简介：粒子免职行为在飞行员规模水花干衣机的圆锥形的节掠过牛奶，水和maltodextrin在管子中为粒子免职用简单关联被预言。这些材料的预言的粒子免职流动当时与测量免职流动相比。水花干衣机的预言的粒子免职政体被期望在diffusional并且混合(diffusional并且惯性)政体，而是试验性的结果建议粒子免职主要在惯性的政体。因此，使用管子关联在飞行员规模水花干衣机预言免职建议他们足够地不代表实际免职行为。这结果显示粒子流动模式的进一步的研究需要用数字模拟被执行(计算液体动力学，CFD)鉴于水花干衣机的另外的几何复杂性。

简介：搏动的electrodeposited技术被使用在柠檬性的酸答案与不同直径制作ZnTenanowirearrays进阳极的氧化铝膜。x-raypowder衍射，扫描电子显微镜学和传播选举显微镜学显示高订的、一致、单人赛水晶的nanowires被制作了。nanowire数组的光吸收系列证明ZnTenanowire数组的光吸收乐队边与公牛ZnTe的相比展出蓝移动，并且nonlinearcurrent电压特征被观察。

简介：Thisarticlebringsupsomeexplanationsandclarificationsabouttwicedepositionofleadiodidewritteninthepreviousarticle[1],afterlookingintothetwicedepositionofleadiodideandcarryingontheimprovingbyalayerofPbBr2insteadofPbI2,theshortcircuitcurrentdensity(Jsc)hasdecreased,allowingtoexplainthetwicedepositionis,infact,onedeposition.Theabsorbanceofperovskitewillbediscussed.Thesubstratetemperatureisthemostimportantparameterbecauseitcanimprovetheefficiencyoftheperovskitesolarcells,thesubstratetemperatureshouldbeabout100°Catthedepositionofleadiodide,andwhenthedepositionofmethylammoniumiodideisdonewhenthesubstrateisstillhot,theefficiencyisalsoimproved.Thetemperatureduringthepreparationislessimportantthanthehumidity,butthepreparationinthegloveboxallowsthattheenvironmentalconditionsbecontrolled.

简介：Depositionoftwo-dimensional（2D）MoS2materialsonthetaperedfiberallowsvariousphotonicapplicationsincludingsaturableabsorbersandfour-wavemixing.Ethanolcatalyticdeposition（ECD）ofMoS2ontheopticaltaperedfiberwasproposedanddemonstratedinthiswork.Differentfromtheconventionalopticaldrivendepositionusingwaterororganicsolvent,theECDmethodutilizedthehighvolatilityoftheethanolsolvent,whichsignificantlyincreasedthemovementspeedoftheMoS2nanosheetsandthusboostedthedepositionrateandreducedtheminimumpowerthresholdtodrivethedeposition.WebelievetheECDmethodshouldbeabletobeappliedtoothersimilar2Dmaterialssuchasothertypesoftransitionmetalchalcogenides.

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简介：Thispaperpresentsamethodusingsimplephysicalvapourdepositiontoformhigh-qualityhafniumsiliconoxyni-tride(HfSiON)onultrathinSiO2bufferlayer.Thegatedielectricwith10A(1A=0.1nm)equivalentoxidethicknessisobtained.TheexperimentalresultsindicatethatthepreparedHfSiONgatedielectricexhibitsgoodphysicalandelectricalcharacteristics,includingverygoodthermalstabilityupto1000C,excellentinterfaceproperties,highdielectricconstant(k=14)andlowgate-leakagecurrent(Ig=1.9×103A/cm2@Vg=Vfb1VforEOTof10A).TaNmetalgateelectrodeisintegratedwiththeHfSiONgatedielectric.TheeffectiveworkfunctionofTaNonHfSiONis4.3eV,meetingtherequirementsofNMOSforthemetalgate.And,theimpactsofsputteringambientandannealingtemperatureontheelectricalpropertiesofHfSiONgatedielectricareinvestigated.

简介：WehavestudiedtheinterfacialstructuresofAlN/Si(111)grownbymetal-organicchemicalvapourdeposition.X-rayphotoelectronspectroscopyandAngerelectronspectroscopywereusedtoanalysethecomponentsandchemicalstructuresofAlN/Si(111).Theresultsindicatedthatamix-crystaltransitionregion,approximately12nm,waspresentbetweentheAlNfilmandtheSisubstrateanditwascomposedofAlNandSi3N4.AfteranalysiswefoundthattheexistenceofSi3N4couldnotbeavoidedintheAlN/Si(111)interfacebecauseofstrongdiffusionat1070℃.EveninAlNlayerSi-Nbonds,Si-Sibondscanbefound.

