简介:Fe_(3–x)O_4raspberryshapednanostructures/graphenenanocompositesweresynthesizedbyaone-steppolyol-solvothermalmethodtobetestedaselectrodematerialsforLi-ionbattery(LIB).Indeed,Fe_(3–x)O_4raspberryshapednanostructuresconsistoforiginalorientedaggregatesofFe_(3–x)O_4magnetitenanocrystals,ensuringalowoxidationstateofmagnetiteandahollowandporousstructure,whichhasbeeneasilycombinedwithgraphenesheets.TheresultingnanocompositepowderdisplaysaveryhomogeneousspatialdistributionofFe_(3–x)O_4nanostructuresatthesurfaceofthegraphenesheets.TheseoriginalnanostructuresandtheirstronginteractionwiththegraphenesheetsresultedinverysmallcapacityfadinguponLi+ionintercalation.Reversiblecapacity,ashighas660mAh/g,makesthismaterialpromisingforanodeinLi-ionbatteriesapplication.
简介:与黄金和氧化铁nanoparticles并且与silibinin装载的PEGylated-PLGA随机的nanofibrous膜被electrospinning免职准备。nanofibrous膜能遥远地被控制并且由一盏激光灯或磁场激活在需求上释放生物代理人。nanosystems用扫描电子显微镜学被描绘,红外线的光谱学,原子磁性的回声光谱学,和thermogravimetric分析的Fourier变换。装载效率和药内容百分比的药被紫外力的光吸收光谱学决定。nanofibrous膜由相对低紧张的激光照耀或由一个磁场刺激了为至少60h显示出持续silibinin版本,没有爆炸效果。建议便宜electrospinning过程能够集合,经由一个一步舞过程,有外部地为控制的药交货要激活的金属性的nanoparticles的刺激应答的装载药的nanosystem。
简介:用Co2(CO)8与CH3CSNH2反应制得产物Ⅰ,又用Na2Fe(CO)4与Ⅰ反应制得产物Ⅱ(Ⅰ:Co3(μ3-S)(CO)7(CH3CSNH),Ⅱ:Co2Fe(μ3-S)(CO)7(CH3CSNH).通过元素分析。IR、UV、1HNMR、MS表征并用X射线衍射法测得Ⅱ的单晶结构.该簇合物属三斜晶系、PT空间群,晶胞参数:a=0.9203(1),b=1.1296(2),c=1.1425(2)nm;α=116.40°(2),β=101.92°(2),γ=92.58°(1);z=2,V=1.2162nm3,Dc=1.698cm3,μ=21.89cm-1.结构分析表明,Co2FeS构三角锥分子骨架,所有CO均为端基配体,S1为面桥基配体,CH3CSNH为双齿配体,与Co、Fe形成五元环结构.
简介:Toimprovetheinitialcoulombicefficiencyandbulkdensityoforderedmesoporouscarbons,activeFe2O3nanoparticleswereintroducedintotubularmesoporechannelsofCMK-5carbon,whichpossesseshighspecificsurfacearea(>1700m2g-1)andlargeporevolume(>1.8cm3g-1).FineFe2O3nanoparticleswithsizesintherangeof57nmwerehighlyandhomogenouslyencapsulatedintoCMK-5matrixthroughammonia-treatmentandsubsequentpyrolysismethod.TheFe2O3loadingwascarefullytailoredanddesignedtowarrantahighFe2O3contentandadequatebufferspaceforimprovingtheelectrochemicalperformance.Inparticular,suchFe2O3andmesoporouscarboncompositewith47wt%loadingexhibitsaconsiderablystablecycleperformance(683mAhg-1after100cycles,99%capacityretentionagainstthatofthesecondcycle)aswellasgoodratecapability.Thefabricationstrategycaneffectivelysolvethedrawbackofsinglematerial,andachieveahigh-performancelithiumelectrodematerial.
简介:WhileFe-basedoxygencarriers(OC)areregardedtobepromisingforchemicalloopingcombustion(CLC),thedecreaseofCO2selectivityduringdeepreductionprocessandthesevereagglomerationofFe2O3oftenoccuraftermultipleredoxcyclesduetothelowoxygenmobility.Herein,Fe-substitutedBahexaaluminates(BaFexAl12–xO19,denotedasBFxA-H,x=1and2)preparedbyamodifiedtwo-stepmethodexhibitednotonlyhigheramountofconvertedoxygen(Ot)andCH4conversion(77%and81%vs.17%and75%)thanthosepreparedbythetraditionalco-precipitationmethod(BFxA-C,x=1and2)butalsohighCO2selectivityabove92%duringthenearlywholereductionfromFe3+toFe2+.Furthermore,theBFxA-Hexhibitedtheexcellentrecyclabilityduring50cycles.ThebetterperformancewasascribedtothemarkedlyenhancedoxygenmobilitywhichresultedfromdominantoccupancyofFecationsinAl(5)sites(Fe5:71%and70%vs.49%and41%)inmirrorplanesofhexaaluminateleadingtolargeramountoflatticeoxygencoordinatedwithFe5(O–Fe5)(0.45and0.85mmol/gvs.0.31and0.50mmol/g).TheimprovementofoxygenmobilityalsofavoredthepreservationofchemicalstateofFecationsinhexaaluminatestructureinthere-oxidationstep,resultingintheexcellentrecyclabilityofBFxA-H.
