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500 个结果
  • 简介:Ionimplantationmayfavorablymodifythepropertiesofpolyaniline/Siheterojunctionsolarcellsfabricatedbytheelectrochemicalmethod.Influencesoftheimplantationontheabsorptionspectrumandthethermalstabilitywerediscussedandoutputpropertiesweremeasured.Theresultsshowthattheabsorptionspectrumofthepolyanilinefilmsmodifiedbyionimplantationismuchwider;itspyrolytictemperatureincreasesby40℃,andthepolyaniline/Sicellefficiencyincreases18and3timesundertheilluminationof10.92and37.2W/m2,respectively.

  • 标签: 离子注入 异质结太阳电池 SI 性能
  • 简介:<正>TriQuintSemiconductor公司的研究人员宣布制造出世界上最大功率的Si衬底AlGaN/GaNHEMT。这种器件10GHz下的连续波输出功率密度达到7W/mm。此结果表明,GaN/Si已发展到对中、大功率晶体管具有吸引力的水平,可望用于X波段功率MMIC甚至更高的频率。

  • 标签: GaN 功率水平 大功率晶体管 Si HEMT TRIQUINT
  • 简介:WehavestudiedtheinterfacialstructuresofAlN/Si(111)grownbymetal-organicchemicalvapourdeposition.X-rayphotoelectronspectroscopyandAngerelectronspectroscopywereusedtoanalysethecomponentsandchemicalstructuresofAlN/Si(111).Theresultsindicatedthatamix-crystaltransitionregion,approximately12nm,waspresentbetweentheAlNfilmandtheSisubstrateanditwascomposedofAlNandSi3N4.AfteranalysiswefoundthattheexistenceofSi3N4couldnotbeavoidedintheAlN/Si(111)interfacebecauseofstrongdiffusionat1070℃.EveninAlNlayerSi-Nbonds,Si-Sibondscanbefound.

  • 标签: 薄膜 化学汽相淀积 AlN/Si(111)生长 界面特性
  • 简介:ArtisticValue:YunZhongJunandDaSitilingwascreatedin1954.FuBaoshistartedpaintingfiguresafterhisrelocationtoSichuanProvinceinthe1930SlHewaslessprolificinthisgenrethaninlandscapes,butneverthelessdevelopedandretainedadistinctivestyle,ExtensivelyculturedinChinesehistoryanddassicaliterature,

  • 标签: 《雨中君与司马命》 绘画作品 中国 绘画欣赏
  • 简介:Thephotocurrent-voltagecharacteristicsandphotoelectricsensitivityofa-Si:Hsampleswithslitandcombelectrodesaremeasured.Amethodforcalculatingthechargeintensifyinggainfromthephotoelectricsensitivityisproposed.Theobtainedchargeintensifyinggainofa-Si:Hunderanelectricfieldof105V/cmthroughthismethodisashighas4.3×103.Thegenerationprocessofthechargeintensificationeffectina-Si:Hisdiscussedonthebasisoftheenergyleveldiagram.Andtheproductofelectron’smobilityanditslifetimeiscalculatedfromthemeasuredvaluesofthegains.

  • 标签: A-SI:H semiconductor CHARGE INTENSIFICATION EFFECT PHOTOELECTRIC
  • 简介:MicrostructureandtextureofTi-Nb-Sibasedalloys,preparedbywaterquenchingfromβ-phasefield,coldrollingandrecrystallizationheattreatmentfollowedbywaterquenching,wereinvestigatedintermsofopticalmicrostructureandanalysisofX-raypolefigureresult.Inas-quenchedsample,relativelyrandomdistributionofpolefigurewasdetectedwithoutshowingaspecifictexturecomponent.Inas-coldrolledsample,however,itisfoundwell-developedseveraltexturecomponentsconsistingofrotatedcube,α-fiberandγ-fibertexturecomponentswhicharefrequentlyobservedinbcc-structuredmetalsandalloyswerefound.Therefore,texturecomponentsdevelopedinthepresentalloysarecloselyrelatedtothedeformationofβ-phaseeventhoughsmallamountofα″phaseco-existinthemicrostructure.Inrecrystallizedsample,α-fibertexturecomponentisweaklydetectedwhiletheothertexturecomponents,rotatedcubeandγ-fibercomponents,appearstoberelativelyunchanged.Noadditionaltexturecomponentsweredetectedbesidesthosetexturecomponentsobservedinthecoldrolledsamples.