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简介：Bariumferrite（BaM）thinfilmsaredepositedonplatinumcoatedsiliconwafersbypulsedlaserdeposition（PLD）.Theeffectsofdepositionsubstratetemperatureonthemicrostructure,magneticandmicrowavepropertiesofBaMthinfilmsareinvestigatedindetail.Itisfoundthatmicrostructure,magneticandmicrowavepropertiesofBaMthinfilmareverysensitivetodepositionsubstratetemperature,andexcellentBaMthinfilmisobtainedwhendepositiontemperatureis910℃andoxygenpressureis300mTorr（1Torr=1.3332×102Pa）.X-raydiffractionpatternsandatomicforcemicroscopyimagesshowthatthebestthinfilmhasperpendicularorientationandhexagonalmorphology,andthecrystallographicalignmentdegreecanbecalculatedtobe0.94.Hysteresisloopsrevealthatthesquarenessratio（Mr/Ms）isashighas0.93,thesaturatedmagnetizationis4004Gs（1Gs=104T）,andtheanisotropyfieldis16.5kOe(1Oe=79.5775A·m-1).Ferromagneticresonancemeasurementsrevealthatthegyromagneticratiois2.8GHz/kOe,andtheferromagneticresonancelinewithis108Oeat50GHz,whichmeansthatthisthinfilmhaslowmicrowaveloss.ThesepropertiesmaketheBaMthinfilmshavepotentialapplicationsinmicrowavedevices.

简介：Thetransportofablatedparticlesproducedbysinglepulsed-laserablationissimulatedviaMonteCarlomethod.Thepressurerangesofvelocitysplittingofablatedparticlesindifferentinertgasesareinvestigated.Theresultshowsthattherangeofvelocitysplittingdecreaseswiththeatomicmassoftheambientgasincreasing.TheambientgaswhoseatomicmassismorethanthatofKrcannotinducethevelocitysplittingofablatedparticles.Theresultsareexplainedbytheunderdampingmodelandtheinertiaflowmodel.

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简介：TheBrenner-LJpotentialisadoptedtodescribetheinteractionbetweenC36clustersanddiamondsurface,andthedepositionmechanismofmulti-C36clustersonthediamondsurfaceisalsostudiedbyusingthemethodofmoleculardynamicssimulation.Thesimulationresultsshowthatthecompetitioneffectsoftwointeractions,i.e.theinteractionbetweenclusterandclusterandtheinteractionbetweenclusterandcrystalplane,arestudied,andthentheinfluenceofthesecompetitioneffectsonC36clusterdepositionisanalysed.Thefindingisthatwhenanincidentenergyisappropriatelychosen,C36clusterscanbechemicallyadsorbedanddepositedsteadilyonthediamondsurfaceintheformofsingle-layer,andinthedepositionprocessthemulti-C36clusterspresentaphenomenonofenergytransmission.Theexperimentalresultshowsthatatatemperatureof300K,inordertodepositC36clustersintoasteadynano-structuredsingle-layeredfilm,theoptimalincidentenergyisbetween10and18eV,iftheincidentenergyislargerthan18eV,theC36clusterswillbedepositedintoanislandnano-structuredfilm.

简介：AtomicallythinMoS2filmshaveattractedsignificantattentionduetoexcellentelectricalandopticalproperties.Thedevelopmentofdeviceapplicationsdemandstheproductionoflarge-areathinfilmwhichisstillanobstacle.Inthisworkwedevelopedafacilemethodtodirectlygrowlarge-areaMoS2thinfilmonSiO2substrateviaambientpressurechemicalvapordepositionmethod.Thecharacterizationsbyspectroscopyandelectronmicroscopyrevealthattheas-grownMoS2filmismainlybilayerandtrilayerwithhighquality.Back-gatefield-effecttransistorbasedonsuchMoS2thinfilmshowscarriermobilityupto3.4cm2V-1s-1andon/offratioof105.Thelarge-areaatomicallythinMoS2preparedinthisworkhasthepotentialforwideoptoelectronicandphotonicdeviceapplications.

