简介：ThemicrostructureandopticalpropertiesofaburiedlayerformedbyO+(200keV,1.8×1018/cm2)andN+(180keV,4×1017/cm2)co-implantationandannealedat1200℃for2hhavebeeninvestigatedbyAugerelectron,IRabsorptionandreflectionspectroscopicmeasurements.TheresultsshowthattheburiedlayerconsistsofsilicondioxideandSiOx（x<2）andthenitrogensegregatestothewingsoftheburiedlayerwhereitformsanoxynitride.BydetailtheoreticalanalysisandcomputersimulationoftheIRreflectioninterferencespectrum,therefractiveindexprofilesoftheburiedlayerwereobtained.

简介：<正>日前,VishayIntertechnology,Inc.宣布,其E系列器件新增650V功率MOSFET。新的E系列器件采用VishaySiliconix超级结技术,导通电阻低至30mΩ、电流达6A～105A,在8种封装中实现低FOM和高功率密度。

简介：ByanalyzingthemainrecombinationmechanismsinGaInAsSbmaterials,thedependencesofthedarkcurrentdensityandopencircuitvoltageinn+-pGaInAsSbthermophotovoltaiccellsontherecombinationparameters,carrierconcentrationandcellthicknessarecalculated.Theresultsshowthatthedarkcurrentmainlycomesfromp-region,anditisrelatedwiththesurfaceandAugerrecombinationsinlowandhighcarrierconcentrationranges,respectively.ThesurfaceandAugerrecombinationscanbesuppressedbyreducingthesurfacerecombinationvelocityandcarrierconcentration,respectively.Thedarkcurrentdensitycanbesuppressedbyoptimizingmaterialparametersanddevicesurfacepassivationtechnique.SothehighopencircuitvoltagecanbeobtainedforGaInAsSbthermophotovoltaiccells.

简介：Comparedwithaccuratediagnosis,thesystem’sselfdiagnosingcapabilitycanbegreatlyincreasedthroughthet/kdiagnosisstrategyatmostkvertexestobemistakenlyidentifiedasfaultyunderthecomparisonmodel,wherekistypicallyasmallnumber.BasedonthePreparata,Metze,andChien(PMC)model,then-dimensionalhypercubenetworkisprovedtobet/kdiagnosable.Inthispaper,basedontheMaengandMalek(MM)?model,anovelt/k-faultdiagnosis(1k4)algorithmofndimensionalhypercube,calledt/k-MM?-DIAG,isproposedtoisolateallfaultyprocessorswithinthesetofnodes,amongwhichthenumberoffault-freenodesidentifiedwronglyasfaultyisatmostk.ThetimecomplexityinouralgorithmisonlyO(2nn2).

简介：AwedgeshapeSiLEDisdesignedandfabricatedwith0.35μmdouble-gratingstandardCMOStechnology.ThedevicestructureisbasedontheN-well-P+junction.TheP+hasawedgeshapeandissurroundedbytheN-well.ThemicrographsofSiLEDs'emittingandlayoutarecaptured.TheI-VcharacteristicandspectraoftheSiLEDaretested.Underroomtemperatureandbackwardbias,itsradiantluminosityis12nWat100mA,andthewavelengthoftheemittingpeakislocatedat764nm.

简介：<正>美国Kyma公司新推出高掺杂n+型氮化镓体单晶衬底,尺寸为10´10mm-2和18´18mm-2,同时他们也正在研发直径2英寸的氮化镓衬底,下一步是进入量产阶段。这次Kyma新研制的高掺杂n型氮化镓衬底的电阻率小

简介：Cupricoxide(CuO)isconsideredtobeapromisingmaterialforphotovoltaicapplications.Inthispaper,p-CuO/n-Sijunctionsolarcellswereobtainedbythermaloxidationofmetalliccopperfilmsdepositedonn-Sisubstratesat400℃for5h.X-raydiffractionpatternsshowthattheas-preparedfilmsareCuOwithmonocliniccrystallinestructure.HalleffectmeasurementresultsshowthatCuOfilmsarep-typeconduction.Adirectband-gapof~1.57eVfortheCuOfilmisdeducedfromUV-VisAbsorbancespectra.SolarcellsofCu/p-CuO/n-Si/AlstructureshowthatitsphotovoltaicbehaviorhasamuchwiderspectrumresponsewidthcomparedwiththatofSisolarcells.Inaddition,thephotocurrentofCuO/n-SijunctionisinvestigatedasafunctionofCuOfilmthickness,anditisfoundthatthecriticalthicknessforCuOonSiisabout250nm.

