简介：Thestructureoftheopticalwaveguideof2-bitelectroopticA/Dconverterwithproton-exchangemicroprismsisoptimizedbythefinite-differencebeampropagationmethod(FD-BPM).Theelectrodeparametersoftheconverterareoptimizedbyconformalmapping.Theoptimalparametersareahalf-wavevoltageofVπ=4.5VandabandwidthofΔf=1.4GHz.Anormalizedtransmittedpowerof69.75%isobtainedbyFD-BMPandtheoutputwaveguidegapis300μm.

简介：A2D-directionofarrivalestimation(DOAE)formultiinputandmulti-output(MIMO)radarusingimprovedmultipletemporal-spatialsubspacesinestimatingsignalparametersviarotationalinvariancetechniquesmethod(TS-ESPRIT)isintroduced.InordertorealizetheimprovedTS-ESPRIT,theproposedalgorithmdividestheplanararrayintomultipleuniformsub-planararrayswithcommonreferencepointtogetaunifiedphaseshiftsmeasurementpointforallsub-arrays.TheTS-ESPRITisappliedtoeachsub-arrayseparately,andinthesametimewiththeotherstorealizetheparallellytemporalandspatialprocessing,sothatitreducesthenon-linearityeffectofmodelanddecreasesthecomputationaltime.Then,thetimedifferenceofarrival(TDOA)techniqueisappliedtocombinethemultiplesub-arraysinordertoformtheimprovedTS-ESPRIT.Itisfoundthattheproposedmethodachieveshighaccuracyatalowsignaltonoiseratio(SNR)withlowcomputationalcomplexity,leadingtoenhancementoftheestimatorsperformance.

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简介：0．概述近年来，中国的移动通信市场己开始从快速增长阶段进入到成熟阶段，随着3G的临近，新的运营商将会参与移动通信市场的竞争。面对日益激烈的竞争形势，中国移动作为国内移动通信市场占主导地位的运营商，如何处理现有GSM系统与3G之间的关系、制定合理的3G发展策略，以及顺利完成2G向3G过渡等，已成为面临的关键问题。

简介：<正>2015年2月2日,笙科电子(AMICCOM)发表2.4GHz单向2Mbps无线发射SoC芯片,命名为A8325。A8325为A7325的SoC整合型芯片,RF效能与A7325相同。可与笙科的2.4GHzRF或SoC搭配使用。A8325的传输速度高达2Mbps,并支持FSK与GFSK调变,数字部份整合高效能的1TPipeline8051,内建8KbytesOTPMemory、1KbytesRAM,与12/8个GPIO与各种数字接口。2线式的ICE可搭配KeilC开发。

简介：Anultra-highspeed1:2demultiplexerforopticalfibercommunicationsystemsisdesignedutilizingtheIHP0.25μmSiGeBiCMOStechnology.Thelatchofthedemultiplexercorecircuitisresearched.Basedonthecurrentmeasurementcondition,ahigh-gainandwide-bandwidthclockbufferisdesignedtodrivelargeload.Transmissionlinetheoryforultra-highspeedcircuitsisusedtodesignmatchingnetworktosolvethematchingproblemamongtheinput,outputandinternalsignals.Thetransientanalysisshowsthatthisdemultiplexercandemultiplexone100Gb/sinputintotwo50Gb/soutputs.Thechipareaofitis0.7mm×0.47mm,theinputandoutputdataarebothat400mVP-PPCMLstandardvoltagelevel,andthepowerconsumptionoftheICis900mWatthepowersupplyof-4V.

