简介:ThemicrostructureandopticalpropertiesofaburiedlayerformedbyO+(200keV,1.8×1018/cm2)andN+(180keV,4×1017/cm2)co-implantationandannealedat1200℃for2hhavebeeninvestigatedbyAugerelectron,IRabsorptionandreflectionspectroscopicmeasurements.TheresultsshowthattheburiedlayerconsistsofsilicondioxideandSiOx(x<2)andthenitrogensegregatestothewingsoftheburiedlayerwhereitformsanoxynitride.BydetailtheoreticalanalysisandcomputersimulationoftheIRreflectioninterferencespectrum,therefractiveindexprofilesoftheburiedlayerwereobtained.
简介:ByanalyzingthemainrecombinationmechanismsinGaInAsSbmaterials,thedependencesofthedarkcurrentdensityandopencircuitvoltageinn+-pGaInAsSbthermophotovoltaiccellsontherecombinationparameters,carrierconcentrationandcellthicknessarecalculated.Theresultsshowthatthedarkcurrentmainlycomesfromp-region,anditisrelatedwiththesurfaceandAugerrecombinationsinlowandhighcarrierconcentrationranges,respectively.ThesurfaceandAugerrecombinationscanbesuppressedbyreducingthesurfacerecombinationvelocityandcarrierconcentration,respectively.Thedarkcurrentdensitycanbesuppressedbyoptimizingmaterialparametersanddevicesurfacepassivationtechnique.SothehighopencircuitvoltagecanbeobtainedforGaInAsSbthermophotovoltaiccells.
简介:Comparedwithaccuratediagnosis,thesystem’sselfdiagnosingcapabilitycanbegreatlyincreasedthroughthet/kdiagnosisstrategyatmostkvertexestobemistakenlyidentifiedasfaultyunderthecomparisonmodel,wherekistypicallyasmallnumber.BasedonthePreparata,Metze,andChien(PMC)model,then-dimensionalhypercubenetworkisprovedtobet/kdiagnosable.Inthispaper,basedontheMaengandMalek(MM)?model,anovelt/k-faultdiagnosis(1k4)algorithmofndimensionalhypercube,calledt/k-MM?-DIAG,isproposedtoisolateallfaultyprocessorswithinthesetofnodes,amongwhichthenumberoffault-freenodesidentifiedwronglyasfaultyisatmostk.ThetimecomplexityinouralgorithmisonlyO(2nn2).
简介:AwedgeshapeSiLEDisdesignedandfabricatedwith0.35μmdouble-gratingstandardCMOStechnology.ThedevicestructureisbasedontheN-well-P+junction.TheP+hasawedgeshapeandissurroundedbytheN-well.ThemicrographsofSiLEDs'emittingandlayoutarecaptured.TheI-VcharacteristicandspectraoftheSiLEDaretested.Underroomtemperatureandbackwardbias,itsradiantluminosityis12nWat100mA,andthewavelengthoftheemittingpeakislocatedat764nm.
简介:Cupricoxide(CuO)isconsideredtobeapromisingmaterialforphotovoltaicapplications.Inthispaper,p-CuO/n-Sijunctionsolarcellswereobtainedbythermaloxidationofmetalliccopperfilmsdepositedonn-Sisubstratesat400℃for5h.X-raydiffractionpatternsshowthattheas-preparedfilmsareCuOwithmonocliniccrystallinestructure.HalleffectmeasurementresultsshowthatCuOfilmsarep-typeconduction.Adirectband-gapof~1.57eVfortheCuOfilmisdeducedfromUV-VisAbsorbancespectra.SolarcellsofCu/p-CuO/n-Si/AlstructureshowthatitsphotovoltaicbehaviorhasamuchwiderspectrumresponsewidthcomparedwiththatofSisolarcells.Inaddition,thephotocurrentofCuO/n-SijunctionisinvestigatedasafunctionofCuOfilmthickness,anditisfoundthatthecriticalthicknessforCuOonSiisabout250nm.
简介:Average(mean)voterisoneofthecommonestvotingmethodssuitablefordecisionmakinginhighly-availableandlong-missionsapplicationswheretheavailabilityandthespeedofthesystemarecritical.Inthispaper,anewgenerationofaveragevoterbasedonparallelalgorithmsandparallelrandomaccessmachine(PRAM)structureareproposed.Theanalysisshowsthatthisalgorithmisoptimalduetoitsimprovedtimecomplexity,speed-up,andefficiencyandisespeciallyappropriateforapplicationswherethesizeofinputspaceislarge.