简介：Rhodium-andironphosphate-basedcatalystsarebyfarthemostpromisingcatalystsforoxy-brominationofmethane(OBM)reaction.However,mostliteraturereportedeitherRh-orFePO4-basedcatalysts,andtheresultswererarelystudiedinauniformenvironmentalcondition.Inthisreport,comparativestudywasconductedonsilica-andsiliconcarbide-supportedrhodiumandironphosphatecatalystswiththemainfocusesonstabilityperformanceandcokedeposition.ThecatalyticresultsdemonstratedthatthestabilityofbothRh-andFePO4-basedcatalystswasgreatlyinfluencedbythesupportsused,andsiliconcarbide-supportedcatalystsshowedmuchbetteranti-cokingabilityascomparedwithsilica-supportedones.Temperature-programmedoxidationovertheusedcatalystsfurtherindicatedthatthecokeformationmechanismswerecompletelydifferentbetweensilica-supportedrhodiumandironphosphatecatalysts.WhilecokesmightbecausedbycondensationofCH2Br2oversupportedironphosphate,methanedecompositionmightbethereasonforcokeformationoversilica-supportedrhodiumcatalyst.ThesefindingsmightpavethewayfordesigninghighlyefficientandstablecatalystsoftheOBMreaction.

简介：OnaccountoftheexcellentmechanicalpropertiesofCrNfilmsuchasgoodwearandcorrosionresistance,andoxidizationatamuchhighertemperature,CrNfilmhasbeendemonstratedasoneofthebestcoatingsforenlargingthebearingatpresent.However,steelworkinglifespanatpresentt.However,withthemoreincreasinglyaggressiveoftheworkingenvironmentofmechanicalcomponents,especiallyforbearingsteel,newcoatingtechnologieswithamorebetterpropertiesofthetreatedpartssuchaswearandcorrosionresistancearerequired.

简介：Wedemonstratelow-losshydrogenatedamorphoussilicon(a-Si:H)waveguidesbyhot-wirechemicalvapordeposition(HWCVD).Theeffectofhydrogenationina-SiatdifferentdepositiontemperatureshasbeeninvestigatedandanalyzedbyRamanspectroscopy.Weobtainedanopticalqualitya-Si:Hwaveguidedepositedat230°CthathasastrongRamanpeakshiftat480cm-1,peakwidth(fullwidthathalf-maximum)of68.9cm-1,andbondangledeviationof8.98°.Opticaltransmissionmeasurementshowsalowpropagationlossof0.8dB/cmatthe1550nmwavelength,whichisthefirst,toourknowledge,reportforaHWCVDa-Si:Hwaveguide.

简介：WereportonN-dopedp-typeZnOfilmswiththec-axisparalleltothesubstrate.ZnOfilmswerepreparedonana-Al2O3(0001)substratebysolid-sourcechemicalvapourdeposition(CVD),Zn(CH3COO)2.2H2OwasusedastheprecursorandCH3COONH4asthenitrogensource.Thegrowthtemperaturewasvariedfrom300℃to600℃,theas-grownZnOfilmdepositedat500℃showedp-typeconductionwithitsresistivityof42Ωcm,carrierdensity3.7×10^17cm^-3andHallmobility1.26cm^2V^-1.s^-1atroomtemperature,whicharethebestpropertiesforp-typeZnOdepositedbyCVD.Thep-typeZnOfilmpossessesatransmittanceofabout85%inthevisibleregionandabandgapof3.21eVatroomtemperature.

简介：ThisstudyshowsthepreparationofaTiO_2coatedPt/C(TiO_2/Pt/C)byatomiclayerdeposition(ALD),andtheexaminationofthepossibilityforTiO_2/Pt/Ctobeusedasadurablecathodecatalystinpolymerelectrolytefuelcells(PEFCs).CyclicvoltammetryresultsrevealedthatTiO_2/Pt/Ccatalystwhichhas2nmprotectivelayershowedsimilaractivityfortheoxygenreductionreactioncomparedtoPt/Ccatalystsandtheyalsohadgooddurability.TiO_2/Pt/Cpreparedby10ALDcyclesdegraded70%after2000Accelerateddegradationtest,whilePt/Ccorroded92%inthesameconditions.TiO_2ultrathinlayerbyALDisabletoachieveagoodbalancebetweenthedurabilityandactivity,leadingtoTiO_2/Pt/CasapromisingcathodecatalystforPEFCs.ThemechanismoftheTiO_2protectivelayerusedtopreventthedegradationofPt/Cisdiscussed.

简介：钻石电影被dc在瞬间底层上扔用CH4-H2-CO2煤气的混合物的热阴极的血浆化学药品蒸汽免职方法。调整CO2的流动，我们与扫描电子显微镜学在表面形态学，谷物取向和电影的水晶的质量上学习相关影响，X光衍射，拉曼光谱学分别地。结果证明这些电影的谷物取向与增加的CO2增加有转变，从(100)取向到(110)取向然后(111)取向。水晶的质量被改进，但是生长率被提起CO2的流动减少。试验性的结果也简短被讨论。[从作者抽象]