简介:
简介:目的编制普通话版的噪声下言语识别速测表(QuickSpeech-In-Noise,QuickSIN)并进行等价性筛选。方法从嘈杂语噪声下的普通话儿童短句库中抽取90个句子组成15张噪声下旬表。每张表6句话,每句包含5个关键词,表中各句的信噪比依次为+15,+10,+5,0,-5,-10dB。选择15名18~25岁听力正常人为受试者,每位受试者依次测试15张表,计算各自的信噪比损失。对15张句表的信噪比损失进行单因素方差分析,并使用TukeyHSD检验进行表间两两比较和等价性分析。结果15名受试者的信噪比损失为(0.84±1.77)dB。经统计学分析,15张句表中有12张表相互等价,表5、8、14不等价。单侧80%医学参考值范围是小于+2.32dB,95%医学参考值范围是小于+3。74dB。结论普通话版的OuickSIN为临床提供了一种简单、快捷地评价患者在噪声下言语识别能力的测听方法,并为助听装置的选配提供了客观依据。
简介:Si-richsiliconnitridefilmsarepreparedbyplasma-enhancedchemicalvapordepositionmethod,followedbythermalannealingtoformtheSinanocrystals(Si-NCs)embeddedinSiNxfloatinggateMOSstructures.Thecapacitance–voltage(C–V),current–voltage(I–V),andadmittance–voltage(G–V)measurementsareusedtoinvestigatethechargingcharacteristics.Itisfoundthatthemaximumflatbandvoltageshift(△VFB)duetofullchargedholes(~6.2V)ismuchlargerthanthatduetofullchargedelectrons(~1V).ThechargingdisplacementcurrentpeaksofelectronsandholescanbealsoobservedbytheI–Vmeasurements,respectively.FromtheG–VmeasurementswefindthattheholeinjectionisinfluencedbytheoxideholetrapswhicharelocatedneartheSiO2/Si-substrateinterface.CombiningtheresultsofC–VandG–Vmeasurements,wefindthattheholechargingoftheSi-NCsoccursviaatwo-steptunnelingmechanism.TheevolutionofG–VpeakoriginatedfromoxidetrapsexhibitstheprocessofholeinjectionintothesedefectsandtransferringtotheSi-NCs.