简介：ＭｅａｓｕｒｅｍｅｎｔｏｆＭｏｉｓｔｕｒｅＩｎｓｉｄｅｔｈｅＨｅｒｍｅｔｉｃＰａｃｋａｇｅｏｆＳｅｍｉｃｏｎｄｕｃｔｏｒＤｅｖｉｃｅ①ＸＩＥＸｕｑｉａｎｇ（ＹａｎｓｈａｎＵｎｉｖｅｒｓｉｔｙ，Ｑｉｎｈｕａｎｇｄａｏ０６６００４，ＣＨＮ）ＹＵＴｉｅｙａ...

简介：Forthelargenumberofnonlineardegradationdevicesexistinginaproject,theexistingmethodshavenotsystematicallystudiedtheeffectsofrandomeffectontheremaininglifetime(RL),theaccuracyandefficiencyoftheparametersestimationarenothigh,andthecurrentdegradationstateofthetargetdeviceisnotaccuratelyestimated.Inthispaper,anonlinearWienerdegradationmodelwithrandomeffectisproposedandthecorrespondingprobabilitydensityfunction(PDF)ofthefirsthittingtime(FHT)isdeduced.Aparameterestimationmethodbasedonmodifiedexpectationmaximum(EM)algorithmisproposedtoobtaintheestimatedvalueoffixedcoefficientandthepriorivalueofrandomcoefficientinthemodel.Theposteriorvalueoftherandomcoefficientandthecurrentdegradationstateoftargetdeviceareupdatedsynchronouslybythestatespacemodel(SSM)andtheKalmanfilteralgorithm.ThePDFofRLwithrandomeffectisdeduced.AsimulationexampleisanalyzedtoverifythattheproposedmethodhastheobviousadvantageovertheexistingmethodsinparameterestimationerrorandRLpredictionaccuracy.

简介：Superlatticesconsistingofalternatinglayersoforganic/polymericmaterialshavebeenfabricatedfromtris(8-hydroxyquinoline)aluminum(Alq3)andpoly(N-vinylcarbazole)(PVK)byamultisource-typehigh-vacuumorganicmoleculardeposition.ThecharacteristicsofsuperlatticestructuresaredeterminedbythesmallangleX-raydiffraction,opticaladsorptionandphotoluminescence.Theelectroluminescentdeviceswiththesuperlatticestructurehavealsobeenfabricatedandtheemissioncharacteristicsarediscussed.

简介：接口特征在薄电影设备的性能上拥有很重要的影响。ITO/PTCDA/p-Si薄电影设备与真空蒸发和噼啪声免职方法被建立。ITO/PTCDA/p-Si的表面和接口电子国家被X光检查光电子光谱学(XPS)和氩离子横梁调查蚀刻技术。结果在ITO/PTCDA/p-Si，不是仅仅ITO/PTCDA-Si的接口显示那而且PDCDA-Si能生产散开。而且，每个原子的XPS系列显得化学移动，和Ols和Ols的化学移动是更显著的。CLC数字O484文件代码A工程被中国的国家自然科学基础支持(不同意60076023)

简介：Throughexperimentsandcomputersimulation,theinfluenceoftheenergylevelsoforganicmaterialsandelectrodematerialsintheorganiclight-emittingdiodes(OLEDs)onthedeviceperformancesisdiscussed.Resultsshowthatthedeviceperformancesareinfluencedbynotonlythecarrierinjectionbarriersattheelectrodeinterfacebutalsothebarriersattheorganicheterojunctioninterface.ThisresultishelpfultotheselectionoftheorganicmaterialsandtheirarrangementintheoptimaldesignofOLEDs.

