatatransmissionwindow（1620-1700nm）,whichcanbeusedtoenhancethecapacityofconventionalstandardsingle-modefibercables.Thesephotodiodeshavepotentialformanyapplications,suchasinter-/intra-datacenters,passiveopticalnetworks,metroandlong-hauldensewavelengthdivisionmultiplexingsystems,eye-safelidarsystems,andquantumcommunications.TheCMOSandBiCMOSmonolithicintegrationcompatibilityofthisworkisalsoattractiveforGeCMOS,near-infraredsensing,andcommunicationintegration.

简介：WehavesynthesizedandinvestigatedphysicalpropertiesoftwonewquaternarycompoundsGd2CoAl4T2(T=Si,Ge)singlecrystals,whichareisostructuraltoTb2NiAl4Ge2andEr2CoAl4Ge2.Themostimportantstructuralfeatureofthesematerialsistheanti-CaF2-typeCoAl4T2slabs.Thesematerialsshowmetallicbehaviorbelow300Kandthereisalong-rangeantiferromagnetic(AFM)transitionappearingat20and27KforGdCoAl4Ge2andGd2CoAl4Si2,respectively.ResistivityandheatcapacitymeasurementsalsoconfirmthesebulkAFMtransitions.Furtheranalysisindicatesthatthislong-rangeantiferromagnetismshouldresultfromthemagneticinteractionbetweenlocalmomentsofGd^3+ions.

简介：Inthepresentwork,aninterconnectedsandwichcarbon/Si-SiO2/carbonnanospherescompositewaspreparedbytemplatemethodandcarbonthermalvapordeposition（TVD）.ThecarbonconductivelayercannotonlyefficientlyimprovetheelectronicconductivityofSi-basedanode,butalsoplayakeyroleinalleviatingthenegativeeffectfromhugevolumeexpansionoverdischarge/chargeofSi-basedanode.Theresultingmaterialdeliveredareversiblecapacityof1094mAh/g,andexhibitedexcellentcyclingstability.Itkeptareversiblecapacityof1050mAh/gover200cycleswithacapacityretentionof96%.

简介：做Si的Ge(2)sb(2)Te(5)电影被dc劈啪作响magnetronco与Ge2Sb2Te5和Si目标准备了。在在两结晶化温度和阶段转变温度fromface-centred-cubic(fcc)的增加的Te(5)电影结果分阶段执行到的Ge(2)sb(2)的Si的增加六角形(十六进制)阶段。Ge2Sb2Te5电影的抵抗力显示出重要增加，Si做。当在这部电影做Si的11.8at.%时，在退火的460度C以后的抵抗力与undopedGe2Sb2Te5电影相比从64～99终止从1～11m终止(.)厘米和动态抵抗增加增加。这对写阶段变化随机存取记忆的当前的减小很有用。

简介：Higher-κdielectricLaLuO_3,depositedbymolecularbeamdeposition,withTiNasgatestackisintegratedintohigh-mobilitySi/SiGe/SOIquantum-wellp-typemetal-oxide-semiconductorfieldeffecttransistors.Thresholdvoltageshiftandcapacitanceequivalentthicknessshrinkareobserved,resultingfromoxygenscavengingeffectinLaLuO_3withTi-richTiNafterhightemperatureannealing.Themechanismofoxygenscavenginganditspotentialforresistivememoryapplicationsareanalyzedanddiscussed.

简介：Si-richsiliconnitridefilmsarepreparedbyplasma-enhancedchemicalvapordepositionmethod,followedbythermalannealingtoformtheSinanocrystals(Si-NCs)embeddedinSiNxfloatinggateMOSstructures.Thecapacitance–voltage(C–V),current–voltage(I–V),andadmittance–voltage(G–V)measurementsareusedtoinvestigatethechargingcharacteristics.Itisfoundthatthemaximumflatbandvoltageshift(△VFB)duetofullchargedholes(～6.2V)ismuchlargerthanthatduetofullchargedelectrons(～1V).ThechargingdisplacementcurrentpeaksofelectronsandholescanbealsoobservedbytheI–Vmeasurements,respectively.FromtheG–VmeasurementswefindthattheholeinjectionisinfluencedbytheoxideholetrapswhicharelocatedneartheSiO2/Si-substrateinterface.CombiningtheresultsofC–VandG–Vmeasurements,wefindthattheholechargingoftheSi-NCsoccursviaatwo-steptunnelingmechanism.TheevolutionofG–VpeakoriginatedfromoxidetrapsexhibitstheprocessofholeinjectionintothesedefectsandtransferringtotheSi-NCs.

