简介:ByanalyzingthemainrecombinationmechanismsinGaInAsSbmaterials,thedependencesofthedarkcurrentdensityandopencircuitvoltageinn+-pGaInAsSbthermophotovoltaiccellsontherecombinationparameters,carrierconcentrationandcellthicknessarecalculated.Theresultsshowthatthedarkcurrentmainlycomesfromp-region,anditisrelatedwiththesurfaceandAugerrecombinationsinlowandhighcarrierconcentrationranges,respectively.ThesurfaceandAugerrecombinationscanbesuppressedbyreducingthesurfacerecombinationvelocityandcarrierconcentration,respectively.Thedarkcurrentdensitycanbesuppressedbyoptimizingmaterialparametersanddevicesurfacepassivationtechnique.SothehighopencircuitvoltagecanbeobtainedforGaInAsSbthermophotovoltaiccells.
简介:2010年,3D潮流可谓锐不可挡,以主动快门式3D技术为代表的眼镜式3D电视大规模登陆市场,市场销售呈现开门红,预计全年全球销量将突破300万台,因此2010年可以称得上真正的"3D电视发展的开元之年"。眼镜的束缚似乎没有阻挡消费者对3D电视的欣赏热情,但冷静之余,我们却不得不面对眼镜式3D电视可能会对视力造成的不良影响,以及长时间观看所带来的头晕、恶心等不良感受,而且对近视眼患者因佩戴"双重"眼镜所带来的痛苦更是不可言状,因此,我们不得不承认,目前的眼镜式3D电视只能作为3D电视技术发展的过渡产品,而最终必然被成熟的裸眼3D电视技术所取代,裸眼3D显示将是未来3D电视技术发展的必然归宿。
简介:Comparedwithaccuratediagnosis,thesystem’sselfdiagnosingcapabilitycanbegreatlyincreasedthroughthet/kdiagnosisstrategyatmostkvertexestobemistakenlyidentifiedasfaultyunderthecomparisonmodel,wherekistypicallyasmallnumber.BasedonthePreparata,Metze,andChien(PMC)model,then-dimensionalhypercubenetworkisprovedtobet/kdiagnosable.Inthispaper,basedontheMaengandMalek(MM)?model,anovelt/k-faultdiagnosis(1k4)algorithmofndimensionalhypercube,calledt/k-MM?-DIAG,isproposedtoisolateallfaultyprocessorswithinthesetofnodes,amongwhichthenumberoffault-freenodesidentifiedwronglyasfaultyisatmostk.ThetimecomplexityinouralgorithmisonlyO(2nn2).
简介:AwedgeshapeSiLEDisdesignedandfabricatedwith0.35μmdouble-gratingstandardCMOStechnology.ThedevicestructureisbasedontheN-well-P+junction.TheP+hasawedgeshapeandissurroundedbytheN-well.ThemicrographsofSiLEDs'emittingandlayoutarecaptured.TheI-VcharacteristicandspectraoftheSiLEDaretested.Underroomtemperatureandbackwardbias,itsradiantluminosityis12nWat100mA,andthewavelengthoftheemittingpeakislocatedat764nm.
简介:Cupricoxide(CuO)isconsideredtobeapromisingmaterialforphotovoltaicapplications.Inthispaper,p-CuO/n-Sijunctionsolarcellswereobtainedbythermaloxidationofmetalliccopperfilmsdepositedonn-Sisubstratesat400℃for5h.X-raydiffractionpatternsshowthattheas-preparedfilmsareCuOwithmonocliniccrystallinestructure.HalleffectmeasurementresultsshowthatCuOfilmsarep-typeconduction.Adirectband-gapof~1.57eVfortheCuOfilmisdeducedfromUV-VisAbsorbancespectra.SolarcellsofCu/p-CuO/n-Si/AlstructureshowthatitsphotovoltaicbehaviorhasamuchwiderspectrumresponsewidthcomparedwiththatofSisolarcells.Inaddition,thephotocurrentofCuO/n-SijunctionisinvestigatedasafunctionofCuOfilmthickness,anditisfoundthatthecriticalthicknessforCuOonSiisabout250nm.