简介：Anonlinearitymeasurementofthecharge-coupleddevice(CCD)arrayspectrometerusingfluxadditionandcomparisonmethodisdescribed.Thelightwithvariouscolorsfromthecolorfullightemittingdiode(LED)lightsourceisappliedtomeasurethenonlinearityofthespectrometeratdifferentwavelengths,respectively.Anhigh-endCCDarrayspectrometeristested.ForcolorfulLEDlightsources,thenonlinearityfactorsoftheCCDarrayspectrometer(absolutevalue)areasfollows:k<0.8%forwhitelight,k<1.1%forredlight,k<2.2%forgreenlightandk<4.7%forbluelight.Byusingthosequasi-monochromaticlightsources,itisshownthatthenonlinearitydependsonthewavelength.Itisimportanttobewarinessaboutthespectralnonlinearityandrelateduncertaintyevaluationwhenthenarrow-bandlightsourceistested.

简介：一个便携式的双隧道的digital/analogue混血儿占据放大器(LIA)被开发，并且当signal-to-noise比率(SNR)比12dB大时，它的振幅察觉错误是不到10%。然后，微分中间红外线的甲烷(CH4)察觉设备试验性地基于宽带白热电线来源和多传递被表明球形的反射镜。实验被执行获得设备的察觉到的表演。与仅仅4.8厘米的吸收长度，察觉(LoD)的限制是大约71.43mg/m3,，察觉范围从0mg/m3是到5.00vacancies，并且传导性是小极化子的跳跃描述的井：=0exp{29/kT}(欧姆厘米)有2m0的一个有效的团的1。thermo力量是否定的并且与温度改变很少，建议传导机制主要由于电子跳跃。分析材料在一个宽广pH范围上显示出化学稳定性；在KOH解决方案显示器的半对数的阴谋27一厘米2的交换电流密度和0.204VSCE。电容测量(C2V)展出线性行为，n类型电导率特征，从哪个0.530VSCE

简介：AnewschemebasedonSOA-MZIforall-optical2Rregenerationisproposed.Thecharacteristicsofgainandswitchingwindowofthisdeviceareinvestigatedindetail.Numericalsimulationresultsindicatethatthenonlineargaincompression,thetimedelaybetweentheinputopticalsignalandthewidthoftheopticalpulseareessentialparametersforagoodperformanceofall-optical2Rregeneration.

简介：Aterahertz（THz）polarizerandswitchstructureisproposedbasedonthephasetransitionofvanadiumdioxide（VO2）.WhenVO2isintheinsulationphase,theresonancefrequenciesoftheproposedstructureare1.49THzand1.22THzforthex-andy-polarization,respectively.ItcanperformasaTHzpolarizerwithextinctionratiosof52.5dBand17dBforthey-andx-polarization,respectively;WhenVO2transformsintometallicphase,theresonancefrequencyforx-polarizationwaveshiftsfrom1.49THzto1.22THz,whilethatremainsstillforthey-polarizationcomponent.Itmeansthatthestructurecanworkasapolarization-dependentTHzswitchwithahighextinctionratioof32dB.

简介：AnewSOI(SiliconOnInsulator)highvoltagedevicewithStepUnmovableSurfaceCharges(SUSC)ofburiedoxidelayeranditsanalyticalbreakdownmodelareproposedinthepaper.Theunmovablechargesareimplementedintotheuppersurfaceofburiedoxidelayertoincreasetheverticalelectricfieldanduniformthelateralone.The2-DPoisson'sequationissolvedtodemonstratethemodulationeffectoftheimmobileinterfacechargesandanalyzetheelectricfieldandbreakdownvoltagewiththevariousgeometricparametersandstepnumbers.AnewRESURF(REduceSURfaceField)conditionoftheSOIdeviceconsideringtheinterfacechargesandburiedoxideisderivedtomaximizebreakdownvoltage.Theanalyticalresultsareingoodagreementwiththenumericalanalysisobtainedbythe2-DsemiconductordevicessimulatorMEDICI.Asaresult,an1200Vbreakdownvoltageisfirstlyobtainedin3μm-thicktopSilayer,2μm-thickburiedoxidelayerand70μum-lengthdriftregionusingalineardopingprofileofunmovableburiedoxidecharges.