简介：利用SOI衬底生长部分／完全耗尽结构的晶体管或用应变沟道提高器件性能可制备出高性能CMOS逻辑器件；这两种方法均可用于CMOS结构，也可单独用于提高器件性能。将应变用于器件沟道，可将沟道迁移率提高50％，从而提高了器件电流。SOI晶体管的好

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简介：Intrinsiccarrierconcentration（ni）isoneofthemostimportantphysicalparametersforunderstandingthephysicsofstrainedSiandSi1-xGexmaterialsaswellasforevaluatingtheelectricalpropertiesofSi-basedstraineddevices.Uptonow,thereportonquantitativeresultsofintrinsiccarrierconcentrationinstrainedSiandSi1-xGexmaterialshasbeenstilllacking.Inthispaper,byanalyzingthebandstructureofstrainedSiandSi1-xGexmaterials,boththeeffectivedensitiesofthestatenearthetopofvalencebandandthebottomofconductionband（NcandNv）at218,330and393KandtheintrinsiccarrierconcentrationrelatedtoGefraction（x）at300KweresystematicallystudiedwithintheframeworkofKPtheoryandsemiconductorphysics.ItisfoundthattheintrinsiccarrierconcentrationinstrainedSi（001）andSi1-xGex（001）and（101）materialsat300KincreasessignificantlywithincreasingGefraction（x）,whichprovidesvaluablereferencestounderstandtheSibasedstraineddevicephysicsanddesign.

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简介：Si_3N_4-Si_2N_2Ocomposites被液相sintering(LPS)与非结晶的缩放nano的氮化矽粉末制作。Si_2N_2O阶段被in-situreaction2Si_3N_4(s)+1.5O_2(g)=3Si_2N_2O+N_2(g)产生直到在体积的60percent的Si_2N_2O阶段的内容在1650t的sintering温度被获得并且当sintering温度增加了或减少时，减少了，显示反应是可逆的。集体损失，相对密度和平均谷物尺寸与增加sintering温度增加了。当sintering温度在1700degC下面时，Theaverage谷物尺寸是不到500nm。Thesintering过程包含复杂结晶化和阶段转变：非结晶的氮化矽->equiaxialalpha-Si_3N_4->equiaxial->Si_3N_4->杆--相似Si_2N_2O->像针的beta-Si_3N_4。小回合--塑造的beta-Si_3N_4粒子在Si_2N_2O谷物被骗诱，界定差错的高密度位于在1650degC的sintering温度的Si_2N_2O谷物的中间。坚韧在1600degCto7.2MPa从3.5Mpa中心点m~(1/2)增加了在1800degC的中心点m~(1/2)。坚硬在1600degC象21.5GPa(Vickers)一样高。

简介：Defectsofpolymer-derivedSi-C-OfiberswereintensivelystudiedbytheSEMandTEMtechniquesandtheiroriginationswerealsodiscussedonthebasisoffactorsexperiments.Thedefectswerefoundmainlyintheformofstrumaes,pitsandsplitsonsurfacesaswellasmicroflawnetworks,porosityclustersandinclusionsinthebulk.Factorsexperimentsrevealthatanonuniformoraninsufficientcuringwouldresultinlarger-sizedstru-maesorinteriormicroflaws.Gasevolutionratesduetodifferentfiringrateshaveagreatinfluenceontheformationofinternalmicrofiawsorporosityclustersandsomeoxidation-inducedpitsorsplitsmaybeformedonsurfacesbe-causeoratraceofoxygenorwatervaporaccumulatedfromtheflowinginertatmosphereduringpyrolysis.

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简介：Si3N4/TiCnanocompositeceramicshavebeenfabricatedbyhotpressingtechniquewithAl2O3andY2O3asadditives.TheresultsshowedthatwelldispersedcompositepowderwascarriedoutbyaddingdispersantandadjustingpHvaluesofsuspensions.RemarkableincreaseinflexuralstrengthatroomtemperatureswasobtainedbyaddingnanoparticlesinSi3N4matrixwith10%(wtpct)ofnano-Si3N4and15%ofnano-TiC.Theflexuralstrength,fracturetoughnessandhardnesswere1025MPa,7.5MPa·1/2and15.6GPa,respectively.Themicrostructuresofmaterialswereanalyzedbyscanningelectronmicroscopy(SEM)andtransmissionelectronmicroscopy(TEM),whichindicatedthatTiCnanoparticlesdistributeinthematrixandatthegrainboundaries.Accordingtothefractureform,lowcontentsofnanoparticlescouldrefinematrixgrainsandleadtothecrackdeflectionaswellascrackpinning.Themultiplexmicrostructurewasformedbymixingnano-Si3N4particles.Thecracktrajectoriesexhibitedcrackdeflection,rod-likegrainbridgingandpull-out.

