简介：ThestainlessFe-Mn-Sishapememoryalloy(SMA)coatingwaspreparedonthesurfaceofAISI304stainlesssteel.Theprincipalresidualstressmeasuredbythemechanicalhole-drillingmethodindicatesthattheFe-Mn-SiSMAcladdingspecimenpossessesalowerresidualstresscomparedwiththe304stainlesssteelcladdingspecimen.Themeanstressvaluesoftheformerandthelatteron10-mm-thicksubstrateare4.751MPaand7.399MPa,respectively.What’smore,theirdeformationvalueson2-mm-thicksubstrateareabout0°and15°,respectively.Meanwhile,thevariationtrendandthevalueoftheresidualstresssimulatedbytheANSYSfiniteelementsoftwareconsistwithexperimentalresults.TheX-raydiffraction(XRD)patternshowsε-martensiteexistsinFe-Mn-SiSMAcoating,whichverifiesthemechanismoflowresidualstress.That’stheγ→εmartensitephasetransformation,whichrelaxestheresidualstressofthespecimenandreducesitsdeformationinthelasercladdingprocessing.

简介：Usinganewlow-temperatureprocess(＜600℃),thepoly-SiTFTwasfabricatedbymetal-inducedlateralcrystallization(MILC).Anultrathinaluminumlayerwasdepositedona-Sifilmandselectivelyformedbyphotolithography.Thefilmswerethenannealedat560℃toobtainlaterallycrystallizedpoly-Sifilm,whichisusedasthechannelareaofaTFT.Thepoly-SiTFTshowedanon/offcurrentratioofhigherthan1×106atadrainvoltageof5V.TheelectricalpropertiesaremuchbetterthanTFTfabricatedbyconventionalcrystallizationat600℃.

简介：镓氮化物的大数量(轧)nanowires经由Ga2O3电影在一个石英试管在950点在氧化的铝层上扔了的ammoniating被准备了。当水晶的wurtzite由X光检查衍射，X光检查光电子spectrometry扫描电子显微镜和精选区域的电子衍射轧了，nanowires被证实了。传播电子显微镜(TEM)和扫描电子显微镜学(SEM)表明nanowires非结晶、不规则，与从30nm到直到十微米的80nm和长度的直径。精选区域的电子衍射显示有六角形的wurtzite结构的nanowire是单身者水晶。生长机制简短被讨论。

简介：TheinvestigationonopticalpropertiesofSi1-xGex/Sistrainedlayerstructureshasbeencarriedoutactivelyinrecentyears.Thephotoluminescencehasbe-comeabriskersubjectinthestudiesofitsvariousopticalproperties.Aresearchdevelop-menttophotoluminescencepropertiesofsomenewSi1-xGex/Sistrainedlayerstruc-turesisintroduced.

简介：Theoptimumparametersarecalculatedbythelargecross-sectiontheoryandmodecut-offequation.Theeffectonreversebiasvoltagesinanalysedbythedopingconcentrationinn^+-Si.Theissignificantbecausethereversebiasincreasessharplywhenthedopedconcentrationinn^+-Siislessthan1×10^20cm^-3.

简介：Theresidualelectricallyactivedefectsin(4×1012cm-2（30KeV）+5×1012cm-2（130KeV）)si-implantedLECundopedsi-GaAsactivatedbytwo-steprapidthermalannealing（RTA）LABELEDAS970℃（9S）+750℃（12S）havebeeninvestigatedwithdeepleveltransientspec-troscopy（DLTS）.TwoelectrontrapsET1(Ec-0.53eV,σn=2.3×10-16cm2)andET2（Ec-0.81eV,σn=9.7×10（-13）cm2）aredetected.Furthermore,thenoticeablevariationsoftrap’scon-centrationandenergylevelintheforbiddengapwiththedepthprofileofdefectsinducedbyionim-plantationandRTAprocesshavealsobeenobserved.The[Asi·VAs·AsGa]and[VAs·Asi·VGa·AsGa]areproposedtobethepossibleatomicconfigurationsofET1andET2,respectivelytoexplaintheirRTAbehaviors.

简介：ＰｈｏｔｏｃｏｎｄｕｃｔｉｖｉｔｙＣｈａｒａｃｔｅｒｉｓｔｉｃｓｏｆＰｏｒｏｕｓＳｉ①ＣＨＡＯＺｈａｎｙｕｎ，ＷＡＮＧＫａｉｙｕａｎ（ＤｅｐａｒｔｍｅｎｔｏｆＥｌｅｃｔｒｏｎｉｃＥｎｇｉｎｅｒｉｎｇ，ＳｏｕｔｈｅａｓｔＵｎｉｖｅｒｓｉｔｙ，Ｎａｎｊｉ...

简介：Aconductionchannelmodelispropsedtoexplainthehighconductivitypropertyofnc-Si:H.Detailedenergybanddiagramisdevelopedbasedontheanalysisandcalculation,andtheconductivityofthenc-Si:Hwasthenanalysedonthebasisofenergybandtheory.Itisassumedthattheconductivityofthenc-Si:Hstemsfromtwoparts:theconductanceoftheinterface,wherethetransportmechanismisidentifiedasathermal-assistedtunnelingprocess,andtheconductancealongthechannelaroundthegrain,whichmainlydeterminedthehighconductivityofthenc-Si:H.Theconductivityofnc-Si:Hiscalculatedandcomparedwiththeexperimentdata.Thetheoryisinagreementwiththeexperiment.