简介：已经有130多年历史的柯尼卡公司和70多年历史的美能达公司从2003年的秋天开始逐渐淡出人们的视野，真正成为“历史”，取而代之的是两者的“合壁”柯尼卡美能达(kenihminolta)。自今年1月发表经营合并以来，经过5月份股份交换合同的签定、6月份股东大会上对股份交换合同的表决认可，在8月5日通过交换股份方式实施了经营合并，10月1日实施了集团内事业的整合，日本柯尼卡株式会社和美能达株式会社的合并重组终于尘埃落定。

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简介：据《每日科学》报道,来自肯塔基大学、德国戴姆勒公司及希腊电子结构和激光研究所（IESL）的科学家们合作发现了一种单原子厚度的新型平面材料,该材料可替代石墨烯材料,并将推动数字技术的进步。尽管现在石墨烯备受瞩目,被认为是世界上最强韧的材料,但却有一个显见的不足——它不是半导体,这对其在数字产业的应用来说无疑是个打击。新材料由硅、硼、氮元素组成,3种元素都有重量轻、价格低、储量大的优点。此外,

简介：Thispaperpresentsanewarraystructureforestimatingtwo-dimensional(2-D)direction-of-arrivals(DOAs).ThestructureiscalledY-shapedarray,whichhas10%betteraccuracypotentialthanthenewly-developedL-shapedarray.Agreatmeritisitsabilitytoestimate2-DDOAswhicheverdirectionsthearrivingsignalscomefrom,comparedwithL-shapedarraywhoseperformancedependsonDOAs.Simulationresultsaregiventodemonstratetheperformanceofthenewarray.

简介：Aterahertz（THz）polarizerandswitchstructureisproposedbasedonthephasetransitionofvanadiumdioxide（VO2）.WhenVO2isintheinsulationphase,theresonancefrequenciesoftheproposedstructureare1.49THzand1.22THzforthex-andy-polarization,respectively.ItcanperformasaTHzpolarizerwithextinctionratiosof52.5dBand17dBforthey-andx-polarization,respectively;WhenVO2transformsintometallicphase,theresonancefrequencyforx-polarizationwaveshiftsfrom1.49THzto1.22THz,whilethatremainsstillforthey-polarizationcomponent.Itmeansthatthestructurecanworkasapolarization-dependentTHzswitchwithahighextinctionratioof32dB.

简介：＊高精密度，灵活性强－0201（0．6mm×0．3mm）-SOIC，PLCC

简介：AninitialstructuredesignofMMI1×8opticalpowersplittersisreported.ThewaveguidematerialisSi-basedSiO2Ge-dopedanddepositedbyPECVDmethod.Embeddedstripstructureisimpliedinthesectiondesign.ByusingBPM-CAD,afavorableresultisobtainedthatthisdevicehasasounduniformityandfairlylowloss.Meanwhile,simulationsofdesignswithcertainchangedparametersisalsoimplementedforabetterdesignconfiguration.

简介：因特网已成为全球最大的信息基础设施，在全球宽带化、移动化、IP化、融合化、个性化大潮中，IPv6的海量地址支持及改进的业务解析能力与PeertoPeer（P2P）对等互联及有效宽带资源共享传送能力相组合，可以期望将会对开启未来信息通信网络新时代做出新的贡献!

简介：Ｓｉｌｉｃｏｎ－ｏｎ－ｉｎｓｕｌａｔｏｒ１×２Ｙ－ｊｕｎｃｔｉｏｎＯｐｔｉｃａｌＳｗｉｔｃｈＢａｓｅｄｏｎＷａｖｅｇｕｉｄｅ－ｖａｎｉｓｈｉｎｇＥｆｅｃｔ①②ＺＨＡＯＣｅｚｈｏｕ（Ｍｉｃｒｏｅｌｅｃｔｒｏｎ．Ｉｎｓｔｉｔｕｔｅ，ＸｉｄｉａｎＵｎｉｖｅ...