简介：Average(mean)voterisoneofthecommonestvotingmethodssuitablefordecisionmakinginhighly-availableandlong-missionsapplicationswheretheavailabilityandthespeedofthesystemarecritical.Inthispaper,anewgenerationofaveragevoterbasedonparallelalgorithmsandparallelrandomaccessmachine(PRAM)structureareproposed.Theanalysisshowsthatthisalgorithmisoptimalduetoitsimprovedtimecomplexity,speed-up,andefficiencyandisespeciallyappropriateforapplicationswherethesizeofinputspaceislarge.

简介：Y＆D7200N桌上型自动点／涂胶机，外形紧凑，坚固耐用，可与胶阀、针筒搭配使用，适用于任何点胶应用的自动化，极其适用于成本考量和紧凑空间要求时应用。采用行业领先的软件通过示教盒按步骤指导用户操作的指示，数分钟内可完成复杂的点胶操作程序编写。

简介：Thesteadyanddynamicpropertiesarecomparativelyinvestigatedforthen-dopedandnon-dopedInGaNLEDs.Thesimulatedresultsshowthatthen-dopedLEDexhibitsthesuperiorluminescenceandmodulationperformance,whichismainlyattributedtothehighercarrierradiativerateofn-dopedLED.Theresultscanexplainthereportedexperimentalresultsperfectly.

简介：基于陷阱的p-i-n的I-V特征紫外察觉者被介绍。它在不同温度被测量并且与变化分析了温度。设备的想象力因素在房间温度是2.09。最大的想象力因素在100点是2.14，它超过100衰退，并且最小的想象力因素在300点是1.26。前面的电压对温度的系数是有1个妈的前面的电流的-1.97mV/。基于两倍注射模型，在i区的深躺杂质激活精力是0.1343eV。

简介：<正>日前,VishayIntertechnology,Inc.宣布,推出新款8VN沟道Trench-FET功率MOSFET—SiA436DJ。该器件采用占位面积2mm×2mm的热增强型PowerPAK?SC-70封装,具有N沟道器件中最低的导通电阻。新的SiA436DJ在4.5V、2.5V、1.8V、1.5V和1.2V下具有9.4mΩ2、10·5mΩ、12.5mΩ、18mΩ和36mΩ的超低导通电阻。导通电阻数值比前一代方案最多低18%,比2mm×2mm占位面积的最接近的N沟道器件最多低64%。

简介：基于能效的考虑，当前生产的功率模块不仪对工作表现提出了更严格的要求，同时在封装密度方面也提出了新标准。对应的即使是表面上最细微的残留物，也会对这些极其敏感的应用中器件的稳定性产生不良影响。

简介：Afast-speedpulsedetectorbasedonn-typeSi-Schottkydiodemountedinthewaveguideisinvestigated.Therelationofthefast-speedpulsedetectorbetweenresponsetimeand3dBbandwidthisanalyzed.Byadoptingthetunablecircuit,thematchedbandwidthisachievedaswideaspossible.Experimentalresultsshowthatthepulseresponsetimeofthedetectorislessthan150pswithinrandomcarriersignal500MHzbandwidthrangebetween35GHzto39GHzviatuningcircuit.Thedetectorisveryeasytooperatebecauseitdoesnotneedbiascurrentorsynch-pulsesource.

简介：摘要通过提高DAAO的酶活来进一步提高本研究的多酶转化体系的转化效率。本章通过对来源于Rhodosporidiumtoruloides的DAAO（RtDAAO）的N-端进行研究，并通过一系列的改造和修饰，提高了RtDAAO在E.coli中的可溶性表达，同时又保证了宿主细胞的生长，以便于表达后重组菌的收集和多酶级联体系的制备。