简介：在大约431nm的蓝光在C+培植以后从取向附生的硅被获得，在顺序蚀刻的氢环境和化学药品退火。随化学蚀刻的增加，蓝山峰起初被一座红山峰最后提高，然后减少了并且代替。C=O混合物在C+培植期间被介绍并且在纳米Si的表面嵌入在退火期间形成了，并且最后被形成纳米硅与嵌入结构，它贡献蓝排放。介绍是光致发光的可能的机制。

简介：首次提出在Ni中掺入夹层W的方法来提高NiSi的热稳定性。具有此结构的薄膜,经600-800℃快速热退火后,薄层电阻保持较低值,小于2Ω/。经Raman光谱分析表明,薄膜中只存在NiSi相,而没有NiSi2生成。Ni（W）Si的薄层电阻由低阻转变为高阻的温度在800℃以上,比没有掺W的镍硅化物转变温度的上限提高了100℃。Ni（W）Si/Si肖特基势垒二极管能够经受650-800℃不同温度的快速热退火,肖特基接触特性良好,肖特基势垒高度为0.65eV,理想因子接近于1。

简介：Theeffectofhydrogenpassivationonmulticrystallinesilicon(mc-Si)usedforsolarcellsisdescribed,andthemechanismofhydrogendiffusionandpassivationisalsoinvestigated.Then,thehydrogenpassivationprocessesappliedinindustriesandresearchlaboratoriesareintroduced.Finallytheexistingproblemsandtheprospectsofhydrogenpassivationarereviewed.

简介：根据麦克斯韦的理论，在GeSi/Si超点阵nanocrystalline层的光传播特征被分析了并且计算。计算结果证明当全部的厚度L是340nm时，单个模式lightwave能仅仅在周期的数字M15.5被播送。在传播的方向，当传播距离比500m大时，另外，lightwave紧张极大地被减少。基于GeSi/Si超点阵nanocrystalline光电探测器的上述参数，设计和制造被执行。

简介：概述了Si激光器的研究现状.介绍了Si激光器可能的激射机构,它们是多孔硅发光、Si中杂质发光、Si-Ge量子阱发光等.介绍了Si激光器近期的研究情况以及实用化所面临的技术问题.

简介：

简介：剩余紧张和损坏由Si培植导致了在轧了样品被学习了，以及电子特征。这些成长得当的样品与Si的不同剂量被植入(1

简介：Ananalysisisgiventoexplaintheinstabilityofthehighconductivitypropertyofnc-Si:Hfabricated.Detaileddiscussioniscarriedoutconcentratingontheconductivityandgrowthmechanism.Itisassumedthattheinstabilityoftheconductivityofthenc-Si:Hstemsfromtwopart:thephasetransitionfromnanocrystallitesintoa-Si:H,andtheoxygenincorporationofthethinlayerofthefilm,whichcontributesmoretotheeffectwhenthefilmsufferstheexposuretoair.Thetheoryisinagreementwiththeexperimentandmeasurement.

简介：ZnS:有到3.2nm的从1.9nm的粒子尺寸的Mn2+nanocrystals(NC)经由化学降水方法被综合与不同[S2]/[Zn2+]比率。为Mn排放的尺寸依赖者腐烂展出双指数的行为。并且在毫秒时间领域，二一生值能两个都与尺寸被弄短增加，它被归因于提高了在主机和Mn2+杂质之间的相互作用。一个分子的结构模型被建议解释二个一生部件的趋势，它被相关到S空缺的数字(对)在Mn2+附近的缺点。

简介：WehavemeasuredthedeepenergyleveloftheInP:Fewhichissemi-insulatorthroughthemethodofOTCS.TheeffectoflightintensityonOTCSmeasurementismainlydiscussed.ThereareelectrontrapofET=0.034eVandholetrapofET=1.13eVinInP:Feunderthestronglightandlowtemperature.ThelocationoftheOTCSpeakofelectrontrap(ET=0.34eV)movestowardsthedirectionofhightemperaturer,whenthelightintensitywasincreased,ETisdifferentunderdifferentlightintensity.Itiscorrectedintermsoftheorythatthestuffratioofthedeepenergylevelisaffectedbythelightintensity.Theexperimentsshowthattheerrorisdecreasedgreatlywiththecorrection.

简介：Thetheoreticalexpressionoftherelationshipbetweenoptimumdopingcontentandcrystalstructureispresentedaswellasthepreparationmethods.Byusingthisexpression,theoptimumdopingcontentofsilicon-dopedboroncarbidethinfilmiscalculated.Thequantitativecalculationvalueisconsistentwiththeexperimentalresults.Thistheoreticalexpressionisalsoappropriatetoresolvetheoptimumdopingcontentforotherelectricmaterials.

简介：<正>Berkeley实验室的研究人员在Si衬底上采用氮化铪(H_fN)中间层生长出优良结构和光学质量的GaN膜。这些研究人员还建立了在Si上淀积H_fN和在H_fN上淀积GaN的工艺参数。用Si衬底而不用蓝宝石衬底来生长GaN提供了很大的成本优势,并提供了GaN基器件与常规Si电子器件单片集成的可能性。