简介：UnipolarresistiveswitchingbehaviorsoftheZnOandAl2O3/ZnOfilmsfabricatedonflexiblesubstratesbypulselaserdepositionwerestudiedinthispaper.Thefilmsweredepositedatroomtemperaturewithoutpost-annealingtreatmentduringtheprocess.XraydiffractionresultsindicatedthatZnOfilmhasadominantpeakat(002).ScanningelectronmicroscopyobservationshowedacolumnargrainstructureoftheZnOfilmtothesubstrate.ThebilayerdeviceofAl2O3/ZnOfilmshadstableresistiveswitchingbehaviorswithagoodenduranceperformanceofmorethan200cycles,highresistiveswitchingratioofover103atareadvoltageof0.1V,whichisbetterthanthatofthesingleoxidelayerdeviceofZnOfilm.Apossibleresistiveswitchingfilamentarymodewasdemonstratedinthispaper.TheconductionmechanismsofhighandlowresistancestatescanbeexplainedbyspacechargelimitedconductionandOhmic’sbehaviors.Theenduranceofthebilayer(BL)devicewasnotdegradeduponbendingcycles,whichindicatesthepotentialoftheflexibleresistiveswitchingrandomaccessmemoryapplications.

简介：Thesilicon-on-insulator(SOI)1×2Y-junctionopticalwaveguideswitchhasbeenproposedandfabricated,whichisbasedonthelargecross-sectionsingle-moderibwaveguidecondition,thewaveguide-vanishingeffectandthefree-carrierplasmadispersioneffect.Intheswitch,theSOItechniqueutilizersiliconandsilicondioxidethermalbondingandback-polishing.Theinsertionlossandextinctionratioofthedevicearemeasuredtobelessthan4.78dBand20.8dBrespectivelyatawavelengthof1.3μmandaninjectioncurrentof45mA.Responsetimeisabout160ns.

简介：Themixedl1/H2optimizationproblemforMIMO(multipleinput-multipleoutput)discrete-timesystemsisconsidered.Thisproblemisformulatedasminimizingthel1-normofaclosed-looptransfermatrixwhilemaintainingtheH2-normofanotherclosed-looptransfermatrixatprescribedlevel.ThecontinuitypropertyoftheoptimalvalueinrespecttochangesintheH2-normconstraintisstudied.Theexistenceoftheoptimalsolutionsofmixedll/H2problemisproved.Becausethesolutionofthemixedl1/H2problemisbasedonthescaled-Qmethod,itavoidsthezerointerpolationdifficulties.Theconvergentupperandlowerboundscanbeobtainedbysolvingasequenceoffinitedimensionalnonlinearprogrammingforwhichmanyefficientnumericaloptimizationalgorithmsexist.

简介：Anultrahighvacuumchemicalvapordeposition(UHV/CVD)systemisintroduced.SiGealloysandSiGe/Simultiplequantumwells(MQWs)havebeengrownbycold-wallUHV/CVDusingdisilane(Si2H6)andgermane(GeH4)asthereactantgasesonSi(100)substrates.ThegrowthrateandGecontentsinSiGealloysarestudiedatdifferenttemperatureanddifferentgasflow.ThegrowthrateofSiGealloyisdecreasedwiththeincreaseofGeH4flowathightemperature.X-raydiffractionmeasurementshowsthatSiGe/SiMQWshavegoodcrystallinity,sharpinterfaceanduniformity.Nodislocationisfoundintheobservationoftransmissionelectronmicroscopy(TEM)ofSiGe/SiMQWs.TheaveragedeviationofthethicknessandthefractionofGeinsingleSiGealloysampleare3.31%and2.01%,respectively.

简介：WefabricatepolycrystallineCu(In,Ga)Se2(CIGS)filmsolarcellsonpolyimide(PI)substrateattemperatureof450°Cwithsingle-stageprocess,andobtainapoorcrystallizationofCIGSfilmswithseveralsecondaryphasesinit.Forimprovingitfurther,thetwo-stageprocessisadoptedinsteadofthesingle-stageone.AnextraCu-richCIGSlayerwiththethicknessfrom100nmto200nmisgrownonthesubstrate,andthenanotherCu-poorCIGSfilmwiththicknessof1.5-2.0μmisdepositedonit.Withthemodificationoftheevaporationprocess,thegrainsizeofabsorberlayerisincreased,andtheadditionalsecondaryphasesalmostdisappear.Accordingly,theoveralldeviceperformanceisimproved,andtheconversionefficiencyisenhancedbyabout20%.