简介：Moleculardynamics(MD)simulationswereperformedtostretchtherectangulargraphenesheetsdopedwithsilicon,nitrogenorboronatoms.Young’smodulus,ultimatestress(strain)andenergyabsorptionweremeasuredforthegraphenesheetswiththedopingconcentration(DC)rangingfrom0to5%.Theemphasiswasplacedonthedistincteffectsofeachindividualdopantonthefundamentalmechanicalpropertiesofgraphene.TheresultsindicatedthatincorporatingthedopantsintographeneledtoanalmostlineardecreaseinYoung’smodulus.Monotonicreductionsinultimatestrength,ultimatestrainandenergyabsorptionwerealsoobserved.Suchdopingeffectswerefoundtobemostsignificantforsilicon,lesspronouncedforboron,andsmallornegligiblefornitrogen.Theoutputsprovideanimportantguidanceforthedevelopmentandoptimizationofnovelnanoscaledevices,andfacilitatethedevelopmentofgraphene-basedM/NEMS.

简介：LongtimebehaviorofdegenerateequationswiththenonlinearityofpolynomialgrowthofarbitraryorderonthewholespaceRNisconsidered.Byusing-trajectoriesmethods,weprovedthatweaksolutionsgeneratedbydegenerateequationspossessan(L2U(RN),L2loc(RN))-globalattractor.Moreover,theupperboundsoftheKolmogorovε-entropyforsuchglobalattractorarealsoobtained.

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简介：研究了vonNeumann代数A上的零点（m,n）-可导映射,证明了：对任意固定的非零整数m,n且（m＋n）（m-n）≠0,如果线性映射δ：A→A对任意满足AB=0的A,B∈A有mδ（AB）＋nδ（BA）=mδ（A）B＋mAδ（B）＋nδ（B）A＋nBδ（A）,则δ是导子.

简介：NanofluidswerepreparedbydispersingCunanoparticles(~20nm)inn-tetradecanebyatwo-stepmethod.Theeffectivethermalconductivitywasmeasuredforvariousnanoparticlevolumefractions(0.0001-0.02)andtemperatures(306.22-452.66K).TheexperimentaldatacompareswellwiththeJangandChoimodel.Thethermalconductivityenhancementwaslowerabove391.06Kthanforthatbetween306.22and360.77K.Theinterfacialthermalresistanceincreasedwithincreasingtemperature.Theeffectivethermalconductivityenhancementwasgreaterthanthatobtainedwithamoreviscousfluidasthebasemediaat452.66KbecauseofnanoconvectioninducedbynanoparticleBrownianmotionathightemperature.

简介：Arylhalidesareakindofextremelyvaluablecompoundsusedintransition-metal-catalyzedcouplingreactions,aswellasimportantstructuremotifsinmanynaturalproductsandmanufactureddrugs[1,2].Theclassicalapproachforpreparationofhaloarenesiselectrophilicaromaticsubstitution(EAS)usingvarioushalogenatingreagentsoroxidativehalogenationswithhalogenatingreagentgeneratedinsitufromhalidesandoxidants,suchasperoxide,oxygenandmeta-cholorperoxybenzoicacid(mCPBA)[3,4].However,harshreactionconditionsarerequiredforhalogenationoflessactivearomatics.orthoMetalationfollowedbyhalogenquenchingisanotherapproachforhalogenationofaromatics[5].However,thereareobviousdrawbacksforthesemethods,suchaslowregioselectivity,harshconditionsandevendangerousprocedures.Therefore,thedevelopmentofanalternativeandpracticalwayremainschallengeinorganicsynthesis.

简介：LetL=L0+VbethehigherorderSchrdigertypeoperatorwhereL0isahomogeneousellipticoperatoroforder2mindivergenceformwithboundedcoefficientsandVisarealmeasurablefunctionasmultiplicationoperator(e.g.,including(-?)m+V(m∈N)asspecialexamples).Inthispaper,assumethatVsatisfiesastronglysubcriticalformconditionassociatedwithL0,theauthorsattempttoestablishatheoryofHardyspaceHpL(Rn)(0

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简介：ThefirststarsintheearlyUniversewereformedabout400millionyearsafterthebigbang.VerificationoftheexistenceofthesestarsisimportantforourunderstandingoftheevolutionoftheUniverse[1].IthasbeenpredictedthatforPopulation-IIIstellarproductionyields,theabundancesofodd-Zelementsareremarkablydeficientcomparedtotheiradjacenteven-Zelements[2].Astronomersaresearchingforlong-lived,lowmassstarswiththeuniquenucleosyntheticpatternmatchingthepredictedyields[3].

简介：Anoveldiodestring-triggeredgated-PiNjunctiondevice,whichisfabricatedinastandard65-nmcomplementarymetal-oxidesemiconductor(CMOS)technology,isproposedinthispaper.Anembeddedgated-PiNjunctionstructureisemployedtoreducethediodestringleakagecurrentto13nA/μminatemperaturerangefrom25°Cto85°C.Toprovidetheeffectiveelectrostaticdischarge(ESD)protectioninmulti-voltagepowersupply,thetriggeringvoltageofthenoveldevicecanbeadjustedthroughredistributingparasiticresistanceinsteadofchangingthestackeddiodenumber.

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