  • 标签: Ti-Nb-Si BASED ALLOYS MICROSTRUCTURE TEXTURE
  • 简介:La9.33Si6O26氧离子导体被稳固的州的reactionmethod.Its综合结构被单个水晶的X光检查衍射分析在结果显示出的roomtemperature.The决定那La9.33Si6O26氧化物让磷灰石组织,空间groupP6_3/m.AC阻抗大小显示了在氮的氧化物sintered在空中比那些sintered有高得多的电导率。传导性上的谷物边界的效果被讨论。

  • 标签: 晶体结构 电导率 氧化离子 导体
  • 简介:碳族元素这一章除了一些规律性的知识外,还出现了一些特例,对这些特例,应该进行归纳总结并加以重视.1.一般情况下,较强氧化剂+较强还原剂较弱氧化剂+较弱还原剂,而C却能还原出还原性比它更强的Si(根据碳族元素性质递变顺序可知,非金属性有C>Si,而单质的还原性有C<Si),发生的反应为SiO2

  • 标签: 还原性 强氧化剂 溶液反应 二氧化硅 强还原剂 碳族元素
  • 简介:MoleculardynamicssimulationsareperformedtoinvestigateCF3continuouslybom-bardingtheamorphoussiliconsurfacewithenergiesof10eV,50eV,100eVand150eVatnormalincidenceandroomtemperature.TheimprovedTersoff-Brennerpotentialswereused.Thesimu-lationresultsshowthatthesteady-stateetchingratesareabout0.019,0.085and0.1701for50eV,100eVand150eV,respectively.Withincreasingincidentenergy,atransitionfromC-richsurfacetoF-richsurfaceisobserved.IntheregionmodifiedbyCF3,SiFandCFspeciesaredominant.

  • 标签: 分子动力学模拟 CF3 蚀刻率 硅刻蚀 机理 表面能量
  • 简介:Anovelapproachoftwo-steplasercrystallizationforthegrowthofpoly-Sithinfilmonglasssubstrateisinvestigated.Usingthisapproach,wefabricatedpoly-Sithinfilmtransistorswithelectronmobilityof103cm^2/V·sandon/offcurrentrationof1×10^7,Theyarebetterthanthoseofthepoly-SiTFTsfabricatedbyconventionalsingle-stepexcimerlasercrystallization.Wealsoanalyzedthestructureofthelasercrysallizedpoly-Sithinfilmandcalculatedtheellipsometricspectra.Thecalculatedresultsareingoodagreementwiththemeasuredresults.

  • 标签: 多晶硅 薄膜 激光 结晶化 薄膜电晶体 椭圆光度法
  • 简介:N-ZnO/p-Si异质接面被内在的ZnO电影的劈啪作响的免职在希腊语的第二十三个字母底层上准备。ZnO电影的厚度被从1h改变免职时间到3h改变。这些结构的电的性质从电容电压(C-V)被分析并且当前电压(I-V)特征表现在一个黑暗房间里。结果证明所有样品显示出强壮的修正行为。为有ZnO电影的不同厚度的样品的光电的性质被测量开的电路电压和短路电流调查。相片电压被坚守,这被发现当光电流变化时,与厚度一起的320mV几乎不变很多。ZnO电影的厚度的功能被调查的光电的效果的变化机制。

  • 标签: 光电子 ZNO SI 异质结 太阳能电池
  • 简介:TheagingbehaviorsofirradiatedtungstenbyhighenergySi3+andH+ionsaremainlyinvestigatedusinginternalfriction(IF)methodcombinedwithSEMtechnology.TheSEManalysisindicatesthatmoresevereirradiationdamageappearsinthesurfaceofsimultaneousdualSi3+H+irradiatedspecimenthanthatinthesequentialdualSi3+H+irradiatedspecimenorthesingleSi3+irradiatedspecimensbecauseofthesynergisticeffectofSiandHirradiation.TheIFbackgroundoftheirradiatedsampleisaboutoneorderofmagnitudehigherthanthatoftheunirradiatedsampleowingtotheexistenceofhighdensityfreshdislocationsinducedbySi/Hirradiation,InthesequentialdualSi3+andH+irradiatedspecimen,thehydrogenSnoek-Ke-Koster(SKK)peakassociatedwiththemovementofdislocationsdragginghydrogenatomsisobservedanditsheightdecreaseswithagingtimeatroomtemperature.AsforthesimultaneousdualSi3+H+irradiatedspecimen,however,thereisnosuchhydrogenSKKpeak.Thereasoncanbeexplainedashydrogendiffusionandpinningeffectofdislocations.

  • 标签: TUNGSTEN IRRADIATION damage internal FRICTION hydrogen-dislocation
  • 简介:MossbauerEffectofRapidlyQuenchedAl-Fe-V-Si-MmAlloysWangJianqiang(王建强),ChaoYuesheng(晁月盛),ZengMeiguang(曾梅光),ZhangBaojin(张宝金),Ch...