简介：介绍了Fe3Si的一些基本特性及Fe3Si薄膜的几种主要制备方法,重点介绍了分子束外延法中不同类型衬底、温度对Fe3Si薄膜形成的影响,并且分析了各种制备方法中的一些重要参数对薄膜结构及性质的影响。随着Fe3Si薄膜制备工艺的不断完善,Fe3Si薄膜将会成为一种性能优秀的自旋电子器件。

简介：用等离子体增强化学气相沉积（PECVD）方法，在接近常压状态下，在氩气（Ar）和氢气（H2）的气氛中，以硅烷为源气体，在沉积区域加载脉冲负偏压对沉积过程进行调节，在基片上沉积得到具有荧光特性的含有Si纳米晶颗粒的SiOx薄膜，并在原气氛（Ar＋H2）中进行退火处理，SEM、TEM、FTIR、PL显示，退火后薄膜的网格结构被破坏，颗粒性更加明显，化学成分中Si—H减少，Si-O-Si增加，同时有少量si纳米晶粒析出，退火后的薄膜发光峰出现大幅蓝移，发光基团趋于单一，这与Si纳米晶粒的出现相对应。

简介：有关于30-50nm的谷物尺寸的nanocrystallineMg2Si(n-Mg2Si)的Densification行为被hot-pressing在显示的400°C.The结果调查n-Mg2Si的那个thedensification过程展出了三线性segments:p<0.3GPa，0.3GPa1.2GPa由Heckel决定了公式，在哪个之中在高压力范围p>1.2GPa的第三个快增加片断很少在常规纹理粗糙的polycrystallinematerials.Nevertheless被报导了，在调查的整个压力范围(0.125-1.500GPa)，n-Mg2Si的densificationbehavior能是Kawakita公式p/C=(1/a)描述的井有在对协议的起始的孔的好同意的constanta=0.452的p+1/(ab)。

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简介：La9.33Si6O26氧离子导体被稳固的州的reactionmethod.Its综合结构被单个水晶的X光检查衍射分析在结果显示出的roomtemperature.The决定那La9.33Si6O26氧化物让磷灰石组织，空间groupP6_3/m.AC阻抗大小显示了在氮的氧化物sintered在空中比那些sintered有高得多的电导率。传导性上的谷物边界的效果被讨论。

简介：TheagingbehaviorsofirradiatedtungstenbyhighenergySi3＋andH＋ionsaremainlyinvestigatedusinginternalfriction（IF）methodcombinedwithSEMtechnology.TheSEManalysisindicatesthatmoresevereirradiationdamageappearsinthesurfaceofsimultaneousdualSi3＋H＋irradiatedspecimenthanthatinthesequentialdualSi3＋H＋irradiatedspecimenorthesingleSi3＋irradiatedspecimensbecauseofthesynergisticeffectofSiandHirradiation.TheIFbackgroundoftheirradiatedsampleisaboutoneorderofmagnitudehigherthanthatoftheunirradiatedsampleowingtotheexistenceofhighdensityfreshdislocationsinducedbySi/Hirradiation,InthesequentialdualSi3＋andH＋irradiatedspecimen,thehydrogenSnoek-Ke-Koster（SKK）peakassociatedwiththemovementofdislocationsdragginghydrogenatomsisobservedanditsheightdecreaseswithagingtimeatroomtemperature.AsforthesimultaneousdualSi3＋H＋irradiatedspecimen,however,thereisnosuchhydrogenSKKpeak.Thereasoncanbeexplainedashydrogendiffusionandpinningeffectofdislocations.

简介：Al-inducedlateralcrystallizationofamorphoussiliconthinfilmsbymicrowaveannealingisinvestigated.ThecrystallizedSifilmsareexaminedbyopticalmicroscopy,Ramanspectroscopy,transmissionelectronmicroscopyandtransmissionelectrondiffractionmicrography.Aftermicrowaveannealingat480℃for50min,theamorphousSiiscompletelycrystallizedwithlargegrainsofmain(111)orientation.Therateoflateralcrystallizationis0.04μm/min.Thisprocess,labeledMILC-MA,notonlylowersthetemperaturebutalsoreducesthetimeofcrystallization.ThecrystallizationmechanismduringmicrowaveannealingandtheelectricalpropertiesofpolycrystallineSithinfilmsareanalyzed.ThisMILC-MAprocesshaspotentialapplicationsinlargeareaelectronics.

简介：TheX-raydiffractionpeak-shiftmethodwasintroducedintothedeterminationofdeformationfaultprobability(α)ofFe-Mn-SialloyswithvariousMncontentsandthermomechanicalcyclingnumbers.Thepreciselatticeconstantsrequiredwereobtainedbynumericalcalculationinsteadofusingstandardsamplewithoutanyfault.Theinfluenceofinternalstressonthedeterminedαhasbeenevaluated,andthecausedrelativeerrorwasdeterminedasabout4%andthusnegligible.TheresultsshowthatthedeformationfaultprobabilityincreaseswithdecreasingMn-contentandincreasingcyclenumber,whicharequalitativelyconsistentwiththoseresultsofPsfdeterminedbypeak-broadeningmethod.

简介：AhypereutecticAl-Sialloypowderwaspreparedbyultrasonicgasatomizationprocess.Themorphologies,microstructureandphaseconstituentofthealloypowderwerestudied.TheresultsshowedthatpowderofthealloywasveryfineanditsrnicrostructurewasmainlyconsistedofSicrystalsplusintermetalliccompoundAl9FeSi3,whichwere.veryfineanduniformlydistributed.