简介：利用YAG-50型声光调Q激光划片机对156＋156＊0．18mm的多晶硅太阳能电池片进行划片实验，得到了不同调Q频率和电池片电性能参数的关系，从而找出了Q开关的最佳频率范围值，并从理论上探讨分析了不同调Q频率范围划片得到的太阳能电池片电性能参数差异的原因。

简介：AmassofGaNnanowireshasbeensuccessfullysynthesizedonSi(111)substratesbymagnetronsputteringthroughammoniatingGa2O3/Cofilmsat950C.X-raydiffraction,scanningelectronmicroscopy,highresolutiontransmissionelectronmicroscopeandFouriertransformedinfraredspectraareusedtocharacterizethesamples.Theresultsdemonstratethatthenanowiresareofsingle-crystalGaNwithahexagonalwurtzitestructureandpossessrelativelysmoothsurfaces.ThegrowthmechanismofGaNnanowiresisalsodiscussed.更多还原

简介：用单辊甩带法制备了不含高生物毒性元素的Ti60Zr10Ta15Si15非晶薄带,并在高于其晶化开始温度的不同温度下对该非晶薄带进行了真空退火,研究了该非晶薄带在磷酸盐缓冲溶液（PBS）中的电化学腐蚀行为及热处理对其显微组织及其电化学行为的影响。结果表明,用单辊甩带法制备的Ti60Zr10Ta15Si15金属薄带为完全的非晶态结构,其玻璃转变温度和晶化开始温度分别为759K和833K,经过878K真空热处理后,薄带发生了部分晶化,在非晶的基底上析出了Ti相;经过938K热处理后,薄带发生了完全晶化,晶化相主要由Ti、Si3Ta5和SiZr以及TiSi组成。动电位极化测试表明,该非晶合金在PBS溶液中可表现出较为优异的耐蚀性能,部分晶化可进一步提高该合金的耐蚀性能,而完全晶化的合金抗腐蚀性能明显下降。

简介：Wepresentanovelandsimplemethodtoobtainanultrawidefreespectralrange(FSR)siliconringresonatortogetherwithatuningrangecoveringtheentirespectrumfrom1500to1600nm.AringresonatorwithalargeFSRtogetherwithahighQfactor,hightuningefficiency,andlowfabricationcostandcomplexityisdesiredformanyapplications.Inthispaper,weintroduceanovelwaytomakesucharingresonator,whichtakesadvantageofthewell-knownresonance-splittingphenomenon.ItisasingleringresonatorwithanFSRofmorethan150nmaround1550nmandwhichhasaneasythermo-optictunabilitythatcanproduceatuningrangearound90nmorevenmore.Moreover,thedeviceissimpletoimplementandcanbefabricatedinstandardcomplementarymetal-oxidesemiconductortechnologywithoutrequiringanykindofcomplicatedprocessingorextramaterials.Thepotentialapplicationsincludesinglemodelasercavities,wavelengthdivisionmultiplexingfilters,(de)multiplexers,opticalsensors,andintegratedreflectors.

简介：制备了金属-铁电层-绝缘层-半导体（Pt/Bi3.15Nd0.85Ti3O12/YSZ/Si,MFIS）二极管,研究了该二极管的存储窗口电压、疲劳特性和高温保持特性。结果表明：该二极管的存储窗口电压随扫描电压的增大呈先增大后减小的趋势,其中最大存储窗口电压约为0.88V且存储窗口电压的变化几乎不受扫描电压的扫描速度与频率的影响;该二极管在109次翻转循环后,其积累电容和耗尽电容基本没有变化,且存储窗口电压仅下降了5%。另外,该二极管在80℃下加速测量8h（相当于常温下测量60d）后,加速后器件的电容差比加速前降低了13%,说明该二极管抗疲劳特性和高温特性良好。

简介：采用溶胶-凝胶法制备了Pt/Bi3.15Nd0.85Ti3O12/SrTiO3/Si多层电容即金属-铁电层-绝缘层-半导体结构,并对其电学性能进行了测试与分析。获得的存储窗口电压约为2.5V,漏电流密度低于10-8A·cm-2,保持时间达7.5h以上。制备的SrTiO3薄膜表现出较高的介电性和较好的绝缘性。