简介:Inthiswork,theinfluenceofCO2onthestructuralvariationandcatalyticperformanceofNa2WO4/Mn/SiO2foroxidativecouplingofmethanetoethylenewasinvestigated.ThecatalystwaspreparedbyimpregnationmethodandcharacterizedbyXRD,RamanandXPStechniques.AppropriateamountofCO2inthereactantgasesenhancedtheformationofsurfacetetrahedralNa2WO4speciesandpromotedthemigrationofOinMOx,Na,Wfromthecatalystbulktosurface,whichwerefavorableforoxidativecouplingofmethane.WhenthemolarratioofCH4/O2/CO2was3/1/2,enrichedsurfacetetrahedralNa2WO4speciesandhighsurfaceconcentrationofOinMOx,Na,Wweredetected,andthenhighCH4conversionof33.1%andhighC2H4selectivityof56.2%wereobtained.WithfurtherincreaseofCO2inthereagentgases,thecontentofactivesurfacetetrahedralNa2WO4speciesandsurfaceconcentrationofOinMOx,Na,Wdecreased,whilethatofinactivespecies(MnWO4andMn2O3)increaseddramatically,leadingtolowCH4conversionandlowC2H4selectivity.ItcouldbespeculatedthatNa2WO4crystalwastransformedintoMnWO4crystalwithexcessiveCO2addedunderthereactionconditions.PretreatmentofNa2WO4/Mn/SiO2catalystbymoderateamountofCO2beforeOCMalsopromotedtheformationofNa2WO4species.
简介:Inthepresentwork,aninterconnectedsandwichcarbon/Si-SiO2/carbonnanospherescompositewaspreparedbytemplatemethodandcarbonthermalvapordeposition(TVD).ThecarbonconductivelayercannotonlyefficientlyimprovetheelectronicconductivityofSi-basedanode,butalsoplayakeyroleinalleviatingthenegativeeffectfromhugevolumeexpansionoverdischarge/chargeofSi-basedanode.Theresultingmaterialdeliveredareversiblecapacityof1094mAh/g,andexhibitedexcellentcyclingstability.Itkeptareversiblecapacityof1050mAh/gover200cycleswithacapacityretentionof96%.
简介:做Si的Ge(2)sb(2)Te(5)电影被dc劈啪作响magnetronco与Ge2Sb2Te5和Si目标准备了。在在两结晶化温度和阶段转变温度fromface-centred-cubic(fcc)的增加的Te(5)电影结果分阶段执行到的Ge(2)sb(2)的Si的增加六角形(十六进制)阶段。Ge2Sb2Te5电影的抵抗力显示出重要增加,Si做。当在这部电影做Si的11.8at.%时,在退火的460度C以后的抵抗力与undopedGe2Sb2Te5电影相比从64~99终止从1~11m终止(.)厘米和动态抵抗增加增加。这对写阶段变化随机存取记忆的当前的减小很有用。
简介:Higher-κdielectricLaLuO_3,depositedbymolecularbeamdeposition,withTiNasgatestackisintegratedintohigh-mobilitySi/SiGe/SOIquantum-wellp-typemetal-oxide-semiconductorfieldeffecttransistors.Thresholdvoltageshiftandcapacitanceequivalentthicknessshrinkareobserved,resultingfromoxygenscavengingeffectinLaLuO_3withTi-richTiNafterhightemperatureannealing.Themechanismofoxygenscavenginganditspotentialforresistivememoryapplicationsareanalyzedanddiscussed.
简介:Si-richsiliconnitridefilmsarepreparedbyplasma-enhancedchemicalvapordepositionmethod,followedbythermalannealingtoformtheSinanocrystals(Si-NCs)embeddedinSiNxfloatinggateMOSstructures.Thecapacitance–voltage(C–V),current–voltage(I–V),andadmittance–voltage(G–V)measurementsareusedtoinvestigatethechargingcharacteristics.Itisfoundthatthemaximumflatbandvoltageshift(△VFB)duetofullchargedholes(~6.2V)ismuchlargerthanthatduetofullchargedelectrons(~1V).ThechargingdisplacementcurrentpeaksofelectronsandholescanbealsoobservedbytheI–Vmeasurements,respectively.FromtheG–VmeasurementswefindthattheholeinjectionisinfluencedbytheoxideholetrapswhicharelocatedneartheSiO2/Si-substrateinterface.CombiningtheresultsofC–VandG–Vmeasurements,wefindthattheholechargingoftheSi-NCsoccursviaatwo-steptunnelingmechanism.TheevolutionofG–VpeakoriginatedfromoxidetrapsexhibitstheprocessofholeinjectionintothesedefectsandtransferringtotheSi-NCs.
简介:AmassofGaNnanowireshasbeensuccessfullysynthesizedonSi(111)substratesbymagnetronsputteringthroughammoniatingGa2O3/Cofilmsat950C.X-raydiffraction,scanningelectronmicroscopy,highresolutiontransmissionelectronmicroscopeandFouriertransformedinfraredspectraareusedtocharacterizethesamples.Theresultsdemonstratethatthenanowiresareofsingle-crystalGaNwithahexagonalwurtzitestructureandpossessrelativelysmoothsurfaces.ThegrowthmechanismofGaNnanowiresisalsodiscussed.更多还原