  • 标签: M SSBAUER SPECTROSCOPY Misch METAL Al-Fe-V-Si-Mm
  • 简介:Al-inducedlateralcrystallizationofamorphoussiliconthinfilmsbymicrowaveannealingisinvestigated.ThecrystallizedSifilmsareexaminedbyopticalmicroscopy,Ramanspectroscopy,transmissionelectronmicroscopyandtransmissionelectrondiffractionmicrography.Aftermicrowaveannealingat480℃for50min,theamorphousSiiscompletelycrystallizedwithlargegrainsofmain(111)orientation.Therateoflateralcrystallizationis0.04μm/min.Thisprocess,labeledMILC-MA,notonlylowersthetemperaturebutalsoreducesthetimeofcrystallization.ThecrystallizationmechanismduringmicrowaveannealingandtheelectricalpropertiesofpolycrystallineSithinfilmsareanalyzed.ThisMILC-MAprocesshaspotentialapplicationsinlargeareaelectronics.

  • 标签: 微波退火法 非晶硅薄膜 半导体材料 晶体生长 相变 Al诱导
  • 简介:Thisstudyaimstoinvestigatetheeffectofthe1-stepquenchingandpartitioning(Q&P)processonthemicrostructureandtheresultingVicker’shardnessof0.3C-1.5Si-1.5Mnsteelbyusingin-situdilatometry,opticalmicroscopy(OM),scanningelectronmicroscopy(SEM),X-raydiffractometry(XRD),andVicker’shardnessmeasurement.Systematicanalysesindicatethatthemicrostructureofthespecimensquenchedandpartitionedat150℃,200℃,250℃,and300℃mainlycompriseslathmartensiteandretainedaustenite.Thedilatometrycurveofthespecimenpartitionedat150℃ispresumablyascribedtotheformationofisothermalmartensite.Intheearlystagesofpartitioningat200℃,thenearlyunchangeddilatationcurveiscloselyrelatedtothesynergisticeffectofisothermalmartensiteformationandtransitionalepsiloncarbideprecipitation.Inthelaterstagesofpartitioningat200℃,theslightincreaseinthedilatationcurveisduetothecontinuousisothermalmartensiteformation.Withfurtherincreaseinpartitioningtemperatureto250℃,thedilatationincreasesgraduallyupto3600s,whichisrelatedtocarbonpartitioningandlowerbainiteformation.Partitioningatahighertemperatureof300℃causesarapidincreaseinthedilatationcurveduringtheinitialstages,whichsubsequentlylevelsoffuponprolongingthepartitioningtime.Thisismainlyattributedtotherapiddiffusionofcarbonfromathermalmartensitetoretainedausteniteandcontinuousformationoflowerbainite.

  • 标签: 淬火温度 钢组织 分区 板条马氏体 扫描电子显微镜 膨胀曲线
  • 简介:摘要:Si基GaN因其在制备功率电子器件领域重大的应用优势,且具有低衬底成本,衬底8英寸技术非常成熟,使得Si基GaN(GaN-on-Si)电子器件的社会经济效益比较高,在5G通信领域应用前景比较明朗。本文介绍了GaN-on-Si器件在5G通信领域内的技术应用趋势,以及所面临的市场竞争。

  • 标签: 功率器件 5G Si基GaN
  • 简介:2009年2月23日,中国超级摩托车锦标赛(CSBK)的第二次冬季官方测试开始。与第一次相比,参加本次测试的阵容强大了许多,参加车手达到了41人,足可媲美一场小型赛事。这次测试最大的亮点当然是中国宗申赛车队的现身。由于未能参加第一次冬季测试,宗申车队今年是否参赛、用哪几位车手参赛引起了不少的议论,此次“高调”现身,也让传言不攻白破。在参赛组别方面,宗申车队依然将参加SS600cc的比赛,同时,随着曾建航的成熟和升级,

  • 标签: 新人 测试 摩托车 车队 宗申
  • 简介:摘要目的探究中小面积烧伤患者临床治疗方法及其疗效。方法对我院2014年3月到2015年12月间接收的150例中小面积烧伤患者进行治疗,征得患者同意后,按照随机序号法将患者分为对照组和观察组,对照组采用常规湿润烧伤膏治疗,观察组经湿润烧伤膏联合冷疗治疗,观察两组效果并进行比较。结果观察组患者的有效率明显94.7%高于对照组80.0%,两组比较存在明显差异,P<0.05,差异具有统计学意义。观察组的患者满意率94.7%高于对照组78.7%,两组比较存在明显差异,P<0.05,差异具有统计学意义。结论综上所述,湿润烧伤膏联合冷疗治疗中小面积烧伤临床疗效良好,可以及时帮助患者恢复,同时提高治疗效果,因而值得我们借鉴使用。

  • 标签: 中小面积烧伤 临床治疗方法 疗效