简介:Ananalysisisgiventoexplaintheinstabilityofthehighconductivitypropertyofnc-Si:Hfabricated.Detaileddiscussioniscarriedoutconcentratingontheconductivityandgrowthmechanism.Itisassumedthattheinstabilityoftheconductivityofthenc-Si:Hstemsfromtwopart:thephasetransitionfromnanocrystallitesintoa-Si:H,andtheoxygenincorporationofthethinlayerofthefilm,whichcontributesmoretotheeffectwhenthefilmsufferstheexposuretoair.Thetheoryisinagreementwiththeexperimentandmeasurement.
简介:Polymerethyleneoxide(PEO)functionalfilmscanbeusedasamaterialforbiocompatibleresearch.Inthispaper,weinvestigatedthestructuresofPEO-likefilmspolymerizedonSisurfacewithdiethlyeneglycoledimethylether(DEGDME)astheprecursorandArasthedilutiongasbyplasmaenhancedchemicalvapordeposition(PECVD).Andthepulseplasmamodelwasemployedtopolymerizethefunctionalfilms.ThechemicalstructureofthecoatingswasinvestigatedbyFouriertransforminference(FTIR)andX-rayphotoelectronspectroscopy(XPS).TheresultsindicatethatPEO-likestructurefilmscanbepolymerizedbyDEGDME/Arplasma.TheconcentrationofC-Ofunctionalgroupspolymerizedinthelohgplasma-offtimewasmuchhigherthanthatintheshortplasma-offtime.Withthesamedischargeparameters,moreover,theC-Oratioinpolymersincreasedwithahigherinjectedpower.
简介:AseriesofsamplesdepositedbyVHF-PECVDatdifferentpressureswerestudied.Themeasurementresultsofphotosensitivity(photoconductivity/darkconductivity)andactivationenergyindicatednearthesamerulewiththechangeofthepressure.TheresultsmeasuredbyRamanscatteringspectra,X-raydiffractionandFTIRallprovedtheevidentcrystallizationofthematerials.Treatingthep/iinterfacebyhydrogenhasagreatimprovingeffectontheperformanceofthemicrocrystallinesilicon(μc-Si)p-i-nsolarcellsifthetreatmenttimewasappropriate.Anefficiencyof4.24%forμc-Sip-i-nsolarcellsdepositedbyVHF-PECVDwasfirstlyobtained.
简介:摘要:受盐雾、潮湿和水分等环境影响电子产品在使用过程中易产生故障,迫切需要制备防护膜提高其可靠性。本文中采用等离子增强化学气相沉积法(PECVD)以六甲基环三硅氧烷为单体沉积过渡层,再分别沉积二丙烯酸二乙二醇酯和2-(全氟癸基)乙基甲基丙烯酸酯在过渡层上形成纳米复合防护膜层。并研究了放电功率、沉积时间、单体流量、氦气流量、缓蚀剂等对复合膜的性能影响。
简介:Inthispaper,polycrystallinesiliconfilmsweredepositedbyelectroncyclotronresonanceplasma-enhancedchemicalvapordeposition(ECR-PECVD)usingSiH_4/ArandSiH_4/H_2gaseousmixture.EffectsofargonflowrateonthedepositionefficiencyandthefilmpropertywereinvestigatedbycomparingwithH_2.TheresultsindicatedthatthedepositionrateofusingArasdischargegaswas1.5-2timeshigherthanthatofusingH_2,whilethepreferredorientationsandthegrainsizesofthefilmswereanalogous.FilmcrystallinityincreasedwiththeincreaseofArflowrate.OptimizedflowratioofSiH_4toArwasobtainedasF(SiH_4):F(Ar)=10:70forthehighestdepositionrate.
简介:研究表明含氟气体的性质决定了原子氟(F)的转化效率,通常在CxFy气体中x的值越大,氟(F)的转化效率也就会越高。所以C3F8(八氟丙烷)比C2F6(乙氟烷)具有更高的利用效率,更少的PFC(全氟化物)的排放。文章主要研究在以四乙氧基硅烷(TOES)为基础的离子增强化学气相沉积(PlasmaEnhancedChemicalVaporDeposition,PECVD)的清洗制程中,利用分解效率高的C3F8气体取代C2F6气体。通过实验设计(DesignOfExperiment,DOE),调整腔体压力、射频(RF)功率、气体流量等参数,最终得到最优化的新清洗配方。应用到实际的量产中,有效地降低了成本,减少了PFC的排放。
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